SMP400G-X4 MECHANICAL DATA Dimensions in inches. P.I.N. PHOTODIODE 0.175 0.205 0.170 0.210 0.500 Min. FEATURES • • • • • RED PLASTIC ENCAPSULATED PACKAGE 0.1” (2.54mm) LEAD SPACING BUILT IN FILTER SUITABLE FOR REMOTE CONTROL LOW DARK CURRENT 0.015 0.018 DESCRIPTION The SMP400G-X4 is a silicon PIN photodiode which is incorporated in a red plastic package which simultaneously serves as a filter and is also transparent for the red to infra-red emission.The terminals are solder tabs with 0.1” (2.54mm) spacing. Due to its design the diode can be assembled vertically on PC board. 0.095 0.105 0.125 0.165 0.015 0.018 0.080 0.105 Active Area Arrays can be realised by multiple arrangements.This versatile photo detector can be used as a diode as well as a voltage cell. The PIN photodiode is outstanding for low junction capacitance , high cut off frequency and short switching time. It is particularly suitable for IR sound transmission and remote control. TO-92 Package ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range -40°C to +70°C Storage temperature range -45°C to +80°C Temperature coefficient of responsively 0.35% per °C Temperature coefficient of dark current x2 per 8°C rise Reverse Breakdown Voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 60V Prelim. 7/97 SMP400G-X4 CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions. λ at 900nm Responsively Min. Typ. 0.45 0.55 A/W 0.62 mm2 Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark 1V Reverse 0.1 1.0 E = 0 Dark 10V Reverse 0.5 2.5 E = 0 Dark 10µA Reverse E = 0 Dark 0V Reverse 8 12 E = 0 Dark 20V Reverse 1.5 2.5 60 80 30V Reverse Rise Time 50Ω 900nm NEP Max. Units nA V pF 4 ns 7.2 W/√Hz Spectral Response Relative Responsivity (%) 100 80 60 40 20 0 0 Semelab plc. 200 400 600 Wavelength (nm) 800 Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 1000 1200 Prelim. 7/97