KERSEMI MBR20T100CT

MBR20T100CT
FEATURES
Base 2
common
cathode
Anode
TO-220AB
Anode
2
1 Common 3
cathode
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175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
Optimized VF vs. IR trade off for high efficiency
Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Full lead (Pb)-free and RoHS compliant devices
Designed and qualified for industrial level
APPLICATIONS
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PRODUCT SUMMARY
IF(AV)
2 x 10 A
VR
100 V
VF at 10 A at 125 °C
0.68 V
High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
Dc-to-dc systems
Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
VRRM
UNITS
100
VF
10 Apk, TJ = 125 °C (typical, per leg)
TJ
Range
V
0.62
- 55 to 175
°C
MBR20T100CT
UNITS
100
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
TEST CONDITIONS
TJ = 25 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
SYMBOL
per leg
per device
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 159 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 3 A, L = 12 mH
Repetitive avalanche current per leg
IAR
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
10 ms sine or 6 ms rect. pulse
VALUES
10
20
UNITS
A
850
A
200
54
mJ
IAS at
TJ max.
A
1
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MBR20T100CT
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
10 A
VFM (1)
Forward voltage drop per leg
TJ = 25 °C
20 A
10 A
TJ = 125 °C
20 A
IRM (1)
Reverse leakage current per leg
Junction capacitance per leg
CT
Series inductance per leg
LS
Maximum voltage rate of change
dV/dt
TYP.
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
MAX.
UNITS
-
0.79
-
0.88
-
0.68
-
0.80
-
100
µA
V
-
4
mA
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
400
-
pF
Measured lead to lead 5 mm from package body
8.0
-
nH
-
10 000
V/µs
Rated VR
Note
Pulse width < 300 µs, duty cycle < 2 %
(1)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Marking device
2
UNITS
- 55 to 175
°C
2
RthJC
DC operation
1
RthCS
Mounting surface, smooth and greased
°C/W
0.5
2
g
0.07
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style TO-220AB
MBR20T100CT
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MBR20T100CT
100
Reverse Current - IR (mA)
175°C
150°C
125C
1
100°C
0.1
75°C
0.01
50°C
0.001
25°C
0.0001
0
20
40
60
80
100
Reverse Voltage - VR (V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
Tj = 175°C
10
Tj = 125°C
Tj = 25°C
100
1
0.0
0.5
1.0
1.5
10
0
20
Forward Voltage Drop - VFM (V)
40
60
80
100
120
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
D = 0.75
1
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.1
0.01
1E-05
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
t1, Rectangular Pulse Duration (Seconds)
1E+00
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
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MBR20T100CT
Average Power Loss - (Watts)
Allowable Case Temperature (°C)
180
175
170
165
DC
160
Square wave (D=0.50)
80% rated Vr applied
155
180°
120°
90°
60°
30°
6
RMS Limit
DC
3
see note (1)
0
150
0
2
4
6
8
0
10 12 14 16
3
6
9
12
15
Average Forward Current - IF(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - IFSM (A)
Average Forward Current - IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
1000
100
10
100
1000
10000
Square Wave Pulse Duration - tp (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
4
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MBR20T100CT
Avalanche Current (A)
100
Tj = 25°C
10
Tj = 125°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Avalanche Energy (mJ)
Tj = 25°C
Tj = 125°C
10
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
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5
MBR20T100CT
ORDERING INFORMATION TABLE
Device code
MBR
20
T
100
CT
1
2
3
4
5
1
-
MBR series
2
-
Current rating (20 = 20 A)
3
-
T = Trench
4
-
Voltage rating (100 = 100 V)
5
-
CT = Essential part number
Tube standard pack quantity: 50 pieces
LINKS TO RELATED DOCUMENTS
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