AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary The AOT11N60 & AOTF11N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 11A RDS(ON) (at VGS=10V) < 0.65Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11N60L & AOTF11N60L Top View TO-220 TO-220F D G AOT11N60 G D S G AOTF11N60 Absolute Maximum Ratings TA=25°C unless otherwise noted AOT11N60 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Pulsed Drain Current TC=100°C C ID S S AOTF11N60 600 AOTF11N60L ±30 VGS TC=25°C Continuous Drain Current D 11 8 Units V V 11* 11* 8* 8* A IDM 39 Avalanche Current C IAR 4.8 A Repetitive avalanche energy C EAR 345 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 690 5 50 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG PD 2.2 TL Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 0: Jan 2012 272 0.4 -55 to 150 37.9 0.3 300 mJ V/ns W W/ oC °C °C AOT11N60 65 AOTF11N60 65 AOTF11N60L 65 Units °C/W 0.5 0.46 -2.5 -3.3 °C/W °C/W www.aosmd.com Page 1 of 6 AOT11N60/AOTF11N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.67 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 3.3 µA 3.9 4.5 nΑ V 0.65 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A 0.56 gFS Forward Transconductance VDS=40V, ID=5.5A 12 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 11 A ISM Maximum Body-Diode Pulsed Current 39 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge S 0.73 1320 1656 1990 pF 100 146 195 pF 6.5 11.2 16 pF 1.7 3.5 5.3 Ω 24 30.6 37 VGS=10V, VDS=480V, ID=11A nC 9.6 nC Qgd Gate Drain Charge 9.6 nC tD(on) Turn-On DelayTime 39 ns tr Turn-On Rise Time 58 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=11A,dI/dt=100A/µs,VDS=100V 400 500 600 Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 4.7 5.9 7.1 Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=11A, RG=25Ω 92 ns 42 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4.8A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Jan 2012 www.aosmd.com Page 2 of 6 AOT11N60/AOTF11N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 100 10V -55°C VDS=40V 6.5V 16 10 ID(A) ID (A) 12 6V 125°C 8 1 4 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 1.4 8 10 Normalized On-Resistance 3 1.2 RDS(ON) (Ω Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics 1.0 0.8 VGS=10V 0.6 2.5 VGS=10V ID=5.5A 2 1.5 1 0.5 0 0.4 0 4 -100 8 12 16 20 24 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.2 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 0.9 1.0E-04 1.0E-05 0.8 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev0: Jan 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT11N60/AOTF11N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=480V ID=11A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 10 3 Crss 1 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 50 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 10µs 10µs RDS(ON) limited 10 1ms DC 0.1 TJ(Max)=150°C TC=25°C ID (Amps) ID (Amps) 100µs 1 1ms 1 10ms TJ(Max)=150°C TC=25°C 0.1 0.01 100µs RDS(ON) limited 10 DC 0.01 1 10 100 1000 1 10 100 1000 VDS (Volts) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT11N60 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF11N60 (Note F) 100 12 10µs 100µs 1ms 1 10ms TJ(Max)=150°C TC=25°C 0.1 DC 0.1s 1s 10 Current rating ID(A) RDS(ON) limited 10 ID (Amps) 0.1s 1s 8 6 4 2 0 0.01 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOTF11N60L (Note F) Rev0: Jan 2012 www.aosmd.com 0 25 50 75 100 125 150 TCASE (°C) Figure 12: Current De-rating (Note B) Page 4 of 6 AOT11N60/AOTF11N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.46°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOT11N60(Note F) 1 10 Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F) Rev0: Jan 2012 www.aosmd.com Page 5 of 6 AOT11N60/AOTF11N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: Jan 2012 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6