LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBT6520LT1G We declare that the material of product compliance with RoHS requirements. Ordering Information 3 Device Marking Shipping LMBT6520LT1G 2Z 3000/Tape&Reel LMBT6520LT3G 2Z 10000/Tape&Reel 1 2 SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –350 Vdc Collector–Base Voltage V CBO –350 Vdc Emitter–Base Voltage V –5.0 Vdc EBO Base Current IB –250 mA Collector Current — Continuous IC –500 mAdc 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW RθJA PD 1.8 556 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 417 –55 to +150 mW/°C °C/W °C Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBT6520LT1G = 2Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage (I C = –1.0 mA ) V (BR)CEO –350 — Vdc Collector–Base Breakdown Voltage(I E = –100 µA ) Emitter–Base Breakdown Voltage(I E = –10 µA) Collector Cutoff Current( V CB = –250V ) V (BR)CBO V (BR)EBO I CBO –350 –5.0 — — — –50 Vdc Vdc nA I EBO — –50 nA OFF CHARACTERISTICS Emitter Cutoff Current( V EB = –4.0V ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 20 30 30 20 15 — — 200 200 — — — — — –0.30 –0.35 –0.50 –1.0 — — — –0.75 –0.85 –0.90 BE(on) — –2.0 Vdc fT 40 200 MHz ON CHARACTERISTICS DC Current Gain (I C = –1.0 mAdc, V CE = –10 Vdc) (I C = –10mAdc, V CE = –10 Vdc) (I C = –30 mAdc, V CE = –10 Vdc) (I C = –50 mAdc, V CE = –10 Vdc) (I C = –100 mAdc, V CE = –10 Vdc) Collector–Emitter Saturation Voltage (I C = –10mAdc, I B = –1.0mAdc) (I C = –20 mAdc, I B = –2.0 mAdc) (I C = –30 mAdc, I B = –3.0mAdc) (I C = –50 mAdc, I B = –5.0 mAdc) Base – Emitter Saturation Voltage (I C = –10mAdc, I B = –1.0mAdc,) (I C = –20mAdc, I B = –2.0mAdc,) (I C = –30mAdc, I B = –3.0mAdc,) Base–Emitter On Voltage (I C = –100mAdc, V CE = –10V ) hFE — VCE(sat) Vdc VBE(sat) V Vdc SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product (V CE = –20 V, I C = –10mA, f = 20 MHz) Collector –Base Capacitance (V CB = –20 V, f = 1.0 MHz) Emitter –Base Capacitance (V EB= –0.5 V, f = 1.0 MHz) C cb — 6.0 pF C eb — 100 pF Rev.O 2/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G 100 T J = 125°C 100 25°C 70 50 –55°C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 f = 20 MHz 20 10 1.0 2.0 5.0 7.0 10 20 30 50 70 I C , COLLECTOR CURRENT (mA) 1.0 V BE(sat) @ I C /I B = 10 V BE(on) @ V CE = 10 V 100 2.5 IC 2.0 IB = 10 1.5 25°C to 125°C 1.0 0.5 R θVC for V CE(sat) 0 –55°C to 25°C –0.5 0.4 –1.0 –55°C to 125°C –1.5 0.2 V CE(sat) @ I C /I B = 10 V CE(sat) @ I C /I B = 5.0 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 R θVBfor V BE –2.0 –2.5 1.0 100 2.0 3.0 5.0 7.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. “On” Voltages Figure 4. Temperature Coefficients 70 100 1.0k 100 70 700 T J = 25°C 50 V CE(off) = 100 V 500 I C /I B = 5.0 T J = 25°C t d @ V BE(off) = 2.0 V C eb 300 30 20 200 10 100 tr t, TIME (ns) C, CAPACITANCE (pF) 3.0 Figure 2. Current–Gain — Bandwidth Product 1.2 V, VOLTAGE (VOLTS) T J = 25°C V CE = 20 V 30 Figure 1. DC Current Gain T J = 25°C 0.6 50 I C , COLLECTOR CURRENT (mA) 1.4 0.8 70 100 R θV , TEMPERATURE COEFFICIENTS (mV/ °C) h FE , DC CURRENT GAIN V CE = 10 V f T , CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) 200 7.0 5.0 C cb 3.0 70 50 30 20 2.0 10 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Turn–On Time 70 100 Rev.O 3/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G 10k 7.0k 5.0k tS 3.0k t, TIME (ns) 2.0k V CE(off) = 100 V I C /I B = 5.0 tr 1.0k I B1 = I B2 T J = 25°C 700 500 300 200 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) Figure 7. Turn–On Time +V CC V CC ADJUSTED FOR V CE(off) = 100 V +10.8 V 2.2 k 50 Ω SAMPLING SCOPE 20 k 50 1.0 k 1/2MSD7000 –9.2 V PULSE WIDTH ~ ~ 100 ms t r , t f <5.0 ns DUTY CYCLE <1.0% (ADJUST FOR V (BE)off = 2.0 V) APPROXIMATELY –1.35 V FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES Figure 8. Switching Time Test Circuit RESISTANCE (NORMALIZED) 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 SINGLE PULSE 0.05 Z qJC(t) = r(t) • R 0.03 qJC T J(pk) – T C = P (pk) Z qJC(t) Z qJA(t) = r(t) • R qJA T J(pk) – T A = P (pk) Z qJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 t, TIME (ms) Figure 9. Thermal Response Rev.O 4/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G FIGURE A t P PP PP t 1 1/f DUTY CYCLE =t 1 f = t1 tP PEAK PULSE POWER = P P Design Note: Use of Transient Thermal Resistance Data Rev.O 5/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 6/6