COMCHIP CPDVR083V3U

SMD ESD Protection Diode
CPDVR083V3U
RoHS Device
Features
-IEC61000-4-2 (ESD) ±15 kV(Contact),±20kV(Air).
-Working voltage: 3.3V
SOT-383F(VR8)
0.086(2.20)
0.079(2.00)
-Low leakage current.
-Low operating and clamping voltages.
Mechanical data
0.067(1.70)
0.059(1.50)
-Case: SOT-383F standard package,molded plastic.
-Terminals: Nipd, solderable per
MIL-STD-750,method 2026.
-Mounting position: Any
0.059(1.50)Typ.
Circuit Diagram
1
8
2
7
3
6
4
5
0.008(0.20) Typ.
0.024(0.60)
0.018(0.45)
0.012(0.30) Typ.
GND
Package
0.014(0.35) Typ.
8
7
6
Dimensions in inches and (millimeters)
5
GND
1
2
3
4
REV:B
Page 1
QW-BP027
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Value
Unit
Peak pulse power ( tp = 8/20 us)
PPP
40
W
Peak pulse current
IPP
5
A
ESD
±20
±15
kV
TJ
-55 to +125
°C
TSTG
-55 to +125
°C
Parameter
( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
Storage temperature
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Reverse stand-off voltage
Symbol Min Typ Max Unit
3.3
VRWM
V
Punch-through voltage
IPT = 2uA
VPT
3.5
V
Snap-back voltage
ISB = 50mA
VSB
2.8
V
Leakage current
VR = 3.3V
IL
IPP = 1 A, Tp=8/20us,
Any Channel Pin to Ground
0.5
uA
VC
5.5
V
IPP = 5 A, Tp=8/20us,
Any Channel Pin to Ground
VC
8.0
V
IPPR = 1 A, Tp=8/20us,
Ground to Any Channel Pin
VCR
2.4
V
VR = 0 V, f = 1MHz
Any Channel Pin to Ground
Cj
25
30
pF
VR = 3.3 V, f = 1MHz
Any Channel Pin to Ground
Cj
14
0.05
Clamping voltage
Reverse clamping voltage
Junction capacitance
pF
REV:B
Page 2
QW-BP027
Comchip Technology CO., LTD.
SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDVR083V3U)
Fig. 1 - Non-repetitive max. peak pulse power
vs. pulse time
Fig. 2 - Power rating derating curve
110
100
90
80
Power rating (%)
Max. peak pulse power-PPP(kW )
1
0.1
70
60
50
40
30
20
10
0.01
0
0.1
1
100
10
0
1000
25
50
75
100
Ambient temperature (
Pulse duration-tp(us)
Fig.3 - Clamping voltage vs.
peak pulse current
150
C)
Fig.4 - Forward voltage vs.
Forward current
16
12
Waveform
Parameters:
tr=8us
td=20us
14
10
12
Forward voltage (V)
Clamping voltage (V)
125
O
10
8
Waveform
Parameters:
tr=8us
td=20us
6
4
8
6
4
2
2
0
0
0
1
2
3
4
5
6
Peak pulse current(A)
0
1
2
3
4
5
6
Forward current(A)
Fig.5 - Junction capacitance vs.
reverse voltage
Normalized capacitance - Cj (pF)
30
f = 1MHz
25
Line-to-Gnd
20
15
Line-to-Line
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
Reverse voltage (V)
REV:B
Page 3
QW-BP027
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
C
P
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOT-383F
SOT-383F
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.96 ± 0.10
2.31 ± 0.10
0.74 ± 0.10
1.55 + 0.10
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.077 ± 0.004
0.091 ± 0.004
0.029 ± 0.004
0.061 + 0.004
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.22 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:B
Page 4
QW-BP027
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Marking Code
Part Number
Marking Code
CPDVR083V3U
E3V3
E3V3
Suggested PAD Layout
SOT-383F(VR8)
B
SIZE
(mm)
(inch)
A
0.630
0.025
B
0.300
0.012
C
0.500
0.020
D
0.450
0.018
E
2.150
0.085
F
1.800
0.071
C
D
E
A
F
Standard Packaging
REEL PACK
Case Type
SOT-383F
(VR8)
REEL
Reel Size
( pcs )
(inch)
3,000
7
REV:B
Page 5
QW-BP027
Comchip Technology CO., LTD.