MRSM75
Rotation detection MR sensor
FEATURES
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Rotation Detection sensor
-Various usages for rotation detection
Operating with independent pole
Superior Temperature stability
Wide operating source voltage
No contact detection sensor
-dependable for various use
FUNDEMENTAL OPERATION
Direction of Magnetic Field
Circuit Block
Ｖｃｃ
＋
－
A Direction
B Direction
ＯＵＴ
ＧＮＤ
PERFORMANCE
Performance Characteristics (Ta = 25±3ºC unless otherwise specified)
Operating require Condition
Output Voltage
H = 0 .0mT(Magnetic Flux Density)
{0 A/m (Magnetic Field Strength)}
When magnetic field is applied H ≧ 3.0(Typ)mT(Magnetic Flux Density)
To A direction
{2.4kA/m (Magnetic Field Strength)}
When magnetic field is applied H ≧ 3.0 mT(Magnetic Flux Density)
To B direction
{2.4kA/m (Magnetic Field Strength)}
When power switch is ON
Unfixed
Hi-level
Lo-level
Operating Conditions Recommended (Ta = 25±3ºC unless otherwise specified)
Item
Symbol
Condition
Min
Std
Max
Unit
Source Voltage
Vcc
-
3
12
30
V
Load Resistance
RL
Vcc=12V
10.0
-
-
Ambient Temperature
Ta
-
-20
25
80
-
3.0
(2.4)
-
Min
Std
Applied magnetic Field
*1)
1 [mT](SI) = 10 [G] (CGS)
*2)
H
-
k
ºC
mT(*1
(kA/m)
(*2
( ) = [kA/m](SI)
Electrical Characteristics (Ta = 25±3℃
unless otherwise specified)
Item
Symbol
Condition
Circuit Current
Icc
Vcc=12V
Output open
Output Voltage 1
VoH
RL=10
Max
Unit
5
mA
10
Vcc=12V
Output Voltage 2
VoL
RL=10
1
Vcc=12V
Response Frequency
f(max)
Vcc=12V
2
kHz