ZOWIE Schottky Barrier Diode (20V~100V / 1.0A) SCD12H THRU SCD110H OUTLINE DIMENSIONS FEATURES Unit : mm Case : 2010 Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability Classification 94V-0 0.05 4.5 ± 0.1 2.20 ± 0.1 * * * * * * 0 0.5 0.95 ± 0.2 0.95 ± 0.2 APPLICATION Switching mode power supply applications Portable equipment battery applications High frequency rectification DC / DC Converter Telecommunication + 0.2 0.96 - 0.1 * * * * * JEDEC : SMA DO-214AC MARKING MECHANICAL DATA Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Laser Cathode band marking Weight : 0.02 gram Cathode mark Series code SCD 1 . Amps class Halogen-free type Voltage class PACKING * 3,000 pieces per 7" (178mm ± 2mm) reel * 4 reels per box * 6 boxes per carton o Absolute Maximum Ratings (Ta = 25 C) Rating ITEM Symbol Repetitive peak reverse voltage VRRM Average forward current IF(AV) Peak forward surge current IFSM Operating junction temperature Range Conditions SCD12H SCD14H SCD16H SCD110H 20 40 60 100 8.3ms single half sine-wave TSTG Storage temperature Range V 1.0 A 30 A -55 to +125 Tj Unit -55 to +150 -55 to +150 o C o C o Electrical characteristics (Ta = 25 C) ITEM Forward voltage (NOTE 1) Repetitive peak reverse current Junction capacitance Thermal resistance Symbol VF IRRM Cj Conditions Type Min. Typ. Max. Unit IF = 0.1A IF = 0.5A IF = 1.0A SCD12H / SCD14H - 0.34 0.41 0.47 0.50 V IF = 0.1A IF = 0.5A IF = 1.0A SCD16H - 0.38 0.48 0.60 0.70 V IF = 0.1A IF = 0.5A IF = 1.0A SCD110H - 0.45 0.63 0.76 0.85 V VR = Max. VRRM , Ta = 25 oC - 0.02 0.20 mA VR = 4V, f = 1.0 MHz - 110 - Rth(JA) Junction to ambient (NOTE 2) - 88 - o C/W pF Rth(JL) Junction to lead (NOTE 2) - 28 - o C/W NOTES : (1) Pulse test width PW=300usec , 1% duty cycle. (2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas. REV. 0 2007/12 ZOWIE SCD12H THRU SCD110H (20V~100V/1.0A) FIG.1 - FORWARD CURRENT DERATING CURVE 30 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 1.0 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT SCD16H~SCD110H 0.5 SCD12H~SCD14H 0 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5 0 0 60 80 100 120 140 160 1 180 10 FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 10 IINSTANTANEOUS FORWARD CURRENT, (A) 100 NUMBER OF CYCLES AT 60Hz o LEAD TEMPERATURE, C 1.00 0.10 0.01 10 o TJ=100 C 1.0 0.10 o TJ=25 C 0.01 SCD12H~14H SCD16H SCD110H o Ta=25 C 0.001 .001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 FORWARD VOLTAGE, (V) 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 400 JUNCTION CAPACITANCE, pF o TJ = 25 C f=1.0MHz Vsig=50mVP-P 100 10 .1 1.0 10 100 REVERSE VOLTAGE, VOLTS REV. 0 2007/12