DM74S473 (512 x 8) 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 words by 8 bits configuration. A memory enable input is provided to control the output states. When the device is enabled, the outputs represent the contents of the selected word. When disabled, the 8 outputs go to the ‘‘OFF’’ or high impedance state. PROMs are shipped from the factory with lows in all locations. A high may be programmed into any selected location by following the programming instructions. Y Y Y Y Y Y Advanced titanium-tungsten (Ti-W) fuses Schottky-clamped for high speed Address accessÐ45 ns max Enable accessÐ30 ns max Enable recoveryÐ30 ns max PNP inputs for reduced input loading All DC and AC parameters guaranteed over temperature Low voltage TRI-SAFETM programming Open-collector outputs Block Diagram TL/D/9715 – 1 Pin Names A0–A8 Addresses G Output Enable GND Ground Q0–Q7 Outputs VCC Power Supply TRI-SAFETM is a trademark of National Semiconductor Corporation. C1995 National Semiconductor Corporation TL/D/9715 RRD-B30M105/Printed in U. S. A. DM74S473 (512 x 8) 4096-Bit TTL PROM November 1990 Connection Diagrams Plastic Leaded Chip Carrier (PLCC) Dual-In-Line Package TL/D/9715 – 3 TL/D/9715–2 Top View Top View Order Number DM74S473J, 473AJ, DM74S473N or 473AN See NS Package Number J20A or N20A Order Number DM74S473V or 473AV See NS Package Number V20A Ordering Information Commercial Temp. Range (0§ C to a 70§ C) Parameter/Order Number Max Access Time (ns) DM74S473AN 45 DM74S473N 60 DM74S473AJ 45 DM74S473J 60 DM74S473AV 45 DM74S473V 60 2 Absolute Maximum Ratings (Note 1) Operating Conditions If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage (VCC) Commercial Supply Voltage (Note 2) b 0.5V to a 7.0V Input Voltage (Note 2) Output Voltage (Note 2) Storage Temperature Lead Temp. (Soldering, 10 seconds) ESD to be determined b 1.2V to a 5.5V b 0.5V to a 5.5V b 65§ C to a 150§ C Min Max Units 4.75 5.25 V Ambient Temperature (TA) Commercial 0 a 70 §C Logical ‘‘0’’ Input Voltage Logical ‘‘1’’ Input Voltage 0 2.0 0.8 5.5 V V 300§ C Note 1: Absolute maximum ratings are those values beyond which the device may be permanently damaged. They do not mean that the device may be operated at these values. Note 2: These limits do not apply during programming. For the programming ratings, refer to the programming instructions. DC Electrical Characteristics (Note 1) Symbol Parameter DM74S473 Conditions Min Units Typ Max b 80 b 250 IIL Input Load Current VCC e Max, VIN e 0.45V IIH Input Leakage Current VCC e Max, VIN e 2.7V 25 mA VCC e Max, VIN e 5.5V 1.0 mA 0.45 V 0.80 V 50 mA 100 mA b 1.2 V VOL Low Level Output Voltage VIL Low Level Input Voltage VIH High Level Input Voltage IOZ Output Leakage Current (Open-Collector Only) VCC e Min, IOL e 16 mA 0.35 2.0 mA V VCC e Max, VCEX e 2.4V VCC e Max, VCEX e 5.5V VC Input Clamp Voltage VCC e Min, IIN e b18 mA b 0.8 CI Input Capacitance VCC e 5.0V, VIN e 2.0V TA e 25§ C, 1 MHz 4.0 pF CO Output Capacitance VCC e 5.0V, VO e 2.0V TA e 25§ C, 1 MHz, Outputs Off 6.0 pF ICC Power Supply Current VCC e Max, Input Grounded All Outputs Open 110 155 Note 1: These limits apply over the entire operating range unless stated otherwise. All typical values are for VCC e 5.0V and TA e 25§ C. 3 mA AC Electrical Characteristics with Standard Load and Operating Conditions COMMERCIAL TEMP. RANGE (0§ C to a 70§ C) JEDEC Symbol Parameter TAA TAVQV TEA TEVQV TER Symbol DM74S473 Min DM74S473A Typ Max Address Access Time 40 Enable Access Time 15 TEXQX Enable Recovery Time TZX TEVQX TXZ TEXQZ Min Units Typ Max 60 25 45 ns 30 15 30 ns 15 30 15 30 ns Output Enable Time 15 30 15 30 ns Output Disable Time 15 30 15 30 ns Functional Description TITANIUM-TUNGSTEN FUSES National’s Programmable Read-Only Memories (PROMs) feature titanuim-tungsten (Ti-W) fuse links designed to program efficiently with only 10.5V applied. The high performance and reliability of these PROMs are the result of fabrication by a Schottky bipolar process, of which the titaniumtungsten metallization is an integral part, and the use of an on-chip programming circuit. A major advantage of the titanium-tungsten fuse technology is the low programming voltage of the fuse links. At 10.5V, this virtually eliminates the need for guard-ring devices and wide spacings required for other fuse technologies. Care is taken, however, to minimize voltage drops across the die and to reduce parasitics. The device is designed to ensure that worst-case fuse operating current is low enough for reliable long-term operation. The Darlington programming circuit is liberally designed to insure adequate power density for blowing the fuse links. The complete circuit design is optimized to provide high performance over the entire operating ranges of VCC and temperature. TESTABILITY The Schottky PROM die includes extra rows and columns of fusable links for testing the programmability of each chip. These test fuses are placed at the worst-case chip locations to provide the highest possible confidence in the programming tests in the final product. A ROM pattern is also permanently fixed in the additional circuitry and coded to provide a parity check of input address levels. These and other test circuits are used to test for correct operation of the row and column-select circuits and functionality of input and enable gates. All test circuits are available at both wafer and assembled device levels to allow 100% functional and parametric testing at every stage of the test flow. RELIABILITY As with all National products, the Ti-W PROMs are subjected to an on-going reliability evaluation by the Reliability Assurance Department. These evaluations employ accelerated life tests, including dynamic high-temperature operating life, temperature-humidity life, temperature cycling, and thermal shock. To date, nearly 7.4 million Schottky Ti-W PROM device hours have been logged, with samples in Epoxy B molded DIP (N-package), PLCC (V-package) and CERIP (Jpackage). Device performance in all package configurations is excellent. 4 Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number DM74S473J or 473AJ NS Package Number J20A Molded Dual-In-Line Package (N) Order Number DM74S473N or 473AN NS Package Number N20A 5 DM74S473 (512 x 8) 4096-Bit TTL PROM Physical Dimensions inches (millimeters) (Continued) Plastic Leaded Chip Carrier (V) Order Number DM74S473V or 473AV See NS Package Number V20A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation 1111 West Bardin Road Arlington, TX 76017 Tel: 1(800) 272-9959 Fax: 1(800) 737-7018 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Europe Fax: (a49) 0-180-530 85 86 Email: cnjwge @ tevm2.nsc.com Deutsch Tel: (a49) 0-180-530 85 85 English Tel: (a49) 0-180-532 78 32 Fran3ais Tel: (a49) 0-180-532 93 58 Italiano Tel: (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd. 13th Floor, Straight Block, Ocean Centre, 5 Canton Rd. Tsimshatsui, Kowloon Hong Kong Tel: (852) 2737-1600 Fax: (852) 2736-9960 National Semiconductor Japan Ltd. Tel: 81-043-299-2309 Fax: 81-043-299-2408 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.