AP9977AGM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
D2
D2
D1
▼ Single Drive Requirement
▼ Surface Mount Package
D1
BVDSS
60V
RDS(ON)
100mΩ
ID
3.6A
G2
SO-8
S1
S2
G1
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
D2
D1
G2
G1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
60
V
±20
V
3
3.6
A
3
2.9
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
30
A
PD@TA=25℃
Total Power Dissipation
2
W
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Linear Derating Factor
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201207071
AP9977AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Min.
Typ.
VGS=0V, ID=1mA
60
-
-
V
VGS=10V, ID=3A
-
-
100
mΩ
VGS=4.5V, ID=2A
-
-
165
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=3A
-
2.7
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=3A
-
7
12
nC
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
o
IGSS
2
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.3
-
nC
VDS=30V
-
3
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
13
-
ns
tf
Fall Time
RD=30Ω
-
2.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
210
340
pF
Coss
Output Capacitance
VDS=25V
-
35
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Min.
Typ.
IS=1.5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9977AGM
20
20
o
T A =25 C
o
T A =150 C
10V
7.0V
10V
7.0V
16
16
ID , Drain Current (A)
ID , Drain Current (A)
5.0V
12
4.5V
8
V G =4.0V
4
5.0V
12
4.5V
8
V G =4.0V
4
0
0
0
1
2
3
4
5
6
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
140
2.0
I D =2A
I D =3A
T A =25 o C
Normalized RDS(ON)
V G =10V
120
RDSON (mΩ)
2
V DS , Drain-to-Source Voltage (V)
100
1.6
1.2
0.8
80
0.4
60
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.4
8
2
o
o
T j =150 C
VGS(th) (V)
T j =25 C
IS (A)
6
1.6
4
1.2
2
0.8
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9977AGM
12
f=1.0MHz
10000
10
V DS =48V
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
I D =3A
6
Ciss
100
4
Coss
2
Crss
10
0
0
2
4
6
8
1
10
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
1
1ms
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
DUTY=0.5
0.2
0.1
PDM
0.1
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = P DM x Rthja + Ta
0.01
Rthja = 135℃/W
Single Pulse
DC
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
9977AGM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5