SMD Schottky Barrier Diodes CDBW120-G Thru. CDBW140-G Forward current: 1.0A Reverse voltage: 20 to 40V RoHS Device Features SOD-123 -For use in low voltage, high frequency inverters. -Free wheeling, and polarity protection applications. 0.152 (3.85) 0.140 (3.55) Mechanical Data 0.026 (0.65) 0.018 (0.45) -Case: SOD-123, molded plastic. 0.067 (1.70) 0.059 (1.50) -Terminals: solderable per MIL-STD-750, method 2026. 0.110 (2.80) 0.102 (2.60) -Polarity: indicated by cathode end. -Weight: 0.0097 gram(approx.). 0.006 (0.15)max 0.049 (1.25) Marking 0.041 (1.05) 0.004 (0.10)max CDBW120-G: SJ 0.02 (0.50)REF CDBW130-G: SK CDBW140-G: SL Dimensions in inches and (millimeter) Maximum Ratings (At Ta=25°C, unless otherwise noted) Symbol CDBW120-G CDBW130-G CDBW140-G Unit Non-repetitive peak reverse voltage VRM 20 30 40 V Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V Parameter RMS reverse voltage Average rectified output current IO 1 A Peak forward surge current @8.3ms IFSM 25 A Repetitive peak forward current IFRM 625 mA PD 250 mW Thermal resistance, junction to ambient RθJA 500 °C/W Storage temperature TSTG -65 ~ +150 °C Power dissipation Electrical Characteristics (At Ta=25°C, unless otherwise noted) Parameter Conditions Symbol Min. 20 30 40 Reverse breakdown voltage CDBW120-G CDBW130-G CDBW140-G IR=1mA VBR Reverse voltage leakage current CDBW120-G CDBW130-G CDBW140-G VR=20V VR=30V VR=40V IR CDBW120-G CDBW130-G CDBW140-G IF=1A Forward voltage 1 mA 0.45 0.55 0.60 V 0.75 0.875 0.90 IF=3A VR=4V, f=1MHz Unit V VF CDBW120-G CDBW130-G CDBW140-G Diode capacitance Max. CD 120 pF REV:D Page 1 QW-BB020 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes RATING AND CHARACTERISTIC CURVES (CDBW120-G Thru. CDBW140-G) Fig.2 Maximum Non-Repetitive Peak Forward Surge Current Fig.1 Typical Forward Current Derating Curve 30 Peak Forward Surge Current (A) Average Forward Current (A) 2 1 0.5 Inductive or resistive load 0.375" (9.5mm) lead length 0 50 25 75 100 125 150 15 10 5 175 1 10 100 Case Temperature (°C) Number of Cycles at 60Hz Fig.3 Typical Instantaneous Forward Characteristics Fig.4 Typical Reverse Characteristics 100 100 Instantaneous Reverse Voltage (mA) Instantaneous Forward Current (A) 20 0 0 O TJ=125 C 10 O TJ=25 C 1 0.1 Pulse width=300μs 1% duty cycle 0.01 TJ=125 10 O 1.0 TJ=75 OC 0.1 O TJ=25 C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.8 20 40 60 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.5 Typical Junction Capacitance Fig.6 Typical Transient Thermal Impedance 100 100 Transient Thermal Impedance (°CW) 1000 O TJ=25 C f=1MHz Vsig=50mV Junction Capacitance (pF) 25 100 10 0.1 1 10 100 10 1 0.1 0.01 Reverse Voltage (V) 0.1 1 10 100 t-Pulse Duration (Sec.) REV:D Page 2 QW-BB020 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes Reel Taping Specification d P0 P1 T E Index hole F W B Polarity P C A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOD-123 SOD-123 SYMBOL A B C d D D1 D2 (mm) 1.90 ± 0.10 4.00 ± 0.10 1.50 ± 0.10 1.55 ± 0.10 178 ± 1.00 50.0 MIN. 13.0 ± 0.20 (inch) 0.075 ± 0.04 0.157 ± 0.04 0.059 ± 0.04 0.061 ± 0.04 7.00 ± 0.039 1.968 MIN. 0.512 ± 0.079 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 14.4 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 ± 0.011 0.567 MAX REV:D Page 3 QW-BB020 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes Marking Code Part Number Marking Code CDBW120-G SJ CDBW130-G SK CDBW140-G SL XX xx = Product type marking code Suggested PAD Layout SOD-123 SIZE D (mm) (inch) A 3.35 0.132 B 0.80 0.032 C 1.00 0.039 D 4.15 0.163 E 2.55 0.100 A E C B Standard Packaging REEL PACK Case Type SOD-123 REEL Reel Size ( pcs ) (inch) 3,000 7 REV:D Page 4 QW-BB020 Comchip Technology CO., LTD.