AP02N60I
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching
▼ Simple Drive Requirement
G
BVDSS
600V
RDS(ON)
8Ω
ID
2A
S
Description
The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
GD
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
± 30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
2
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
1.26
A
1
IDM
Pulsed Drain Current
3.6
A
PD@TC=25℃
Total Power Dissipation
22
W
0.176
W/℃
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
80
mJ
IAR
Avalanche Current
2
A
EAR
Repetitive Avalanche Energy
2
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
5.7
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
200806054
AP02N60I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
600
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1A
-
-
8
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=20V, ID=1A
-
0.2
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=2A
-
14
-
nC
VGS=0V, ID=1mA
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8.5
-
nC
VDS=300V
-
9.5
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=2A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
21
-
ns
tf
Fall Time
RD=150Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
155
-
pF
Coss
Output Capacitance
VDS=25V
-
27
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
14
-
pF
Min.
Typ.
-
-
2
A
-
-
3.6
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
3
Forward On Voltage
Tj=25℃, IS=2A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25Ω , IAS=2A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N60I
1.5
T C =25 o C
10V
6.0V
T C =150 o C
0.8
10V
6.0V
5.5V
ID , Drain Current (A)
ID , Drain Current (A)
5.5V
1
5.0V
0.5
0.6
5.0V
0.4
V GS =4.5V
0.2
V GS =4.5V
0
0
0
5
10
15
0
20
5
10
15
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D =1A
V GS =10V
2.4
1.1
Normalized R DS(ON)
Normalized BVDSS (V)
2
1
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BV DSS v.s. Junction
Temperature
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP02N60I
2.4
30
20
1.6
PD (W)
ID , Drain Current (A)
2
1.2
10
0.8
0.4
0
0
25
50
75
100
125
0
150
50
o
100
150
o
Tc , Case Temperature ( C )
Tc , Case Temperature ( C )
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
10
1
Normalized Thermal Response (R thjc)
Duty Factor = 0.5
100us
1
ID (A)
1ms
10ms
100ms
0.1
T C =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthjc + TC
0.01
1
10
100
1000
10000
V DS (V)
Fig 7. Maximum Safe Operating Area
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4
AP02N60I
f=1.0MHz
200
16
160
Ciss
I D =2A
12
V DS =320V
V DS =400V
10
C (pF)
VGS , Gate to Source Voltage (V)
14
V DS =480V
8
120
80
6
4
40
Coss
Crss
2
0
0
0
2
4
6
8
10
12
14
16
18
1
20
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10
T j = 150 o C
VGS(th) (V)
IS (A)
3
T j = 25 o C
2
1
1
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP02N60I
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
10%
+
S
10 V
VGS
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
Millimeters
SYMBOLS
c2
φ
L4
MIN
NOM
MAX
A
4.30
4.70
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00
10.40
L
12.50
13.00
13.50
L3
2.91
3.41
3.91
L4
14.70
15.40
16.10
φ
e
----
3.20
----
----
2.54
----
L3
A1
b1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
L
b
c
e
Part Marking Information & Packing : TO-220CFM
Part Number
LOGO
20N60I
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
7