Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS FEATURES DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA (Max.) at 150ns 0.5mA (Max.) at 1MHz O O Standby current : 0.3/0.5uA(Max.) at 70 C/85 C VCC = 3.0V Operation current : 25mA (Max.) at 150ns 1mA (Max.) at 1MHz O O Standby current : 0.4/0.7uA (Max.) at 70 C/85 C y High speed access time : -10 100ns (Max.) -15 150ns (Max.) y Automatic power down when chip is deselected y Easy expansion with CE and OE options y Three state outputs and TTL compatible y Fully static operation y Data retention supply voltage as low as 1.5V The BS62UV256 is a high performance, ultra low power CMOS Static Random Access Memory organized as 32,768 by 8 bits and operates form a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with maximum CMOS standby O current of 0.5uA at Vcc=2V at 85 C and maximum access time of 100ns/150ns in 2.0V operation. Easy memory expansion is provided by an active LOW chip enable (CE), and active LOW output enable (OE) and three-state output drivers. The BS62UV256 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62UV256 is available in DICE form, JEDEC standard 28 pin 330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP (normal type) Package. POWER CONSUMPTION POWER DISSIPATION PRODUCT FAMILY OPERATING TEMPERATURE STANDBY Operating (ICCSB1, Max) VCC=3.0V PKG TYPE (ICC, Max) VCC=3.0V VCC=2.0V 1MHz VCC=2.0V fMax. 1MHz fMax. BS62UV256DC DICE BS62UV256PC Commercial O O +0 C to +70 C BS62UV256SC 0.4uA 0.3uA 0.9mA 20mA 0.6mA 10mA BS62UV256TC PDIP-28 Industrial O O -40 C to +85 C BS62UV256SI 0.7uA 0.5uA 1.0mA 25mA 0.8mA 15mA BS62UV256TI 1 2 3 4 5 6 7 8 9 10 11 12 13 14 • BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BLOCK DIAGRAM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 A5 A6 A7 A12 A14 A13 A8 A9 A11 Address 9 Input 512 Row Decoder 512 DQ0 8 DQ1 DQ2 DQ4 BS62UV256TC BS62UV256TI 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Memory Array 512X512 Buffer Data Input Buffer 8 8 DQ5 A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 DQ6 Data Output Buffer Column I/O Write Driver Sense Amp DQ3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 SOP-28 TSOP-28 PIN CONFIGURATIONS OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 SOP-28 TSOP-28 BS62UV256PI A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND PDIP-28 8 64 Column Decoder DQ7 6 CE WE Control Address Input Buffer OE VCC GND A4 A3 A2 A1 A0 A10 Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice. R0201-BS62UV256 1 Revision 2.7 Oct. 2008 BS62UV256 PIN DESCRIPTIONS Name Function A0-A14 Address Input These 15 address inputs select one of the 32,768 x 8-bit in the RAM CE Chip Enable Input CE is active LOW. Chip enable must be active when data read form or write to the device. If chip enable is not active, the device is deselected and is in standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impendence state when OE is inactive. DQ0-DQ7 Data Input/Output Ports VCC There 8 bi-directional ports are used to read data from or write data into the RAM. GND Ground Power Supply TRUTH TABLE MODE CE WE OE I/O OPERATION VCC CURRENT Not selected (Power Down) H X X High Z ICCSB, ICCSB1 Output Disabled L H H High Z ICC Read L H L DOUT ICC Write L L X DIN ICC NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state) ABSOLUTE MAXIMUM RATINGS (1) SYMBOL VTERM TBIAS TSTG PARAMETER Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature RATING (2) -0.5 to 5.0 OPERATING RANGE UNITS RANG AMBIENT TEMPERATURE V Commercial 0 C to + 70 C Industrial -40 C to + 85 C -40 to +125 O C -60 to +150 O C PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA O O O 1.8V ~ 3.6V 1.8V ~ 3.6V CAPACITANCE (1) (TA = 25OC, f = 1.0MHz) SYMBOL PAMAMETER CONDITIONS MAX. UNITS 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. –2.0V in case of AC pulse width less than 30 ns. R0201-BS62UV256 O VCC CIN CIO Input Capacitance Input/Output Capacitance VIN = 0V 6 pF VI/O = 0V 8 pF 1. This parameter is guaranteed and not 100% tested. 2 Revision 2.7 Oct. 2008 BS62UV256 DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC) PARAMETER NAME PARAMETER VCC Power Supply VIL Input Low Voltage VIH Input High Voltage IIL Input Leakage Current ILO Output Leakage Current VOL Output Low Voltage VOH Output High Voltage ICC(5) Operating Power Supply Current ICC1 Operating Power Supply Current ICCSB ICCSB1(6) TEST CONDITIONS VCC=2.0V VCC=3.0V Standby Current – TTL Standby Current – CMOS MIN. TYP.(1) MAX. UNITS 1.8 -- 3.6 V (2) -0.5 VCC=2.0V 1.4 VCC=3.0V 2.2 VIN = 0V to VCC CE= VIH, or OE = VIH, VI/O = 0V to VCC -- -- 0.6 VCC+0.3 1 uA -- -- 1 uA -- -- VCC=2.0V VCC = Max, IOL = 2.0mA VCC = Min, IOH = -0.1mA VCC=2.0V 1.6 VCC = Min, IOH = -1.0mA VCC=3.0V 2.4 CE = VIL, VCC=2.0V 0.2 0.4 -- -- -- -- 15 VCC=3.0V -- -- 25 CE = VIL, VCC=2.0V -- -- 0.8 IDQ = 0mA, f = 1MHz VCC=3.0V -- -- 1.0 CE = VIH, VCC=2.0V -- -- 0.5 IDQ = 0mA VCC=3.0V -- -- 1.0 CE≧VCC-0.2V, VCC=2.0V -- 0.005 0.5 VIN ≧VCC-0.2V or V IN ≦0.2V VCC=3.0V -- 0.01 0.7 O V -- VCC=3.0V IDQ = 0mA, f = FMAX (3) -- VCC = Max, IOL = 0.1mA (4) V 0.8 V V mA mA mA uA 4. FMAX=1/tRC. O 5. ICC (MAX.) is 10mA/20mA at VCC=2.0V/3.0V and TA=70 C. O 6. ICCSB1(MAX.) is 0.3uA/0.4uA at VCC=2.0V/3.0V and TA=70 C. 1. Typical characteristics are at TA=25 C and not 100% tested. 2. Undershoot: -1.0V in case of pulse width less than 20 ns. 3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns. DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC) SYMBOL PARAMETER VDR VCC for Data Retention ICCDR(3) Data Retention Current tCDR Chip Deselect to Data Retention Time tR TEST CONDITIONS CE≧VCC-0.2V, VIN≧VCC-0.2V or VIN≦0.2V CE≧VCC-0.2V, VIN≧VCC-0.2V or VIN≦0.2V MIN. TYP. (1) MAX. UNITS 1.5 -- -- V -- 0.005 0.4 uA 0 -- -- ns -- -- ns See Retention Waveform Operation Recovery Time tRC (2) O 1. VCC=1.5V, TA=25 C and not 100% tested. 2. tRC = Read Cycle Time. O 3. ICCDR(Max.) is 0.3uA at TA=70 C. LOW VCC DATA RETENTION WAVEFORM (CE Controlled) Data Retention Mode VCC CE R0201-BS62UV256 VCC VDR≧1.5V tCDR VIH VCC tR CE≧VCC - 0.2V 3 VIH Revision 2.7 Oct. 2008 BS62UV256 AC TEST CONDITIONS KEY TO SWITCHING WAVEFORMS (Test Load and Input/Output Reference) Input Pulse Levels Vcc / 0V Input Rise and Fall Times 1V/ns Input and Output Timing Reference Level 0.5Vcc Output Load WAVEFORM tCLZ, tOLZ, tCHZ, tOHZ, tWHZ CL = 5pF+1TTL Others CL 100pF+1TTL Output 90% 90% 10% GND (1) L 10% → ← Rise Time : 1V/ns C OUTPUTS MUST BE STEADY MUST BE STEADY MAY CHANGE FROM “H” TO “L” WILL BE CHANGE FROM “H” TO “L” MAY CHANGE FROM “L” TO “H” WILL BE CHANGE FROM “L” TO “H” DON’T CARE ANY CHANGE PERMITTED CHANGE : STATE UNKNOW DOES NOT APPLY CENTER LINE IS HIGH INPEDANCE “OFF” STATE = ALL INPUT PULSES VCC 1 TTL INPUTS → ← Fall Time : 1V/ns 1. Including jig and scope capacitance. AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC) READ CYCLE JEDEC PARAMETER NAME PARANETER NAME tAVAX tRC Read Cycle Time tAVQX tAA tE1LQV CYCLE TIME : 100ns CYCLE TIME : 150ns DESCRIPTION UNITS MIN. TYP. MAX. MIN. TYP. MAX. 100 -- -- 150 -- -- ns Address Access Time -- -- 100 -- -- 150 ns tACS Chip Select Access Time -- -- 100 -- -- 150 ns tGLQV tOE Output Enable to Output Valid -- -- 50 -- -- 100 ns tE1LQX tCLZ Chip Select to Output Low Z 10 -- -- 10 -- -- ns tGLQX tOLZ Output Enable to Output Low Z 10 -- -- 10 -- -- ns tE1HQZ tCHZ Chip Select to Output High Z -- -- 35 -- -- 35 ns tGHQZ tOHZ Output Enable to Output High Z -- -- 30 -- -- 30 ns tAVQX tOH Data Hold from Address Change 10 -- -- 10 -- -- ns R0201-BS62UV256 4 Revision 2.7 Oct. 2008 BS62UV256 SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE 1 (1,2,4) tRC ADDRESS tAA tOH tOH DOUT READ CYCLE 2 (1,3,4) CE tACS DOUT tCLZ tCHZ (5) (5) READ CYCLE 3 (1, 4) tRC ADDRESS tAA OE tOE tOH tOLZ CE tACS tOHZ(5) tCHZ(1,5) tCLZ(5) DOUT NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE = VIL. 3. Address valid prior to or coincident with CE transition low. 4. OE = VIL. 5. Transition is measured ± 500mV from steady state with CL = 5pF. The parameter is guaranteed but not 100% tested. R0201-BS62UV256 5 Revision 2.7 Oct. 2008 BS62UV256 AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC) WRITE CYCLE JEDEC PARAMETER NAME PARANETER NAME tAVAX tWC tAVWH CYCLE TIME : 100ns CYCLE TIME : 150ns DESCRIPTION UNITS MIN. TYP. MAX. MIN. TYP. MAX. Write Cycle Time 100 -- -- 150 -- -- ns tAW Address Valid to End of Write 100 -- -- 150 -- -- ns tE1LWH tCW Chip Select to End of Write 100 -- -- 150 -- -- ns tWLWH tWP Write Pulse Width 50 -- -- 80 -- -- ns tAVWL tAS Address Set up Time 0 -- -- 0 -- -- ns tWHAX tWR Write Recovery Time 0 -- -- 0 -- -- ns tWLQZ tWHZ Write to Output High Z -- -- 30 -- -- 30 ns tDVWH tDW Data to Write Time Overlap 40 -- -- 40 -- -- ns tWHDX tDH Data Hold from Write Time 0 -- -- 0 -- -- ns tGHQZ tOHZ Output Disable to Output in High Z -- -- 30 -- -- 30 ns tWHQX tOW End of Write to Output Active 5 -- -- 5 -- -- ns (CE, WE) SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE 1 (1) tWC ADDRESS tWR(3) OE tCW(11) CE (5) tAW WE tWP(2) tAS tOHZ(4,10) DOUT tDH tDW DIN R0201-BS62UV256 6 Revision 2.7 Oct. 2008 BS62UV256 WRITE CYCLE 2 (1,6) tWC ADDRESS CE tCW(11) (5) tAW WE tAS tWP(2) tWHZ(4,10) tOW (7) (8) DOUT tDW tDH (8,9) DIN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. tWR is measured from the earlier of CE or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10.Transition is measured ± 500mV from steady state with CL = 5pF. The parameter is guaranteed but not 100% tested. 11.tCW is measured from the later of CE going low to the end of write. R0201-BS62UV256 7 Revision 2.7 Oct. 2008 BS62UV256 ORDERING INFORMATION BS62UV256 X X Z YY SPEED 10: 100ns 15: 150ns PKG MATERIAL G: Green, RoHS Compliant P: Pb free, RoHS Compliant GRADE o o C: +0 C ~ +70 C o o I: -40 C ~ +85 C PACKAGE D: DICE S: SOP T: TSOP (8mm x 13.4mm) P: PDIP Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments. PACKAGE DIMENSIONS 0.020 ± 0.005X45° θ WITH PLATING c b c1 BASE METAL b1 SOP - 28 R0201-BS62UV256 8 Revision 2.7 Oct. 2008 BS62UV256 PACKAGE DIMENSIONS (continued) 12°(2x) UNIT SYMBOL 12°(2x) e HD cL 1 E 28 b y Seating Plane 14 12°(2x) ° 15 "A" D GAUGE PLANE A A2 A INCH MM A 0.0433±0.004 1.10±0.10 A1 0.0045±0.0026 0.115±0.065 A2 0.039±0.002 1.00±0.05 b 0.009±0.002 0.22±0.05 b1 0.008±0.001 0.20±0.03 c 0.004 ~ 0.008 0.10 ~ 0.21 c1 0.004 ~ 0.006 0.10 ~ 0.16 D 0.465±0.004 11.80±0.10 E 0.315±0.004 8.00±0.10 e 0.022±0.004 0.55±0.10 HD 0.528±0.008 13.40±0.20 L 0.0197 +0.008 - 0.004 0.50 +0.20 - 0.10 L1 0.0315±0.004 0.80±0.10 y 0.004 Max. 0.1 Max. 0 0°~ 0°~ 8° 8° 0.254 0 A1 14 15 A SEATING PLANE 12°(2x) L L1 "A" DATAIL VIEW WITH PLATING 1 28 b c c1 BASE METAL SECTION b1 A-A TSOP - 28 PDIP - 28 R0201-BS62UV256 9 Revision 2.7 Oct. 2008 BS62UV256 Revision History Revision No. History Draft Date 2.4 Add Icc1 characteristic parameter Jan. 13, 2006 2.5 Change I-grade operation temperature range - from –25OC to –40OC May. 25, 2006 2.6 Add speed grade -10 for 100ns Sep. 10, 2006 Remark Revised ICCSB1 sepc. - from 0.2uA to 0.4uA for C-grade - from 0.4uA to 0.7uA for I-grade Revised ICCDR sepc. - from 0.1uA to 0.4uA for C-grade - from 0.2uA to 0.7uA for I-grade 2.7 Revised ICCSB1 at Vcc=2V sepc. - from 0.7uA to 0.5uA for I-grade - from 0.4uA to 0.3uA for C-grade Oct. 31, 2008 Revised ICCDR sepc. - from 0.7uA to 0.4uA for I-grade - from 0.4uA to 0.3uA for C-grade Typical value of standby current is replaced by maximum value in Featues and Description section Remove “-: Normal” (Leaded) PKG Material in ordering information R0201-BS62UV256 10 Revision 2.7 Oct. 2008