LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 2 Unit Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage V Collector Current — Continuous EBO IC –4.0 Vdc –500 mAdc SC-70 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW R θJA PD 1.2 833 200 mW/°C °C/W mW R θJA T J , T stg 1.6 625 –55 to +150 mW/°C °C/W °C Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBTA55WT1G = 2H; LMBTA56 WT1G = 2GM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B= 0 ) V LMBTA55 LMBTA56 Emitter–Base Breakdown Voltage V Vdc (BR)CEO (BR)EBO –60 –80 — — –4.0 — Vdc — –0.1 µAdc (I E = –100 µAdc, I C = 0 ) Collector Cutoff Current ( V CE = –60Vdc, I B = 0) Collector Cutoff Current ( V CB = –60Vdc, I E= 0) LMBTA55 — –0.1 ( V CB = –80Vdc, I E= 0) LMBTA56 — –0.1 I CES µAdc I CBO 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LMBTA55WT1G LMBTA56WT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit VCE(sat) 100 100 — — — –0.25 Vdc V BE(on) — –1.2 Vdc fT 50 — MHz ON CHARACTERISTICS DC Current Gain (I C = –10 mAdc, V CE = –1.0 Vdc) (I C = –100mAdc, V CE = –1.0 Vdc) Collector–Emitter Saturation Voltage (I C = –100mAdc, I B = –10mAdc) Base–Emitter On Voltage (I C = –100mAdc, V CE = –1.0Vdc) hFE — SMALL–SIGNAL CHARACTERISTICS Current –Gain–Bandwidth Product(4) (V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz) 4. f T is defined as the frequency at which |h f e | extrapolates to unity. ORDERING INFORMATION Device Marking LMBTA55WT1G 2H LMBTA56WT1G LMBTA55WT3G 2GM 2H LMBTA56WT3G 2GM TURN−ON TIME TURN−OFF TIME +40 V 100 VCC +VBB +40 V RL 100 RL OUTPUT +10 V tr = 3.0 ns OUTPUT RB Vin 0 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel VCC −1.0 V 5.0 ms Shipping 3000/Tape & Reel Vin * CS t 6.0 pF 5.0 mF RB * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LMBTA55WT1G LMBTA56WT1G SC-70 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 0.016 0.010 0.087 0.053 0.055 0.095 1 XX M 1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 0.9 0.035 SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm inches Rev.O 3/3