RUICHIPS RU30100L

RU30100L
N-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• 30V/100A,
RDS (ON) =2.2 mΩ(tpy.)@VGS=10V
RDS (ON) =4 mΩ(tpy.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
TO-252
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• High Frequency Synchronous Buck
Converters for Computer Processor Power
• DC-DC Converters
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
175
°C
-55 to 175
°C
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
①
V
TC=25°C
100
A
TC=25°C
400
TC=25°C
100
TC=100°C
TC=25°C
86
103
W
TC=100°C
52
W
1.45
°C/W
306
mJ
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD
RθJC
Maximum Power Dissipation
Thermal Resistance-Junction to Case
②
A
①
①
A
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2012
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RU30100L
Electrical Characteristics
Symbol
(TC=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU30100L
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VGS=0V, IDS=250µA
VDS= 30V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
④
V
30
30
1
-
µA
3
V
±100
nA
VGS=10V, IDS=50A
2.2
3.5
mΩ
VGS= 4.5V, IDS=35A
4
6.5
mΩ
1.2
V
Drain-Source On-state Resistance
Diode Characteristics
VSD
④
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=50A, VGS=0V
ISD=50A, dlSD/dt=100A/µs
25
ns
23
nC
1.4
Ω
⑤
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,
VDS=15V,
Frequency=1.0MHz
2880
580
pF
290
10
VDD=15V, RL=0.3Ω,
IDS=50A, VGEN=10V,
RG=5Ω
Turn-off Fall Time
24
ns
21
12
⑤
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
28
VDS=24V, VGS=10V,
IDS=50A
6
nC
11
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 60A.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =35A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. A–MAY., 2012
2
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RU30100L
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A–MAY., 2012
Square Wave Pulse Duration (sec)
3
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RU30100L
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance (m)
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A–MAY., 2012
Tj - Junction Temperature (°C)
4
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RU30100L
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A–MAY., 2012
QG - Gate Charge (nC)
5
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RU30100L
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. A–MAY., 2012
6
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RU30100L
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size
Tape width
RU30100L
RU30100L
TO-252
Tape&Reel
2500
13’’
16mm
Copyright Ruichips Semiconductor Co., Ltd
Rev. A–MAY., 2012
7
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RU30100L
Package Information
TO252-2L
SYMBOL
MM
INCH
MM
SYMBOL
INCH
MIN
MAX
MIN
MAX
A
2.200
2.400
0.087
0.094
L
A1
0.000
0.127
0.000
0.005
L1
b
0.660
0.860
0.026
0.034
L2
C
0.460
0.580
0.018
0.023
L3
D
6.500
6.700
0.256
0.264
L4
0.600
1.000
0.024
0.039
D1
5.100
5.460
0.201
0.215
Φ
1.100
1.300
0.043
0.051
θ
0°
8°
0°
8°
0.000
0.300
0.000
0.012
D2
4.830 REF.
0.190 REF.
E
6.000
6.200
0.236
0.244
h
e
2.186
2.386
0.086
0.094
V
MIN
MAX
MIN
MAX
9.800
10.400
0.386
0.409
2.900 REF.
1.400
1.700
1.600 REF.
5.350 REF.
0.114 REF.
0.055
0.067
0.063REF.
0.211 REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A–MAY., 2012
8
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RU30100L
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. A–MAY., 2012
9
www.ruichips.com