BSI BS62UV256_08

Ultra Low Power CMOS SRAM
32K X 8 bit
BS62UV256
Pb-Free and Green package materials are compliant to RoHS
„ FEATURES
„ DESCRIPTION
y Wide VCC low operation voltage : 1.8V ~ 3.6V
y Ultra low power consumption :
VCC = 2.0V Operation current : 15mA (Max.) at 150ns
0.5mA (Max.) at 1MHz
O
O
Standby current : 0.3/0.5uA(Max.) at 70 C/85 C
VCC = 3.0V Operation current : 25mA (Max.) at 150ns
1mA (Max.) at 1MHz
O
O
Standby current : 0.4/0.7uA (Max.) at 70 C/85 C
y High speed access time :
-10
100ns (Max.)
-15
150ns (Max.)
y Automatic power down when chip is deselected
y Easy expansion with CE and OE options
y Three state outputs and TTL compatible
y Fully static operation
y Data retention supply voltage as low as 1.5V
The BS62UV256 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 32,768 by 8 bits and
operates form a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
O
current of 0.5uA at Vcc=2V at 85 C and maximum access time of
100ns/150ns in 2.0V operation.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62UV256 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62UV256 is available in DICE form, JEDEC standard 28 pin
330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP
(normal type) Package.
„ POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
OPERATING
TEMPERATURE
STANDBY
Operating
(ICCSB1, Max)
VCC=3.0V
PKG TYPE
(ICC, Max)
VCC=3.0V
VCC=2.0V
1MHz
VCC=2.0V
fMax.
1MHz
fMax.
BS62UV256DC
DICE
BS62UV256PC
Commercial
O
O
+0 C to +70 C
BS62UV256SC
0.4uA
0.3uA
0.9mA
20mA
0.6mA
10mA
BS62UV256TC
PDIP-28
Industrial
O
O
-40 C to +85 C
BS62UV256SI
0.7uA
0.5uA
1.0mA
25mA
0.8mA
15mA
BS62UV256TI
1
2
3
4
5
6
7
8
9
10
11
12
13
14
•
BS62UV256PC
BS62UV256PI
BS62UV256SC
BS62UV256SI
„ BLOCK DIAGRAM
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A5
A6
A7
A12
A14
A13
A8
A9
A11
Address
9
Input
512
Row
Decoder
512
DQ0
8
DQ1
DQ2
DQ4
BS62UV256TC
BS62UV256TI
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Memory Array
512X512
Buffer
Data
Input
Buffer
8
8
DQ5
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
DQ6
Data
Output
Buffer
Column I/O
Write Driver
Sense Amp
DQ3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SOP-28
TSOP-28
„ PIN CONFIGURATIONS
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
SOP-28
TSOP-28
BS62UV256PI
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
PDIP-28
8
64
Column Decoder
DQ7
6
CE
WE
Control
Address Input Buffer
OE
VCC
GND
A4 A3 A2 A1 A0 A10
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS62UV256
1
Revision
2.7
Oct.
2008
BS62UV256
„ PIN DESCRIPTIONS
Name
Function
A0-A14 Address Input
These 15 address inputs select one of the 32,768 x 8-bit in the RAM
CE Chip Enable Input
CE is active LOW. Chip enable must be active when data read form or write to the
device. If chip enable is not active, the device is deselected and is in standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
VCC
There 8 bi-directional ports are used to read data from or write data into the RAM.
GND
Ground
Power Supply
„ TRUTH TABLE
MODE
CE
WE
OE
I/O OPERATION
VCC CURRENT
Not selected
(Power Down)
H
X
X
High Z
ICCSB, ICCSB1
Output Disabled
L
H
H
High Z
ICC
Read
L
H
L
DOUT
ICC
Write
L
L
X
DIN
ICC
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
„ ABSOLUTE MAXIMUM RATINGS (1)
SYMBOL
VTERM
TBIAS
TSTG
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under
Bias
Storage Temperature
RATING
(2)
-0.5
to 5.0
„ OPERATING RANGE
UNITS
RANG
AMBIENT
TEMPERATURE
V
Commercial
0 C to + 70 C
Industrial
-40 C to + 85 C
-40 to +125
O
C
-60 to +150
O
C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
O
O
O
1.8V ~ 3.6V
1.8V ~ 3.6V
„ CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns.
R0201-BS62UV256
O
VCC
CIN
CIO
Input
Capacitance
Input/Output
Capacitance
VIN = 0V
6
pF
VI/O = 0V
8
pF
1. This parameter is guaranteed and not 100% tested.
2
Revision
2.7
Oct.
2008
BS62UV256
„ DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
PARAMETER
NAME
PARAMETER
VCC
Power Supply
VIL
Input Low Voltage
VIH
Input High Voltage
IIL
Input Leakage Current
ILO
Output Leakage Current
VOL
Output Low Voltage
VOH
Output High Voltage
ICC(5)
Operating Power Supply
Current
ICC1
Operating Power Supply
Current
ICCSB
ICCSB1(6)
TEST CONDITIONS
VCC=2.0V
VCC=3.0V
Standby Current – TTL
Standby Current – CMOS
MIN.
TYP.(1)
MAX.
UNITS
1.8
--
3.6
V
(2)
-0.5
VCC=2.0V
1.4
VCC=3.0V
2.2
VIN = 0V to VCC
CE= VIH, or OE = VIH,
VI/O = 0V to VCC
--
--
0.6
VCC+0.3
1
uA
--
--
1
uA
--
--
VCC=2.0V
VCC = Max, IOL = 2.0mA
VCC = Min, IOH = -0.1mA
VCC=2.0V
1.6
VCC = Min, IOH = -1.0mA
VCC=3.0V
2.4
CE = VIL,
VCC=2.0V
0.2
0.4
--
--
--
--
15
VCC=3.0V
--
--
25
CE = VIL,
VCC=2.0V
--
--
0.8
IDQ = 0mA, f = 1MHz
VCC=3.0V
--
--
1.0
CE = VIH,
VCC=2.0V
--
--
0.5
IDQ = 0mA
VCC=3.0V
--
--
1.0
CE≧VCC-0.2V,
VCC=2.0V
--
0.005
0.5
VIN ≧VCC-0.2V or V IN ≦0.2V
VCC=3.0V
--
0.01
0.7
O
V
--
VCC=3.0V
IDQ = 0mA, f = FMAX
(3)
--
VCC = Max, IOL = 0.1mA
(4)
V
0.8
V
V
mA
mA
mA
uA
4. FMAX=1/tRC.
O
5. ICC (MAX.) is 10mA/20mA at VCC=2.0V/3.0V and TA=70 C.
O
6. ICCSB1(MAX.) is 0.3uA/0.4uA at VCC=2.0V/3.0V and TA=70 C.
1. Typical characteristics are at TA=25 C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
„ DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL
PARAMETER
VDR
VCC for Data Retention
ICCDR(3)
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
tR
TEST CONDITIONS
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
MIN.
TYP. (1)
MAX.
UNITS
1.5
--
--
V
--
0.005
0.4
uA
0
--
--
ns
--
--
ns
See Retention Waveform
Operation Recovery Time
tRC
(2)
O
1. VCC=1.5V, TA=25 C and not 100% tested.
2. tRC = Read Cycle Time.
O
3. ICCDR(Max.) is 0.3uA at TA=70 C.
„ LOW VCC DATA RETENTION WAVEFORM (CE Controlled)
Data Retention Mode
VCC
CE
R0201-BS62UV256
VCC
VDR≧1.5V
tCDR
VIH
VCC
tR
CE≧VCC - 0.2V
3
VIH
Revision
2.7
Oct.
2008
BS62UV256
„ AC TEST CONDITIONS
„ KEY TO SWITCHING WAVEFORMS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
0.5Vcc
Output Load
WAVEFORM
tCLZ, tOLZ, tCHZ, tOHZ, tWHZ
CL = 5pF+1TTL
Others
CL
100pF+1TTL
Output
90%
90%
10%
GND
(1)
L
10%
→ ←
Rise Time :
1V/ns
C
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
WILL BE CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
=
ALL INPUT PULSES
VCC
1 TTL
INPUTS
→ ←
Fall Time :
1V/ns
1. Including jig and scope capacitance.
„ AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tRC
Read Cycle Time
tAVQX
tAA
tE1LQV
CYCLE TIME : 100ns CYCLE TIME : 150ns
DESCRIPTION
UNITS
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
100
--
--
150
--
--
ns
Address Access Time
--
--
100
--
--
150
ns
tACS
Chip Select Access Time
--
--
100
--
--
150
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
50
--
--
100
ns
tE1LQX
tCLZ
Chip Select to Output Low Z
10
--
--
10
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
10
--
--
10
--
--
ns
tE1HQZ
tCHZ
Chip Select to Output High Z
--
--
35
--
--
35
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
30
--
--
30
ns
tAVQX
tOH
Data Hold from Address Change
10
--
--
10
--
--
ns
R0201-BS62UV256
4
Revision
2.7
Oct.
2008
BS62UV256
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DOUT
READ CYCLE 2 (1,3,4)
CE
tACS
DOUT
tCLZ
tCHZ (5)
(5)
READ CYCLE 3 (1, 4)
tRC
ADDRESS
tAA
OE
tOE
tOH
tOLZ
CE
tACS
tOHZ(5)
tCHZ(1,5)
tCLZ(5)
DOUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BS62UV256
5
Revision
2.7
Oct.
2008
BS62UV256
„ AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tWC
tAVWH
CYCLE TIME : 100ns CYCLE TIME : 150ns
DESCRIPTION
UNITS
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Write Cycle Time
100
--
--
150
--
--
ns
tAW
Address Valid to End of Write
100
--
--
150
--
--
ns
tE1LWH
tCW
Chip Select to End of Write
100
--
--
150
--
--
ns
tWLWH
tWP
Write Pulse Width
50
--
--
80
--
--
ns
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
ns
tWHAX
tWR
Write Recovery Time
0
--
--
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
30
--
--
30
ns
tDVWH
tDW
Data to Write Time Overlap
40
--
--
40
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
30
--
--
30
ns
tWHQX
tOW
End of Write to Output Active
5
--
--
5
--
--
ns
(CE, WE)
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
tWR(3)
OE
tCW(11)
CE
(5)
tAW
WE
tWP(2)
tAS
tOHZ(4,10)
DOUT
tDH
tDW
DIN
R0201-BS62UV256
6
Revision
2.7
Oct.
2008
BS62UV256
WRITE CYCLE 2 (1,6)
tWC
ADDRESS
CE
tCW(11)
(5)
tAW
WE
tAS
tWP(2)
tWHZ(4,10)
tOW
(7)
(8)
DOUT
tDW
tDH
(8,9)
DIN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive. The
data input setup and hold timing should be referenced to the second transition edge of the
signal that terminates the write.
3. tWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10.Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11.tCW is measured from the later of CE going low to the end of write.
R0201-BS62UV256
7
Revision
2.7
Oct.
2008
BS62UV256
„ ORDERING INFORMATION
BS62UV256
X
X
Z
YY
SPEED
10: 100ns
15: 150ns
PKG MATERIAL
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
o
o
C: +0 C ~ +70 C
o
o
I: -40 C ~ +85 C
PACKAGE
D: DICE
S: SOP
T: TSOP (8mm x 13.4mm)
P: PDIP
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
„ PACKAGE DIMENSIONS
0.020 ± 0.005X45°
θ
WITH PLATING
c
b
c1
BASE METAL
b1
SOP - 28
R0201-BS62UV256
8
Revision
2.7
Oct.
2008
BS62UV256
„ PACKAGE DIMENSIONS (continued)
12°(2x)
UNIT
SYMBOL
12°(2x)
e
HD
cL
1
E
28
b
y
Seating Plane
14
12°(2x)
°
15
"A"
D
GAUGE PLANE
A
A2
A
INCH
MM
A
0.0433±0.004
1.10±0.10
A1
0.0045±0.0026
0.115±0.065
A2
0.039±0.002
1.00±0.05
b
0.009±0.002
0.22±0.05
b1
0.008±0.001
0.20±0.03
c
0.004 ~ 0.008
0.10 ~ 0.21
c1
0.004 ~ 0.006
0.10 ~ 0.16
D
0.465±0.004
11.80±0.10
E
0.315±0.004
8.00±0.10
e
0.022±0.004
0.55±0.10
HD
0.528±0.008
13.40±0.20
L
0.0197 +0.008
- 0.004
0.50 +0.20
- 0.10
L1
0.0315±0.004
0.80±0.10
y
0.004 Max.
0.1 Max.
0
0°~
0°~
8°
8°
0.254
0
A1
14
15
A
SEATING PLANE
12°(2x)
L
L1
"A" DATAIL VIEW
WITH PLATING
1
28
b
c c1
BASE METAL
SECTION
b1
A-A
TSOP - 28
PDIP - 28
R0201-BS62UV256
9
Revision
2.7
Oct.
2008
BS62UV256
„ Revision History
Revision No.
History
Draft Date
2.4
Add Icc1 characteristic parameter
Jan. 13, 2006
2.5
Change I-grade operation temperature range
- from –25OC to –40OC
May. 25, 2006
2.6
Add speed grade
-10 for 100ns
Sep. 10, 2006
Remark
Revised ICCSB1 sepc.
- from 0.2uA to 0.4uA for C-grade
- from 0.4uA to 0.7uA for I-grade
Revised ICCDR sepc.
- from 0.1uA to 0.4uA for C-grade
- from 0.2uA to 0.7uA for I-grade
2.7
Revised ICCSB1 at Vcc=2V sepc.
- from 0.7uA to 0.5uA for I-grade
- from 0.4uA to 0.3uA for C-grade
Oct. 31, 2008
Revised ICCDR sepc.
- from 0.7uA to 0.4uA for I-grade
- from 0.4uA to 0.3uA for C-grade
Typical value of standby current is replaced by
maximum value in Featues and Description
section
Remove “-: Normal” (Leaded) PKG Material in
ordering information
R0201-BS62UV256
10
Revision
2.7
Oct.
2008