LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon z We declare that the material of product compliance with RoHS requirements. L2SC4617QT1G Series ORDERING INFORMATION Device Marking Shipping L2SC4617QT1G BQ 3000 Tape & Reel L2SC4617QT3G BQ 10000 Tape & Reel L2SC4617RT1G BR 3000 Tape & Reel L2SC4617RT3G BR 10000 Tape & Reel L2SC4617ST1G BS 3000 Tape & Reel L2SC4617ST3G BS 10000 Tape & Reel SC-89 COLLECTOR 3 !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 0.15 A Collector power dissipation PC 0.15 W Parameter Junction temperature Tj 150 ˚C Storage temperature Tstg −55~+150 ˚C 1 BASE 2 EMITTER !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1 mA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA Conditions Collector cutoff current ICBO − − 0.1 µA VCB=60V Emitter cutoff current IEBO − − 0.1 µA VEB=7V VCE(sat) − − 0.5 V IC/IB=50mA/5mA hFE 120 − 560 − VCE=6V, IC=1mA Transition frequency fT − 180 − MHz Output capacitance Cob − 2.0 3.5 pF Collector-emitter saturation voltage DC current transfer ratio VCE=12V, IE=2mA, f=30MHz VCB=12V, IE=0A, f=1MHz !Device marking L2SC4617QT1G=BQ L2SC4617RT1G=BR L2SC4617ST1G=BS ! hFE values are classified as follows: Item Q R S hFE 120~270 180~390 270~560 Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L2SC4617QT1G Series !Electrical characterristic curves COLLECTOR CURRENT : IC (mA) 2 1 0.5 0.2 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig.1 Fig.2 Grounded emitter propagation characteristics 1.2 DC CURRENT GAIN : hFE VCE=5V 3V 1V 100 50 20 2 5 10 20 50 100 200 1.6 2.0 VCE=5V 25°C 200 −55°C 100 50 20 10 0.2 27µA 8 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 4 IB=0A 12 8 16 20 COLLECTOR TO EMITTER VOLTAGE : V CE (V) Grounded emitter output characteristics ( Ι ) Ta=100°C 200 0.5 1 0.8 500 Ta=25°C 10 0.2 0.4 30µA Ta=25°C 0 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE 0.30mA 0 0.1 0 500 80 10 Fig.3 COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) 5 25°C −55°C 10 Ta=100°C COLLECTOR CURRENT : IC (mA) 20 0.50mA mA 0.45 A 0.40m m 0.35 A Ta=25°C VCE=6V COLLECTOR CURRENT : I C (mA) 100 50 Grounded emitter output characteristics ( ΙΙ ) 0.5 Ta=25°C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current Rev.O 2/4 LESHAN RADIO COMPANY, LTD. IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 IC/IB=50 Ta=100°C 25°C −55°C 0.2 0.1 0.05 0.02 0.01 0.2 COLLECTOR CURRENT : IC (mA) 5 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IE=0A IC=0A 2 2 5 10 20 50 100 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) 20 Cib 0.5 1 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) 10 TRANSITION FREQUENCY : fT (MHz) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) L2SC4617QT1G Series Fig.9 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current Rev.O 3/4 LESHAN RADIO COMPANY, LTD. L2SC4617QT1G Series SC-89 A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- H MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 −−− −−− 10 1.50 1.60 1.70 MIN 0.059 0.030 0.024 0.009 0.004 0.012 −−− −−− 0.059 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF −−− −−− 0.063 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 10 0.067 SEATING PLANE H L G RECOMMENDED PATTERN OF SOLDER PADS Rev.O 4/4