KBJ4A THRU KBJ4M KI SEMICONDUCTOR Features • • • • 4 Amp GLASS PASSIVATED BRIDGE RECTIFIERS 50 to 1000 Volts Diff used Junc ti on Low Forward Volt age Drop High Curr ent Capabil ity UL Recognized File # E165989 KB J Maximum Ratings • • Operating Junction Temperature: -5 5°C to + 150 °C Storage Temperature: -55°C to +150°C P D A Catalog Number K BJ4005 KB J401 KB J 402 KB J404 KB J406 KB J408 KB J410 Device Marking Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V KBJ4A KBJ4B KBJ4D KBJ4G KBJ4J KBJ4K KBJ4M Maximum RMS Voltage Maximum DC Blocking Voltage 35V 70V 140V 280V 420V 560V 700V E O F B + ~ ~ N - G C H 50V 100V 200V 400V 600V 800V 1000V I J L K M DIMENSIONS Electrical Characteristics @ 25 °C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Forward Voltage Drop Per Element Maximum DC Reverse Current At Rated DC Blocking Voltage 2 I t Rating for fusing TC = 100°C IF(AV) 4.0A IFSM 150A VF 1.0V IR 10µA TA = 25°C 500µA TC = 100°C 2 It 8.3ms, half sine IFM = 2.0A per element; TA = 25°C* DIM A B C D E F G H I J K L M N O P INCHES MIN MAX .976 .992 .579 .602 .154 .161 .173 .189 .134 .150 .122 .134 .130 .146 .035 .043 .059 .075 .677 .700 .287 .303 .098 .114 .024 .031 .366 .381 .118X45 ° .122 .134 MM MIN MAX 24.80 25.20 14.70 15.30 3.90 4.10 4.40 4.80 3.40 3.80 3.10 3.40 3.30 3.70 0.90 1.10 1.50 1.90 17.20 17.80 7.30 7.70 2.50 2.90 0.60 0.80 9.30 9.70 3.0X45 ° 3.10 3.40 NOTE 93A 2S (t<8.35ms) KI SEMICONDUCTOR