MTD8060W Photo Transistor Features: • High Reliability in Demanding Environments Applications: • Optical Switches • Optical Sensors • Fiber Optic Communications • Optical Detectors Absolute Maximum Ratings (Ta=25ºC) Items Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Emitter Collector Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature Junction Temperature Lead Soldering Temp*1 Symbol Vceo Vcbo Vebo Veco Ic Pc Topr Tstg Tj Tsol Ratings 30 30 5 5 50 250 -30 ~ +100 -40 ~ +125 125 260 Unit V V V V mA mW ºC ºC ºC ºC *1: Time 5 Sec max, Position: Up to 3mm from the body. Electrical & Optical Characteristics (Ta = 25ºC) Items Symbol Conditions Min 2 Collector Emitter Current Icel Vce=20V, Ee=0.5mW/cm * -Collector Dark Current Iceo Vce=20V, Ee=mW/cm2* -C-E Saturation Voltage VCE(sat) Ic=0.2mA, Ee=5mW/cm2* -Spectral Sensitivity λ --Peak Sensitivity Wavelength λp --Switching time (Rise Time) Tr RL=100Ω , Vce=5V, Ic=0.5mA -Switching time (Fall Time) Tf RL=100Ω , Vce=5V, Ic=0.5mA -Angular Response θ --- Typ Max 1.0 --100 0.2 -400~1100 -880 -10 -10 -±55 -- Unit mA nA V nm nm μS μS deg *Color Temperature = 2870ºK Standard Tungsten Lamp www.marktechopto.com 800.984.5337 MTD8060W Graphs: ICEL vs IRRADIANCE ICEL vs VCE 2 2.0mW/cm 2 1.5mW/cm 2 3 1.0mW/cm 2 2 0.5mW/cm 2 1 6 4 2 0 0 05 10 15 5 60 40 20 -90 IRRADIANCE(mW/cm2) 100 RELATIVE RESPONSE(%) 120 250 150 100 50 0 -300 30 60 90 RELATIVE RESPONSE vs λ 300 200 -60 ANGULAR DISPLACEMENT (deg.) THERMAL DERATING CURVE DISSIPATION (mW) 80 0 01234 20 VCE (V) COLLECTOR POWER 100 CURRENT(%) 4 2.5mW/cm RELATIVE C0LLECTOR 5 COLLECTOR CURRENT (mA ) COLLECTOR CURRENT (mA) ANGULAR DISPLACEMENT 120 8 6 80 60 40 20 0 -40- 20 02 04 06 08 01 00 120 4005 00 6007 00 AMBIENT TEMPERATURE(℃) www.marktechopto.com 8009 00 1000 1100 1200 WAVELENGTH(nm) 800.984.5337