KBU801 THRU KBU807 KI SEMICONDUCTOR Features • • • • 8 Amp Single Phase Low Forward Voltage Drop Ideal For Printer Circuit Boards High Current Capability and High Reliability High Surge Current Capability Bridge Rectifier 50 to 1000 Volts Maximum Ratings • • KBU A Operating Temperature: -50°C to +150°C Storage Temperature: -50°C to +150°C Catalog Number KBU801 KBU802 KBU803 KBU804 KBU805 KBU806 KBU807 Device Marking KBU8A KBU8B KBU8D KBU8G KBU8J KBU8K KBU8M Maximum Reccurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 140V 280V 420V 560V 700V D E Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V B C AC - + F Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current (NOTE 1,2 ) Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage IF(AV) 8A IFSM 200A VF 1.0V G Tc = 100°C 8.3ms, half sine J K L DIMENSIONS TC = 25°C IR 10 µA 300mA TC = 25°C TC = 100°C DIM A B C D E F G J K L INCHES MIN .895 .600 .740 .15∅ x --.100 .048 .268 --.180 MAX .935 .700 .780 .23L .300 -.052 .280 .140 .220 MM MIN 22.7 16.8 18.8 3.8∅ x --25.4 1.2 6.8 --4.6 MAX 23.7 17.8 19.8 5.7L 7.5 --1.3 7.1 5.3 5.6 NOTE NOM HOLE NOM NOM 3PL *Pulse Test: Pulse Width 300µsec, Duty Cycle 2% KI SEMICONDUCTOR KBU801 thru KBU807 Figure 1 Typical Forward Characteristics Figure 2 Typical Reverse Characteristics 100 10 TC=100°C 10 1.0 µAmps Amps TC=25°C 0.1 1.0 TC=25°C 0.1 0.6 0.01 1.0 0.8 1.2 0 40 80 120 Volts Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts Instantaneous Reverse Leakage Current - MicroAmperesversus Percent Of Rated Peak Reverse Voltage - Volts Figure 3 Forward Derating Curve 12 10 8 Amps 6 4 2 0 0 25 50 75 100 125 150 °C Average Forward Rectified Current - Amperesversus Ambient Temperature - °C KI SEMICONDUCTOR