EOREX EM48AM3284LBB

EM48AM3284LBB
Revision History
Revision 0.1 (May. 2010)
First release.
Revision 0.2 (Sep. 2010)
Delete CL=2 parameters
Input Leakage Current = -2μA ~ +2μA
Change Supply Voltage Rating = -0.5 ~ +2.3
Delete Deep Power Down Mode
Change AC timing paramters: tRC & tIS
Revision 0.3 (Nov. 2010)
Change clock input capacitance value
Nov. 2010
www.eorex.com
1/22
EM48AM3284LBB
512Mb (4M×4Bank×32) Mobile Synchronous DRAM
Features
Description
• Fully Synchronous to Positive Clock Edge
• VDD= 1.7V~1.95V for 133MHz & 166MHz Power
Supply
• LVCMOS Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page
• Programmable CAS Latency (C/L) - 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• Special Function Support.
– PASR (Partial Array Self Refresh)
– Auto TCSR (Temperature Compensated Self
Refresh)
• Programmable Driver Strength Control
– Full Strength or 1/2, 1/4 of Full Strength
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms (7.8us)
The EM48AM3284LBB is Mobile Synchronous
Dynamic Random Access Memory (SDRAM)
organized as 4Meg words x 4 banks by 32 bits. All
inputs and outputs are synchronized with the
positive edge of the clock.
The 512Mb Mobile SDRAM uses synchronized
pipelined architecture to achieve high speed data
transfer rates and is designed to operate at 1.8V
low power memory system. It also provides auto
refresh with power saving / down mode. All inputs
and outputs voltage levels are compatible with
LVCMOS.
Available packages:
90Ball-FBGA (8mmx13mm)
Ordering Information
Part No
Package
Size
Package
Type
Organize
EM48AM3284LBB-75F
EM48AM3284LBB-75FE
EM48AM3284LBB-6F
Max. Freq
133MHz @CL3
(8x13)mm
BGA-90B
16M X 32
166MHz @CL3
EM48AM3284LBB-6FE
Nov. 2010
Grade
Pb
Commercial
Extend temp.
Commercial
Free
Extend temp.
www.eorex.com
2/22
EM48AM3284LBB
Parts Naming Rule
z
EOREX reserves the right to change products or specification without notice.
Nov. 2010
www.eorex.com
3/22
EM48AM3284LBB
Pin Assignment
1
2
3
7
8
9
DQ26
DQ24
VSS
A
VDD
DQ23
DQ21
DQ28
VDDQ
VSSQ
B
VDDQ
VSSQ
DQ19
VSSQ
DQ27
DQ25
C
DQ22
DQ20
VDDQ
VSSQ
DQ29
DQ30
D
DQ17
DQ18
VDDQ
VDDQ
DQ31
NC
E
NC
DQ16
VSSQ
VSS
DQM3
A3
F
A2
DQM2
VDD
A4
A5
A6
G
A10
A0
A1
A7
A8
A12
H
NC
BA1
A11
CLK
CKE
A9
J
BA0
/CS
/RAS
DQM1
NC
NC
K
/CAS
/WE
DQM0
VDDQ
DQ8
VSS
L
VDD
DQ7
VSSQ
VSSQ
DQ10
DQ9
M
DQ6
DQ5
VDDQ
VSSQ
DQ12
DQ14
N
DQ1
DQ3
VDDQ
DQ11
VDDQ
VSSQ
P
VDDQ
VSSQ
DQ4
DQ13
DQ15
VSS
R
VDD
DQ0
DQ2
90ball FBGA / (8mm x 13mm)
Nov. 2010
www.eorex.com
4/22
EM48AM3284LBB
Pin Description (Simplified)
Pin
Name
Function
J1
CLK
J8
/CS
J2
CKE
G8,G9,F7,F3,G1,
G2,G3,H1,H2,J3,
G7,H9,H3
A0~A12
J7,H8
BA0,BA1
J9
/RAS
K7
/CAS
K8
/WE
K9,K1,F8,F2
DQM0~DQM3
(System Clock)
Master clock input (Active on the positive rising edge)
(Chip Select)
Selects chip when active
(Clock Enable)
Activates the CLK when “H” and deactivates when “L”.
CKE should be enabled at least one cycle prior to new
command. Disable input buffers for power down in standby.
(Address)
Row address (A0 to A12) is determined by A0 to A12 level at
the bank active command cycle CLK rising edge.
CA (CA0 to CA8) is determined by A0 to A8 level at the read or
write command cycle CLK rising edge.
And this column address becomes burst access start address.
A10 defines the pre-charge mode. When A10= High at the
pre-charge command cycle, all banks are pre-charged.
But when A10= Low at the pre-charge command cycle, only the
bank that is selected by BA is pre-charged.
(Bank Address)
Selects which bank is to be active.
(Row Address Strobe)
Latches Row Addresses on the positive rising edge of the CLK
with /RAS “L”. Enables row access & pre-charge.
(Column Address Strobe)
Latches Column Addresses on the positive rising edge of the
CLK with /CAS low. Enables column access.
(Write Enable)
Latches Column Addresses on the positive rising edge of the
CLK with /CAS low. Enables column access.
(Data Input/Output Mask)
DQM controls I/O buffers.
R8,N7,R9,N8,P9,
M8,M7,L8,L2,M3,
M2,P1,N2,R1,N3,
R2,E8,D7,D8,B9,
C8,A9,C7,A8,A2,
C3,A1,C2,B1,D2,
D3,E2
A7,F9,L7,R7/
A3,F1,L3,R3
B2,B7,C9,D9,E1,
L1,M9,N9,P2/B8,
B3,C1,D1,E9,L9,
M1,N1,P8
E3,E7,H7,K2,
K3
DQ0~DQ31
VDD/VSS
VDDQ/VSSQ
NC
(Data Input/Output)
DQ pins have the same function as I/O pins on a conventional
DRAM.
(Power Supply/Ground)
VDD and VSS are power supply pins for internal circuits.
(Power Supply/Ground)
VDDQ and VSSQ are power supply pins for the output buffers.
(No Connection)
This pin is recommended to be left No Connection on the
device.
Nov. 2010
www.eorex.com
5/22
EM48AM3284LBB
Absolute Maximum Rating
Symbol
Item
Rating
Units
VIN, VOUT
Input, Output Voltage
-0.5 ~ +2.3
V
VDD, VDDQ
Power Supply Voltage
-0.5 ~ +2.3
Commercial
0 ~ +70
Extended
-25 ~ +85
-55 ~ +125
V
°C
1
W
TOP
Operating Temperature Range
TSTG
Storage Temperature Range
PD
Power Dissipation
°C
IOS
Short Circuit Current
50
mA
Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Capacitance (VCC=1.7V~1.95V, f=1MHz, TA=25°C)
Symbol
Parameter
Min.
CCLK
Clock Capacitance
Input Capacitance for CLK, CKE, Address,
/CS, /RAS, /CAS, /WE, DQML, DQMU
Input/Output Capacitance
CI
CO
Typ.
Max.
Units
1.5
3.5
pF
1.5
3.0
pF
2.0
4.5
pF
Recommended DC Operating Conditions (TA=-25°C ~85°C)
Symbol
VDD
VDDQ
VIH
Parameter
Note
Power Supply Voltage
Power Supply Voltage (for I/O Buffer)
Input Logic High Voltage
VIL
Input Logic Low Voltage
Note: * All voltages referred to VSS.
Nov. 2010
Min.
Typ.
Max.
Units
1.7
1.8
1.95
V
1.7
1.8
1.95
V
0.8*VDDQ
VDDQ+0.3
V
-0.3
0.3
V
www.eorex.com
6/22
EM48AM3284LBB
Recommended DC Operating Conditions
(VDD=1.7~1.95V, TA=-25°C ~85°Cfor extended)
Symbol
(Note 1)
Operating Current
ICC2P
Precharge Standby Current in
Power Down Mode
ICC2N
Precharge Standby Current in
Non-power Down Mode
ICC2NS
ICC3P
ICC3PS
ICC3N
Speed
-7.5
Units
70
65
mA
1
1
mA
1
1
mA
5
5
mA
2
2
mA
3
3
mA
3
3
mA
15
15
mA
10
10
mA
tCCD≥2CLKs, IOL=0mA
130
110
mA
tRC≥tRC(min.)
90
90
mA
CKE≤ 0.2, Full Array, Internal
TCSR = 85°C
0.6
0.6
mA
Test Conditions
ICC1
ICC2PS
Speed
-6
Parameter
Active Standby Current in Power
Down Mode
Active Standby Current in
Non-power Down Mode
ICC3NS
Operating Current (Burst Mode)
ICC4
(Note 2)
ICC5
Refresh Current
ICC6
Slef Refresh Current
(Note 3)
Burst length=1,
tRC≥tRC(min.), IOL=0mA,
One bank active
CKE≤VIL(max.), tCK=15ns
CKE≤VIL(max.), tCK= ∞
CKE≥VIL(min.), tCK=15ns,
/CS≥VIH(min.)
Input signals are changed one
time during 30ns
CKE≥VIL(min.), tCK= ∞ ,
Input signals are stable
CKE≤VIL(max.), tCK=15ns
CKE≤VIL(max.), tCK= ∞
CKE≥VIL(min.), tCK=15ns,
/CS≥VIH(min.)
Input signals are changed one
time during 30ns
CKE≥VIL(min.), tCK= ∞ ,
Input signals are stable
*All voltages referenced to VSS.
Note 1: ICC1 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 2: ICC4 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 3: Input signals are changed only one time during tCK (min.)
Recommended DC Operating Conditions (Continued)
Symbol
Parameter
Test Conditions
IIL
Input Leakage Current
IOL
Output Leakage Current
0≤VI≤VDDQ, VDDQ=VDD
All other pins not under test=0V
0≤VO≤VDDQ, DOUT is disabled
VOH
High Level Output Voltage
IO=-0.1mA
VOL
Low Level Output Voltage
IO=+0.1mA
Min.
Typ.
Max.
Units
-2
+2
uA
-1.5
+1.5
uA
VDDQ-0.2
V
0.2
Nov. 2010
V
www.eorex.com
7/22
EM48AM3284LBB
Block Diagram
Auto/Self
Refresh Counter
A0
A1
DQM
A2
A3
A4
Memory
Array
A5
A6
Write DQM
Control
A7
A8
Data In
A9
DOi
S/A & I/O Gating
A10
A11
Data Out
Col. Decoder
A12
BA0
BA1
Col. Add. Buffer
Read DQM
Control
Mode Register Set
Col. Add. Counter
Burst Counter
Timing Register
CLK
CKE
/CS
/RAS
/CAS
Nov. 2010
/WE
DQM
www.eorex.com
8/22
EM48AM3284LBB
AC Operating Test Conditions
(VDD=1.7~1.95V, TA=-25°C ~85°C)
Item
Conditions
Output Reference Level
0.5*VDDQ
Output Load
See diagram as below
Input Signal Level
0.9*VDDQ/0.2
Transition Time of Input Signals
1ns/1ns
Input Reference Level
0.5*VDDQ
AC Operating Test Characteristics
(VDD=1.7~1.95V, TA=-25°C ~85°C for extended)
Symbol
-6
Parameter
Min.
6
Max.
-7.5
Min. Max.
7.5
Units
tCK
Clock Cycle Time
CL=3
tAC
Access Time form CLK
CL=3
tCH
CLK High Level Width
2
2.5
ns
tCL
CLK Low Level Width
2
2.5
ns
tOH
Data-out Hold Time
2.5
3
ns
tHZ
tLZ
CL=3
Data-out High Impedance
Data-out Low Impedance Time
1
1
ns
tIH
Input Hold Time
1
1
ns
tIS
Input Setup Time
1.9
1.9
ns
CL=3
5.4
6
5.4
6
ns
ns
ns
* All voltages referenced to VSS.
Note 5: tHZ defines the time at which the output achieve the open circuit condition and is not referenced to
output voltage levels.
Nov. 2010
www.eorex.com
9/22
EM48AM3284LBB
AC Operating Test Characteristics (Continued)
(VDD=1.7~1.95V, TA=-25°C ~85°C for extended)
Symbol
tRC
tRAS
tRP
tRCD
tRRD
Parameter
ACTIVE to ACTIVE Command
(Note 6)
Period
ACTIVE to PRECHARGE
(Note 6)
Command Period
PRECHARGE to ACTIVE
(Note 6)
Command Period
ACTIVE to READ/WRITE Delay
(Note 6)
Time
ACTIVE(one) to ACTIVE(another)
(Note 6)
Command
-6
Min.
Max.
90
42
-7.5
Min. Max.
90
100k
45
Units
ns
100k
ns
18
22.5
ns
18
22.5
ns
12
15
ns
tCCD
READ/WRITE Command to
READ/WRITE Command
1
1
CLK
tDPL
Date-in to PRECHARGE
Command
2
2
CLK
tBDL
1
1
CLK
3
3
CLK
tREF
Date-in to BURST Stop Command
Data-out to High
CL=3
Impedance from
PRECHARGE Command
Refresh Time (8,192 cycle)
tDAL
Data-in to ACTIVE command
33
tROH
64
64
37.5
Ms
ns
* All voltages referenced to VSS.
Note 6: These parameters account for the number of clock cycles and depend on the operating frequency of
the clock, as follows:
The number of clock cycles = Specified value of timing/clock period (Count Fractions as a whole
number)
Recommended Power On and Initialization
The following power on and initialization sequence guarantees the device is preconditioned to each user’s
specific needs. (Like a conventional DRAM) During power on, all VDD and VDDQ pins must be built up
simultaneously to the specified voltage when the input signals are held in the “NOP” state. The power on
voltage must not exceed VDD+0.3V on any of the input pins or VDD supplies. (CLK signal started at same time)
After power on, an initial pause of 200 µs is required followed by a precharge of all banks using the precharge
command.
To prevent data contention on the DQ bus during power on, it is required that the DQM and CKE pins be held
high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command
must be issued to initialize the Mode Register. A minimum of eight Auto Refresh cycles (CBR) are also required,
and these may be done before or after programming the Mode Register.
Nov. 2010
www.eorex.com
10/22
EM48AM3284LBB
Ex
it
SE
LF
SE
LF
Simplified State Diagram
E
CK
PR
E
ite
w
Wr
T
BS ad
e
R
h
wit
ad
Re
ith
E
CK
E
PR
Nov. 2010
www.eorex.com
11/22
EM48AM3284LBB
Address Input for Mode Register Set
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
Operation Mode
A5
A4
A3
CAS Latency
A2
BT
A1
A0
Burst Length
Burst Length
BA1
BA0
A12
A11
Sequential
Interleave
A2
A1
A0
1
1
0
0
0
2
2
0
0
1
4
4
0
1
0
8
8
0
1
1
Reserved
Reserved
1
0
0
Reserved
Reserved
1
0
1
Reserved
Reserved
1
1
0
Full Page
Reserved
1
1
1
Burst Type
A3
Interleave
1
Sequential
0
CAS Latency
A6
A5
A4
Reserved
0
0
0
Reserved
0
0
1
Reserved
0
1
0
3
0
1
1
Reserved
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
A10
A9
A8
A7
Operation Mode
0
0
0
0
0
0
0
0
Normal
0
0
0
0
0
1
0
0
Burst Read with Single-bit Write
Nov. 2010
www.eorex.com
12/22
EM48AM3284LBB
Burst Type (A3)
Burst Length
2
4
8
A2
A1
A0
Sequential Addressing
Interleave Addressing
X
X
0
01
01
X
X
0
10
10
X
0
0
0123
0123
X
0
1
1230
1032
X
1
0
2301
2301
X
1
1
3012
3210
0
0
0
01234567
01234567
0
0
1
12345670
10325476
0
1
0
23456701
23016745
0
1
1
34567012
32107654
1
0
0
45670123
45670123
1
0
1
56701234
54761032
1
1
0
67012345
67452301
1
1
1
70123456
76543210
Full Page*
n
n
n
Cn Cn+1 Cn+2……
* Page length is a function of I/O organization and column addressing ×32 (CA0 ~ CA8):
Full page = 512bits
Nov. 2010
-
www.eorex.com
13/22
EM48AM3284LBB
Extended Mode Register Set ( EMRS )
The Extended mode register is written by asserting low on /CS, /RAS, /CAS, /WE and high on BA1 ( The
SDRAM should be in all bank precharge with CKE already prior to writing into the extended mode register. ) The
state of address pins A0-A10 and BA1 in the same cycle as /CS, /RAS, /CAS, and /WE going low is written in the
extended mode register. The mode register contents can be changed using the same command and clock cycle
requirements during operation as long as all banks are in the idle state.
BA1
BA0
A11
A10
A9
A8
A7
1
0
0
0
0
0
0
A6
A5
DS
0
0
0
Two Banks (BA1=0)
0
0
1
One Bank (BA0=BA1=0)
0
1
0
Reserved
0
1
1
Reserved
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
0
1/2 Strength
0
1
1/4 Strength
1
0
Reserved
1
1
EMRS
Nov. 2010
PASR
All Banks
0
1
A0
A0
full
Normal
0
A1
A1
A5
0
0
A2
A2
A6
MRS
A3
Self Refresh Coverage
Driver Strength
BA1
A4
www.eorex.com
14/22
EM48AM3284LBB
Output Drive Strength
The normal drive strength got all outputs is specified to be LV-CMOS. By setting EMRS specific parameter on A6
and A5, driving capability of data output drivers is selected.
Partial Array Self Refresh
In EMRS setting A0~A2, memory array size to be refreshed during self-refresh operation is programmable in
order to reduce power. Data outside the defined area will not be retained during self-refresh.
Auto Temperature Compensated Self Refresh (ATCSR)
In EMRS setting A9=0 , With the built-in temperature sensor, the internal self refresh frequency is controlled
autonomously..
Nov. 2010
www.eorex.com
15/22
EM48AM3284LBB
1. Command Truth Table
Command
Symbol
CKE
n-1 n
H X
/CS
/RAS
/CAS
/WE
BA0,
BA1
A10
A11,
A9~A10
H
X
X
X
X
X
X
Ignore Command
DESL
No Operation
NOP
H
X
L
H
H
H
X
X
X
Burst Stop
BSTH
H
X
L
H
H
L
X
X
X
Read
READ
H
X
L
H
L
H
V
L
V
READA
H
X
L
H
L
H
V
H
V
Write
WRIT
H
X
L
H
L
L
V
L
V
Write with Auto Pre-charge
WRITA
H
X
L
L
H
H
V
H
V
Read with Auto Pre-charge
Bank Activate
ACT
H
X
L
L
H
H
V
V
V
Pre-charge Select Bank
PRE
H
X
L
L
H
L
V
L
X
Pre-charge All Banks
PALL
H
X
L
L
H
L
X
H
X
L
V
Mode Register Set
MRS
H X
L
L
L
L
L
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
Nov. 2010
www.eorex.com
16/22
EM48AM3284LBB
2. DQM Truth Table
Command
CKE
Symbol
n-1
n
/CS
Data Write/Output Enable
ENB
H
X
H
Data Mask/Output Disable
MASK
H
X
L
Upper Byte Write Enable/Output Enable
BSTH
H
X
L
Read
READ
H
X
L
READA
H
X
L
Write
WRIT
H
X
L
Write with Auto Pre-charge
WRITA
H
X
L
Bank Activate
ACT
H
X
L
Pre-charge Select Bank
PRE
H
X
L
Pre-charge All Banks
PALL
H
X
Read with Auto Pre-charge
L
Mode Register Set
MRS
H
X
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
L
3. CKE Truth Table
Item
Activating
Any
Clock
Suspend
Idle
Command
Symbol
Clock Suspend Mode Entry
Clock Suspend Mode
Clock Suspend Mode Exit
CKE
n-1 n
H
L
L
L
/CS
/RAS
/CAS
/WE
Addr.
X
X
X
X
X
X
X
X
X
X
L
H
X
X
X
X
X
CBR Refresh Command
REF
H
H
L
L
L
H
X
Idle
Self Refresh Entry
SELF
L
L
L
L
H
X
Self Refresh
Self Refresh Exit
H
L
H
L
H
H
H
X
L
H
H
X
X
X
X
Idle
Power Down Entry
H
L
X
X
X
X
X
X
X
X
X
Power Down
Power Down Exit
L
H
X
Remark H = High level, L = Low level, X = High or Low level (Don't care)
Nov. 2010
www.eorex.com
17/22
EM48AM3284LBB
4. Operative Command Table (Note 7)
Current
State
Idle
Row
Active
Read
/CS
/R
/C
/W
Addr.
Command
Action
H
X
X
X
X
DESL
Nop or power down
(Note 8)
L
H
H
X
X
NOP or BST
Nop or power down
(Note 8)
L
H
L
H
BA/CA/A10
READ/READA
ILLEGAL
L
L
L
H
L
L
L
H
H
L
H
L
BA/CA/A10
BA/RA
BA, A10
WRIT/WRITA
ACT
PRE/PALL
L
L
L
H
X
REF/SELF
ILLEGAL
Row activating
Nop
Refresh or self refresh
L
H
L
L
L
X
H
H
L
X
H
L
L
X
X
H
Op-Code
X
X
BA/CA/A10
MRS
DESL
NOP or BST
READ/READA
Mode register accessing
Nop
Nop
(Note 11)
Begin read: Determine AP
L
H
L
L
BA/CA/A10
WRIT/WRITA
Begin write: Determine AP
(Note 9)
(Note 9)
(Note 9)
(Note 10)
(Note 11)
L
L
H
H
BA/RA
ACT
L
L
H
L
BA, A10
PRE/PALL
Pre-charge
L
L
H
L
L
L
L
X
H
H
L
L
X
H
H
H
L
X
H
L
X
Op-Code
X
X
X
REF/SELF
MRS
DESL
NOP
BST
L
H
L
H
BA/CA/A10
READ/READA
ILLEGAL
ILLEGAL
Continue burst to end → Row active
Continue burst to end → Row active
Burst stop → Row active
Terminate burst, new read:
(Note 13)
Determine AP
L
L
L
L
BA/CA/A10
WRIT/WRITA
L
L
H
H
BA/RA
ACT
L
L
H
L
BA, A10
PRE/PALL
L
L
L
L
L
L
H
L
X
Op-Code
REF/SELF
MRS
H
X
X
X
X
DESL
L
H
H
H
X
NOP
L
H
H
L
X
BST
L
H
L
H
BA/CA/A10
READ/READA
L
L
L
L
BA/CA/A10
WRIT/WRITA
L
L
H
H
BA/RA
ACT
L
L
H
L
BA, A10
PRE/PALL
Write
ILLEGAL
(Note 12)
(Note 10)
Terminate burst, start write:
(Note 13, 14)
Determine AP
ILLEGAL
(Note 9)
Terminate burst, pre-charging
(Note 10)
ILLEGAL
ILLEGAL
Continue burst to end → Write
recovering
Continue burst to end → Write
recovering
Burst stop → Row active
Terminate burst, start read:
(Note 13, 14)
Determine AP 7, 8
Terminate burst, new write:
(Note 13)
Determine AP 7
ILLEGAL
(Note 9)
Terminate burst, pre-charging
(Note 15)
ILLEGAL
ILLEGAL
Remark H = High level, L = Low level, X = High or Low level (Don't care)
L
L
L
L
L
L
H
L
X
Op-Code
REF/SELF
MRS
Nov. 2010
www.eorex.com
18/22
EM48AM3284LBB
4. Operative Command Table (Continued) (Note 7)
Current
State
Read with
AP
Write with
AP
Pre-charging
Row
Activating
/CS
/R
/C
/W
Addr.
Command
Action
H
X
X
X
X
DESL
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA/CA/A10
BST
READ/READA
Continue burst to end →
Pre-charging
Continue burst to end →
Pre-charging
ILLEGAL
(Note 9)
ILLEGAL
L
H
L
L
BA/CA/A10
WRIT/WRITA
ILLEGAL
(Note 9)
L
L
H
H
BA/RA
ACT
ILLEGAL
(Note 9)
L
L
L
L
L
L
H
L
L
L
H
L
BA, A10
X
Op-Code
PRE/PALL
REF/SELF
MRS
H
X
X
X
X
DESL
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA/CA/A10
BST
READ/READA
ILLEGAL
ILLEGAL
ILLEGAL
Burst to end → Write recovering
with auto pre-charge
Continue burst to end → Write
recovering with auto pre-charge
ILLEGAL
(Note 9)
ILLEGAL
L
H
L
L
BA/CA/A10
WRIT/WRITA
ILLEGAL
(Note 9)
L
L
H
H
BA/RA
ACT
ILLEGAL
(Note 9)
L
L
L
H
L
L
L
L
L
L
X
H
H
H
H
L
L
X
H
H
L
L
H
L
X
H
L
H
BA, A10
X
Op-Code
X
X
X
BA/CA/A10
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
ILLEGAL
ILLEGAL
ILLEGAL
Nop → Enter idle after tRP
Nop → Enter idle after tRP
ILLEGAL
(Note 9)
ILLEGAL
L
H
L
L
BA/CA/A10
WRIT/WRITA
ILLEGAL
L
L
L
L
H
L
L
L
L
L
L
L
X
H
H
H
H
H
L
L
X
H
H
L
H
L
H
L
X
H
L
H
BA/RA
BA, A10
X
Op-Code
X
X
X
BA/CA/A10
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
ILLEGAL
Nop → Enter idle after tRP
ILLEGAL
ILLEGAL
Nop → Enter idle after tRCD
Nop → Enter idle after tRCD
ILLEGAL
(Note 9)
ILLEGAL
L
H
L
L
BA/CA/A10
WRIT/WRITA
ILLEGAL
(Note 9)
L
L
H
H
BA/RA
ACT
ILLEGAL
(Note 9, 16)
L
L
L
L
L
L
H
L
L
L
H
L
BA, A10
X
Op-Code
PRE/PALL
REF/SELF
MRS
(Note 9)
(Note 9)
(Note 9)
(Note 9)
(Note 9)
ILLEGAL
ILLEGAL
ILLEGAL
Remark H = High level, L = Low level, X = High or Low level (Don't care), AP = Auto Pre-charge
Nov. 2010
www.eorex.com
19/22
EM48AM3284LBB
4. Operative Command Table (Continued) (Note 7)
Current
State
Write
Recovering
Write
Recovering
with AP
Refreshing
Mode
Register
Accessing
/CS
/R
/C
/W
Addr.
Command
Action
H
L
L
L
L
X
H
H
H
H
X
H
H
L
L
X
H
L
H
L
X
X
X
BA/CA/A10
BA/CA/A10
DESL
NOP
BST
READ/READA
WRIT/WRITA
Nop → Enter row active after tDPL
Nop → Enter row active after tDPL
Nop → Enter row active after tDPL
Start read, Determine AP
(Note 14)
New write, Determine AP
L
L
H
H
BA/RA
ACT
L
L
L
H
L
L
L
L
L
L
X
H
H
H
H
L
L
X
H
H
L
L
H
L
X
H
L
H
BA, A10
X
Op-Code
X
X
X
BA/CA/A10
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
ILLEGAL
ILLEGAL
ILLEGAL
Nop → Enter pre-charge after tDPL
Nop → Enter pre-charge after tDPL
Nop → Enter pre-charge after tDPL
(Note 9, 14)
ILLEGAL
L
H
L
L
BA/CA/A10
WRIT/WRITA
ILLEGAL
L
L
L
L
H
L
L
L
L
H
L
L
L
L
L
L
L
X
H
H
L
L
X
H
H
H
H
H
L
L
X
H
L
H
L
X
H
H
L
H
L
H
L
X
X
X
X
X
X
H
L
X
BA/RA
BA, A10
X
Op-Code
X
X
X
X
X
X
X
X
X
L
L
X
X
X
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP/BST
READ/WRIT
ACT/PRE/PALL
REF/SELF/MRS
DESL
NOP
BST
READ/WRIT
ACT/PRE/PALL/
REF/SELF/MRS
ILLEGAL
(Note 9)
(Note 9)
(Note 9)
(Note 9)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Nop → Enter idle after tRC
Nop → Enter idle after tRC
ILLEGAL
ILLEGAL
ILLEGAL
Nop
Nop
ILLEGAL
ILLEGAL
ILLEGAL
Remark H = High level, L = Low level, X = High or Low level (Don't care), AP = Auto Pre-charge
Note 7: All entries assume that CKE was active (High level) during the preceding clock cycle.
Note 8: If all banks are idle, and CKE is inactive (Low level), SDRAM will enter Power down mode.
All input buffers except CKE will be disabled.
Note 9: Illegal to bank in specified states;
Function may be legal in the bank indicated by Bank Address (BA), depending on the state of
that bank.
Note 10: If all banks are idle, and CKE is inactive (Low level), SDRAM will enter Self refresh mode.
All input buffers except CKE will be disabled.
Note 11: Illegal if tRCD is not satisfied.
Note 12: Illegal if tRAS is not satisfied.
Note 13: Must satisfy burst interrupt condition.
Note 14: Must satisfy bus contention, bus turn around, and/or write recovery requirements.
Note 15: Must mask preceding data which don't satisfy tDPL.
Note 16: Illegal if tRRD is not satisfied.
Nov. 2010
www.eorex.com
20/22
EM48AM3284LBB
5. Command Truth Table for CKE
Current State
Self Refresh
Self Refresh
Recovery
Power Down
Both Banks
Idle
CKE
n-1
n
Any State Other
than Listed above
/R
/C
/W
Addr.
H
X
X
X
X
X
X
L
L
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
L
L
L
L
H
L
L
L
X
H
L
L
L
H
L
L
L
X
H
H
L
X
X
H
H
L
X
H
H
L
X
H
L
X
X
X
H
L
X
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
L
L
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
H
L
L
L
L
X
X
H
L
L
L
L
H
L
L
L
X
X
X
H
L
L
L
X
H
L
L
X
X
X
X
H
L
L
X
X
H
L
X
X
X
X
X
H
L
X
X
X
H
X
X
L
L
L
L
Op-Code
H
Row Active
/CS
L
Action
INVALID, CLK(n-1) would exit self
refresh
Self refresh recovery
Self refresh recovery
ILLEGAL
ILLEGAL
Maintain self refresh
Idle after tRC
Idle after tRC
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
INVALID, CLK(n-1) would exit
power down
Exit power down → Idle
Maintain power down mode
Refer to operations in Operative
Command Table
X
Op-Code
Refresh
Refer to operations in Operative
Command Table
X
L
X
X
X
X
X
X
H
X
X
X
X
X
X
L
X
X
X
X
X
X
H
H
X
X
X
X
H
L
X
X
X
X
X
(Note 17)
Self refresh
Refer to operations in Operative
Command Table
(Note 17)
Power down
Refer to operations in Operative
Command Table
(Note 17)
Power down
Refer to operations in Operative
Command Table
Begin clock suspend next cycle
(Note 18)
Exit clock suspend next cycle
Maintain clock suspend
Remark: H = High level, L = Low level, X = High or Low level (Don't care)
Notes 17: Self refresh can be entered only from the both banks idle state.
Power down can be entered only from both banks idle or row active state.
Notes 18: Must be legal command as defined in Operative Command Table
L
L
H
L
X
X
X
X
X
X
X
X
Nov. 2010
X
X
www.eorex.com
21/22
EM48AM3284LBB
Package Description (8mm x 13mm)
90Ball-FBGA
Unit: mm
6.40
A1
9
8
7
6
5
4
3
2
1
A
0.80
B
C
D
E
F
G
11.2 ± 0.1
13.0 ± 0.1
H
J
K
L
5.6 ± 0.05
6.5 ± 0.05
M
N
P
R
4.0 ± 0.05
3.2 ± 0.05
8.0 ± 0.1
0.58 ± 0.09
1.0 MAX
0.45 ± 0.05
Nov. 2010
0.1 MAX
www.eorex.com
22/22