1A1 – 1A7 星合电子 1.0A MINIATURE SILICON RECTIFIER ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! C Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.181 grams (approx.) Mounting Position: Any Marking: Type Number D R-1 Dim Min Max A 20.0 — B 2.00 3.50 C 0.53 0.64 D 2.20 2.60 All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C Symbol 1A1 1A2 1A3 1A4 1A5 1A6 1A7 Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 1.0 V @TA = 25°C @TA = 100°C IRM 5.0 50 µA Cj 15 pF RJA 50 K/W Tj -65 to +125 °C TSTG -65 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient (Note 1) Operating Temperature Range Storage Temperature Range *Glass passivated forms are available upon request Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C. ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ 1A1 – 1A7 星合电子 1.0A MINIATURE SILICON RECTIFIER 1.0 10 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A) ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ 0.8 0.6 0.4 0.2 0 40 60 80 100 120 140 160 1.0 0.1 Tj = 25ºC PULSE WIDTH = 300µs 2% DUTY CYCLE 0.01 0.6 180 0.8 1.0 1.2 1.4 1.6 TA, AMBIENT TEMPERATURE (ºC) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Characteristics 100 50 f = 1MHz 40 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) Tj = 25ºC 30 20 10 10 8.3ms Single half sine-wave JEDEC Method 0 1.0 1.0 10 100 1.0 10 NUMBER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V) Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Fig. 4 Typical Junction Capacitance ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ 100