AP20GT60ASI-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.7V@IC=12A ▼ RoHS Compliant Product G CE VCES 600V IC 12A TO-220CFM(I) C G E Absolute Maximum Ratings Parameter Symbol Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage +20 V IC@TC=25oC Collector Current 25 A o IC@TC=100 C Collector Current 12 A ICM Pulsed Collector Current1 50 A IF@TC=100oC Diode Forward Current 8 A IFM Diode Pulse Forward Current 40 A o PD@TC=25 C Maximum Power Dissipation 33 W TSTG Storage Temperature Range -55 to 150 o C TJ Operating Junction Temperature Range 150 o C Notes: 1.Pulse width limited by Max. junction temperature . Thermal Data Rthj-c Value Parameter Symbol Thermal Resistance Junction-Case Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Units 3.8 o C/W 5 o C/W 65 o C/W Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol IGES Parameter Gate-to-Emitter Leakage Current Test Conditions VGE=+20V, VCE=0V ICES Collector-Emitter Leakage Current VCE=600V, VGE=0V - - 1 mA VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=12A - 1.7 2.2 V VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=25A - 1.9 - V VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 2 - 6 V Qg Total Gate Charge IC=20A - 95 150 nC Qge Gate-Emitter Charge VCC=480V - 16 - nC Qgc Gate-Collector Charge - 35 - nC td(on) Turn-on Delay Time - 40 - ns tr Rise Time - 20 - ns td(off) Turn-off Delay Time - 140 - ns tf Fall Time VGE=15V VCE=480V, Ic=20A, VGE=15V, RG=5Ω, Inductive Load - 200 400 ns Eon Turn-On Switching Loss - 0.1 - mJ Eoff Turn-Off Switching Loss - 1 - mJ Cies Input Capacitance VGE=0V - 2760 4400 pF Coes Output Capacitance VCE=30V - 65 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 40 - pF Min. - Typ. - Max. Units +100 nA VF FRD Forward Voltage IF=8A - 1.8 2.4 V trr FRD Reverse Recovery Time IF=8A - 30 - ns Qrr FRD Reverse Recovery Charge di/dt = 100 A/μs - 30 - nC Data and specifications subject to change without notice 1 201109211 AP20GT60ASI-HF 120 120 100 80 20V 18V 15V 12V V GE =10V 100 IC , Collector Current (A) T C =25 C IC , Collector Current (A) T C =150 o C 20V 18V 15V 12V V GE =10V o 60 40 80 60 40 20 20 0 0 0 2 4 6 0 8 2 V CE , Collector-Emitter Voltage (V) 4 6 8 10 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 3 V GE = 15 V V GE =15V 80 T C =25 o C VCE(sat) ,Saturation Voltage(V) IC , Collector Current(A) 100 T C =150 o C 60 40 20 3 I C = 40 A 2 I C =30A 2 1 1 0 0 1 2 3 4 5 0 6 40 V CE , Collector-Emitter Voltage (V) 80 120 160 Junction Temperature ( o C) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature 8 f=1.0MHz 5000 Capacitance (pF) IF , Forward Current (A) 4000 6 T j =150 o C T j =25 o C 4 3000 C ies 2000 - 2 1000 0 - 0 0 0.4 0.8 1.2 1.6 2 V F , Forward Voltage (V) Fig 5. Forward Characteristic of 2.4 1 5 9 13 17 21 25 29 C oes C res 33 37 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics Diode 2 AP20GT60ASI-HF 1 Normalized Thermal Response (Rthjc) Power Dissipation (W) 40 30 20 10 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0 0 25 50 75 100 125 0.00001 150 0.0001 0.001 o Fig7. Power Dissipation vs. Junction Temperature 1 10 Fig 8. Effective Transient Thermal Impedance 20 20 T C =25 o C T C = 150 o C VCE , Collector-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) 0.1 t , Pulse Width (s) Junction Temperature ( C ) 15 10 5 I C = 60 A 40 A 20 A 0 15 10 5 I C = 60 A 40 A 20 A 0 0 4 8 12 16 20 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE 16 1000 I C =20A V CC =480V 100 12 IC ,Collctor Current(A) VGE , Gate -Emitter Voltage (V) 0.01 8 10 10us 100us 1 4 1ms 0.1 T C =25 o C Single Pulse 0 10ms 0.01 0 20 40 60 80 100 Q G , Gate Charge (nC) Fig 11. Gate Charge Characterisitics 120 1 10 100 1000 10000 V CE ,Collector - Emitter Voltage(V) Fig 12. SOA Characteristics 3