1N5059-1N5062 Plastic Silicon Rectifier VOLTAGE RANGE: 200---800 V CURRENT: 2.0 A Features DO - 15 Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand and s im ilar s olvents Mechanical Data Cas e: JEDEC DO-15, m olded plas tic Term inals : Axial leads ,s olderable per MIL-STD -202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces , 0.39gram s Mounting: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%. 1N5059 1N5060 1N5061 1N5062 UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage V RMS 140 280 420 560 V Maximum DC blocking voltage V DC 200 400 600 800 V Maximum average forw ard rectif ied current 9.5mm lead length, @TA =50 IF(AV) 2.0 A IFSM 50.0 A VF 1.2 1.15 5.0 Peak f orw ard surge current 10ms single half -sine-w ave @TJ =125 superimposed on rated load Maximum instantaneous forw ard voltage Maximum reverse current @1.0A @ 2.5A @TA =25 at rated DC blocking voltage @TA =150 IR 100 V A Maximum reverse recovery time (Note1) t rr 4.0 µs Typical junction capacitance (Note2) CJ 40 pF Typical thermal resistance (Note3) RθJA 45 K/W TJ - 55 ----- + 175 TSTG - 55 ----- + 175 Operating junction temperature range Storage temperature range NOTE: 1.Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 0V DC. 3. Thermal resistance from junction to ambient. http://www.luguang.cn mail:[email protected] 1N5059-1N5062 Plastic Silicon Rectifier Ratings AND Charactieristic Curves FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10 N 1. 50 N 1. +0.5A 0 D.U.T. (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE1) 1 NONINDUCTIVE -0.25A PULSE GENERATOR (NOTE2) -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIMEBASEFOR 2.0 µ s/cm AVERAGE FORWARD RECTIFIED CURRENT AMPERES FIG.3 -- FORWARD DERATING CURVE 20 10 T J =25 Pulse Width=300 µ S 1.0 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 50 TJ=25℃ 10ms Single Half Sine-Wave 40 30 20 10 0 1 5 10 50 100 NUMBER OF CYCLES AT 50Hz http://www.luguang.cn 1.6 1.2 Single Phase Half Wave 50HZ Resistive or Inductive Load 0.8 0.4 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, FIG.5--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE CURRENT AMPERES FIG.4 -- PEAK FORWARD SURGE CURRENT 2.0 200 100 60 40 20 10 6 4 TJ=25 2 1 0.1 0.2 0.4 1 2 4 10 20 REVERSE VOLTAGE,VOLTS mail:[email protected] 40 100