MTE8700N Infrared Emitting Diode Features: • High Output Power • Parallel Rays (Excellent) • High Reliability in Demanding Environments Applications: • Optical Switches • Linear & Rotary Encoder Absolute Maximum Ratings (Ta=25ºC) Items Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage Power Dissipation Operating Temperature Storage Temperature Junction Temperature Lead Soldering Temp*2 Symbol IF IFP VR PD Topr Tstg Tj Tls Ratings 100 1.0 5 200 -30 ~ +100 -40 ~ +125 125 260 Unit mA A V mW ºC ºC ºC ºC *1: Tw=10μS, T=10mS *2: Time 5 Sec max, Position: Up to 3mm from the body. Dimensions (Unit:mm) www.marktechopto.com 800.984.5337 MTE8700N Electrical & Optical Characteristics (Ta = 25ºC) Items Symbol Conditions Min Typ Max Unit Power Output PO IF=50mA -6.5 -mW Forward Voltage VF IF=50mA -1.55 2.0 V Reverse Current IR VR=5V --10 μA Peak Wavelength λp IF=50mA -870 -nm Spectral Line Half Width Δλ IF=50mA -45 -nm Half Intensity Beam Angle θ IF=50mA -±4 -deg. ± $VU0GG'SFRVFODZGD*'1N"N"QQ.)[ Junction Capacitance Cj 1MHz, V=0V -50 -pF Temp. Coefficient of PO P/T IF=10mA --0.3 -%/ºC Temp Coefficient of VF V/T IF=10mA --2.1 -mV/ºC Graphs: www.marktechopto.com 800.984.5337