STMICROELECTRONICS STTH12T06

STTH12T06
600 V tandem extra fast diode
Datasheet − production data
Features
• High voltage rectifier
• Tandem diodes in series
• Very low switching losses
A
K
• Insulated device with internal ceramic
• Equal thermal conditions for both 300 V diodes
• Static and dynamic equilibrium of internal
diodes are warranted by design
• Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
A
K
TO-220AC ins
STTH12T06DI
Description
Table 1. Device summary
Symbol
Value
IF(AV)
12 A
VRRM
600 V
trr (typ)
15 ns
IRM (typ)
2.3 A
VF (typ)
2.05 V
IFRM
65 A
Tj (max)
175 °C
May 2013
This is information on a product in full production.
This device is part of ST's second generation of
600 V tandem diodes. It has ultralow switchinglosses with a minimized QRR (6.5 nC) that makes
it perfect for use in circuits working in hardswitching mode. In particular the VF/QRR trade-off
positions this device between standard ultrafast
diodes and silicon-carbide Schottky rectifiers in
terms of price/performance ratio.
The device offers a new positioning giving more
flexibility to power-circuit designers looking for
good performance while still respecting cost
constraints.
Featuring ST's Turbo 2 600 V technology, the
device is particularly suited as a boost diode in
continuous conduction mode power factor
correction circuits.
Doc ID024431 Rev1
1/9
www.st.com
9
Characteristics
1
STTH12T06
Characteristics
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
Forward rms current
Value
Tj from 25 to 150 °C
600
Tj = -40 °C
550
Unit
V
22
A
IF(AV)
Average forward current, δ = 0.5
Tc = 75 °C
12
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
90
A
IFRM
Repetitive peak forward current
Tc = 75 °C, δ = 0.1
65
A
Tstg
Storage temperature range
-65 to +175
°C
Operating junction temperature
-40 to +175
°C
Value
Unit
2.4
°C/W
Tj
Table 3. Thermal parameters
Symbol
Rth(j-c)
Parameter
Junction to case
Table 4. Static electrical characteristics
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
Test conditions
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 150 °C
Min.
Max.
Unit
20
VR = VRRM
µA
40
400
2.95
IF = 12A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.75 x IF(AV) + 0.0667 x IF2(RMS)
2/9
Typ.
Doc ID024431 Rev1
V
2.05
2.55
STTH12T06
Characteristics
Table 5. Dynamic characteristics
Symbol
Test conditions
Parameter
IF = 1 A, VR = 30 V,
dIF/dt = -50 A/µs
25
33
IF = 12 A, VR = 400 V,
dIF/dt = -200 A/µs
15
20
IF = 12 A, VR = 400 V,
dIF/dt = -200 A/µs
23
30
Tj = 25 °C
0.83
1.1
Tj = 125 °C
2.3
3
Tj = 25 °C
trr
Reverse recovery time
Tj = 125 °C
IRM
Reverse recovery current
S
Reverse recovery charge
6.5
Tj = 125 °C
30
nC
PF(AV)(W)
Figure 2. Forward voltage drop versus forward
current (typical values)
100.0
45
d =0.05
40
d =0.1
d =0.5
d =0.2
0.7
Tj = 25 °C
Figure 1. Average forward power dissipation
versus average forward current
50
1.4
IF = 12 A, VR = 400 V,
dIF/dt = -200 A/µs
Tj = 125 °C
QRR
ns
A
Tj = 25 °C
Softness factor
Min. Typ. Max. Unit
IFM(A)
d =1
Tj=150 °C
35
Tj=25 °C
10.0
30
25
Tj=125 °C
20
1.0
15
T
10
5
IF(AV)(A)
d=tp/T
tp
VFM(V)
0
0
2
4
6
8
10
12
14
16
Figure 3. Relative variation of thermal
impedance, junction to case, versus pulse
duration
0.1
0.0
Z t h (j-c)/Rt h (j-c)
8
0.9
7
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
IRM(A)
VR=400 V
Tj=125 °C
6
0.7
IF=2 x IF(AV)
5
0.6
IF=IF(AV)
4
0.5
0.4
IF=0.5 x IF(AV)
3
0.3
0.2
1.0
Figure 4. Peak reverse recovery current versus
dIF/dt (typical values)
1.0
0.8
0.5
2
Single pulse
0.1
tp(s)
0.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1
dIF/dt(A/µs)
0
0
100
Doc ID024431 Rev1
200
300
400
500
600
700
800
900
1000
3/9
Characteristics
STTH12T06
Figure 5. Reverse recovery time versus
dIF/dt (typical values)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
t RR(ns)
QRR(nC)
50
60
VR=400 V
Tj=125 °C
VR=400 V
Tj=125 °C
50
40
IF=2 x IF(AV)
40
30
IF=IF(AV)
IF=2 x IF(AV)
20
30
IF=0.5 x IF(AV)
IF=0.5 x IF(AV)
20
IF=IF(AV)
10
10
dIF/dt(A/µs)
0
0
100
200
300
400
500
600
700
800
900
1000
Figure 7. Reverse recovery softness factor
versus dIF/dt (typical values)
SFACTOR
dIF/dt(A/µs)
0
0
100
200
300
400
500
600
700
800
900
1000
Figure 8. Relative variations of dynamic
parameters versus junction temperature
2.50
1.6
IF=IF(AV)
VR=400 V
Reference: Tj=125 °C
2.25
IF=IF(AV)
VR=400 V
Tj=125 °C
2.00
1.2
SFACTOR
1.75
1.50
1.25
0.8
1.00
0.75
0.4
IRM
0.50
0.25
dIF/dt(A/µs)
0.0
0
100
200
300
400
500
600
700
800
900
QRR
Tj (°C)
0.00
25
1000
Figure 9. Junction capacitance versus reverse
voltage applied (typical values)
C(pF)
75
100
125
Figure 10. Relative variation of non-repetitive
peak surge forward current versus pulse
duration
4.0
100
50
IFSM(tp)/IFSM (10ms)
sinusoidal waveform
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
3.5
3.0
2.5
2.0
1.5
VR (V)
10
4/9
tp (ms)
,
1
10
100
1000
1.0
0.1
Doc ID024431 Rev1
1.0
10.0
STTH12T06
Characteristics
Figure 11. Relative variation of non-repetitive peak surge forward current versus
initial junction temperature (sinusoidal waveform)
1.2
IFSM(Tj)/IFSM(25 °C)
1.0
0.8
0.6
0.4
0.2
Tj (°C)
0.0
25
50
75
100
125
Doc ID024431 Rev1
150
175
5/9
Package information
2
STTH12T06
Package information
•
Epoxy meets UL94, V0
•
Cooling method: by conduction (C)
•
Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 12. T0-220AC ins dimension definitions
C
B
ØI
b2
L
F
A
I4
c2
a1
l2
a2
M
b1
e
6/9
Doc ID024431 Rev1
c1
STTH12T06
Package information
Table 6. T0-220AC ins dimension values
Dimensions
Ref.
Millimeters
Min.
A
Typ.
15.20
a1
Inches
Max.
Min.
15.90
0.598
3.75
Typ.
Max.
0.625
0.147
a2
13.00
14.00
0.511
0.551
B
10.00
10.40
0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
4.80
5.40
0.189
0.212
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80
16.80
0.622
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
M
16.40
2.60
Doc ID024431 Rev1
0.646
0.661
0.102
7/9
Ordering information
3
STTH12T06
Ordering information
Table 7. Ordering information
4
Order code
Marking
Package
Weight
STTH12T06DI
STTH12T06DI
TO-220AC ins
2.30 g
Base qty Delivery mode
50
Revision history
Table 8. Document revision history
8/9
Date
Revision
13-May-2013
1
Changes
Initial release
Doc ID024431 Rev1
Tube
STTH12T06
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE
IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH
PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR
ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED
FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN
WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE,
AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS.
PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE
CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID024431 Rev1
9/9