SMD ESD Protection Diode CPDZ9V0U-HF RoHS Device Halogen Free Features 0201/DFN0603 - Uni-directional ESD protection. 0.026(0.670) 0.022(0.570) - High reliability. - Designed for mounting on small surface. 0.015(0.370) 0.011(0.270) - Extremely thin/leadless package. Mechanical data 0.013(0.335) 0.010(0.265) - Case: 0201/DFN0603 package, molded plastic. 0.012(0.285) 0.008(0.215) - Terminals: Gold plated, solderable per MIL-STD-750, method 2026. 0.007(0.175) 0.004(0.105) - Polarity: Color band denotes cathode end. - Mounting position: Any 0.011(0.285) 0.008(0.215) Circuit diagram Dimensions in inches and (millimeter) Maximum Rating AND Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Reverse stand-off voltage VRWM 9.0 V 14 V Breakdown voltage IR = 1mA VBR Forward voltage I F = 10 mA VF 1.0 V Leakage current VR = 9V IL 1.0 uA 30 kV 30 kV 10 12 IEC 61000-4-2(air) ESD capability ESD IEC 61000-4-2(contact) IPP = 1A,TP=8/20us Clamping voltage IPP = 2A,TP=8/20us 15.0 VC Peak pulse power tp= 8/20 PPP Junction capacitance VR = 0V,f =1MHz CT Operation temperature Storage temperature V 17.5 35 W pF 14 Tj -55 150 °C TSTG -55 150 °C Company reserves the right to improve product design , functions and reliability without notice. REV: B Page 1 QW-JP026 Comchip Technology CO., LTD. SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDZ9V0U-HF) 120% Ta=25°C Percentage of Ipp 100% Test Waveform parameters tf=8us td=20us Peak Valur Ipp e-t 80% 60% 40% td= t Ipp/2 20% Fig.2 - Current Derating Curve Average Forward Current, (%) Fig. 1 - 8/20us Peak Pulse Current Waveform Acc. IEC 61000-4-5 80 60 40 20 0 0% 0 5 10 15 20 25 0 30 25 50 75 100 Fig.3 - Clamping Voltage vs. Peak Pulse Current Fig.4 - Capacitance of Diode Capacitance of Diodes, ( P F) 19 18 17 16 15 8/20us waveform 14 1.0 1.5 2.0 150 O Ambient temperature, ( C) 15 0.5 125 Time, (us) 20 Clamping Voltage,VC (V) 100 2.5 f = 1 MHz Ta = 25°C 12 9 6 3 3.0 0 Peak Pulse Current,IPP (A) 3 6 9 Reverse voltage, (V) Fig. 5 - Reverse Characteristics Reverse Current, ( uA ) 10.000 1.000 O 150 C 0.100 O 0.010 125 C O 25 C 0.001 0.0001 0 2 4 6 8 10 Reverse Voltage, (V) REV: B Page 2 QW-JP026 Comchip Technology CO., LTD. SMD ESD Protection Diode Reel Taping Specification d P0 P1 T E F B A W C P 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed 0201 (DFN0603) 0201 (DFN0603) SYMBOL A B C d D D1 D2 (mm) 0.39 +0.03/-0.02 0.72 ± 0.03 0.36 ± 0.03 1.50 + 0.10 178 ± 1.00 54.4 ± 0.40 13.0 ± 0.20 (inch) 0.015 +0.001/0.001 0.028 ± 0.001 0.014 ± 0.001 0.059 + 0.004 7.008 ± 0.039 2.142 ± 0.016 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 2.00 ± 0.05 4.00 ± 0.05 2.00 ± 0.05 0.23 ± 0.05 8.00 ± 0.10 12.30 ± 0.10 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.079 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 0.484 ± 0.004 REV: B Page 3 QW-JP026 Comchip Technology CO., LTD. Comchip SMD ESD Protection Diode SMD Diode Specialist Marking Code Part Number Marking Code CPDZ9V0U-HF J J Suggested PAD Layout 0201(DFN0603) SIZE E (mm) (inch) A 0.310 0.122 B 0.200 0.079 C 0.350 0.014 D 0.150 0.006 E 0.365 0.014 D C A B Standard Packaging Case Type 0201(DFN0603) Qty Per Reel Reel Size (Pcs) (inch) 8,000 7 REV: B QW-JP026 Page 4