COMCHIP CPDZ9V0U-HF

SMD ESD Protection Diode
CPDZ9V0U-HF
RoHS Device
Halogen Free
Features
0201/DFN0603
- Uni-directional ESD protection.
0.026(0.670)
0.022(0.570)
- High reliability.
- Designed for mounting on small surface.
0.015(0.370)
0.011(0.270)
- Extremely thin/leadless package.
Mechanical data
0.013(0.335)
0.010(0.265)
- Case: 0201/DFN0603 package,
molded plastic.
0.012(0.285)
0.008(0.215)
- Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
0.007(0.175)
0.004(0.105)
- Polarity: Color band denotes cathode end.
- Mounting position: Any
0.011(0.285)
0.008(0.215)
Circuit diagram
Dimensions in inches and (millimeter)
Maximum Rating AND Electrical Characteristics
(at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Reverse stand-off voltage
VRWM
9.0
V
14
V
Breakdown voltage
IR = 1mA
VBR
Forward voltage
I F = 10 mA
VF
1.0
V
Leakage current
VR = 9V
IL
1.0
uA
30
kV
30
kV
10
12
IEC 61000-4-2(air)
ESD capability
ESD
IEC 61000-4-2(contact)
IPP = 1A,TP=8/20us
Clamping voltage
IPP = 2A,TP=8/20us
15.0
VC
Peak pulse power
tp= 8/20
PPP
Junction capacitance
VR = 0V,f =1MHz
CT
Operation temperature
Storage temperature
V
17.5
35
W
pF
14
Tj
-55
150
°C
TSTG
-55
150
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 1
QW-JP026
Comchip Technology CO., LTD.
SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDZ9V0U-HF)
120%
Ta=25°C
Percentage of Ipp
100%
Test Waveform
parameters
tf=8us
td=20us
Peak Valur Ipp
e-t
80%
60%
40%
td= t Ipp/2
20%
Fig.2 - Current Derating Curve
Average Forward Current, (%)
Fig. 1 - 8/20us Peak Pulse Current
Waveform Acc. IEC 61000-4-5
80
60
40
20
0
0%
0
5
10
15
20
25
0
30
25
50
75
100
Fig.3 - Clamping Voltage vs.
Peak Pulse Current
Fig.4 - Capacitance of Diode
Capacitance of Diodes, ( P F)
19
18
17
16
15
8/20us waveform
14
1.0
1.5
2.0
150
O
Ambient temperature, ( C)
15
0.5
125
Time, (us)
20
Clamping Voltage,VC (V)
100
2.5
f = 1 MHz
Ta = 25°C
12
9
6
3
3.0
0
Peak Pulse Current,IPP (A)
3
6
9
Reverse voltage, (V)
Fig. 5 - Reverse Characteristics
Reverse Current, ( uA )
10.000
1.000
O
150 C
0.100
O
0.010
125 C
O
25 C
0.001
0.0001
0
2
4
6
8
10
Reverse Voltage, (V)
REV: B
Page 2
QW-JP026
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
F
B
A
W
C
P
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
0201
(DFN0603)
0201
(DFN0603)
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.39 +0.03/-0.02
0.72 ± 0.03
0.36 ± 0.03
1.50 + 0.10
178 ± 1.00
54.4 ± 0.40
13.0 ± 0.20
(inch)
0.015 +0.001/0.001
0.028 ± 0.001
0.014 ± 0.001
0.059 + 0.004
7.008 ± 0.039
2.142 ± 0.016
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
2.00 ± 0.05
4.00 ± 0.05
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.10
12.30 ± 0.10
(inch)
0.069 ± 0.004 0.138 ± 0.002 0.079 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 0.484 ± 0.004
REV: B
Page 3
QW-JP026
Comchip Technology CO., LTD.
Comchip
SMD ESD Protection Diode
SMD Diode Specialist
Marking Code
Part Number
Marking Code
CPDZ9V0U-HF
J
J
Suggested PAD Layout
0201(DFN0603)
SIZE
E
(mm)
(inch)
A
0.310
0.122
B
0.200
0.079
C
0.350
0.014
D
0.150
0.006
E
0.365
0.014
D
C
A
B
Standard Packaging
Case Type
0201(DFN0603)
Qty Per Reel
Reel Size
(Pcs)
(inch)
8,000
7
REV: B
QW-JP026
Page 4