OPTODIODE OD

HIGH TEMPERATURE GaAlAs IR EMITTERS
OD-850WHT
FEATURES
• Extended operating temperature range
• No internal coatings
• No derating or heat sink required to 80°C
• Standard 2-lead TO-46 hermetic package
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
TEST CONDITIONS
MIN
TYP
Total Power Output, Po
PARAMETERS
IF = 100mA
19
26
mW
Peak Emission Wavelength, λP
IF = 20mA
850
nm
Spectral Bandwidth at 50%, Δλ
IF = 20mA
40
nm
Half Intensity Beam Angle, θ
IF = 20mA
80
Deg
Forward Voltage, VF
IF = 100mA
1.6
IR = 10μA
Reverse Breakdown Voltage, VR
5
MAX
2
UNITS
Volts
30
Volts
Rise Time
IFP = 20mA
20
nsec
Fall Time
IFP = 20mA
20
nsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
200mW
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)
100mA
2
300mA
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
1
260°C
Derate per Thermal Derating Curve above 25°C
2Derate
linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-65°C to 150°C
Maximum Junction Temperature
150°C
Thermal Resistance, RTHJA1
400°C/W Typical
Thermal Resistance, RTHJA2
135°C/W Typical
1Heat
2Air
transfer minimized by measuring in still air with minimum heat conducting through leads
circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
HIGH TEMPERATURE GaAlAs IR EMITTERS
200
OD-850WHT
THERMAL DERATING CURVE
POWER DISSIPATION (mW)
MAXIMUM RATINGS
180
INFINITE
HEAT SINK
160
140
NO
HEAT SINK
120
100
80
60
40
20
0
25
50
75
100
AMBIENT TEMPERATURE (°C)
120
150
POWER OUTPUT vs TEMPERATURE
1.5
1.4
80
RELATIVE POWER OUTPUT
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
RADIATION PATTERN
100
60
40
20
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
–100
–80
–60
–40
–20
0
20
40
BEAM ANGLE, θ(deg)
60
80
0.5
–50
100
SPECTRAL OUTPUT
100
0
25
50
AMBIENT TEMPERATURE (°C)
75
100
POWER OUTPUT vs FORWARD CURRENT
80
POWER OUTPUT, Po (mW)
RELATIVE POWER OUTPUT (%)
100
–25
60
40
10
DC
20
0
750
800
850
WAVELENGTH, λ(nm)
900
950
1
10
100
FORWARD CURRENT, IF (mA)
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013