DB2W318 Silicon epitaxial planar type Unit: mm For rectification Features Low forward voltage VF Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 3V Packaging DB2W31800L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Symbol Rating Unit VR 30 V Forward current (Average) *1 IF(AV) 2 A Non-repetitive peak forward surge current *2 IFSM 30 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C 1: Cathode 2: Anode Panasonic JEITA Code Mini2-F3-B SC-109B Note) *1: Mounted on an alumina PC board (Board: 50 mm × 50 mm) *2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit 0.38 0.43 V 200 mA Forward voltage VF IF = 2 A Reverse current IR VR = 30 V 50 Terminal capacitance Ct VR = 10 V, f = 1 MHz 70 pF Reverse recovery time *1 trr IF = 100 mA, Irr = 0.1 × IR , RL = 100 Ω 23 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: January 2013 VR 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Ver. BED Output Pulse t IF trr t Irr = 0.1 × IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 DB2W318 DB2W318_ IR-VR DB2W318_ IF-VF IF VF 10 500 100°C 85°C Ta = 125°C 10−2 10−3 Reverse current IR (A) 10−4 100°C 10−3 10−5 85°C 10−4 10−6 25°C −30°C 10−5 0 25°C −30°C 10−7 0.2 0.4 0.6 10−8 0 10 Forward voltage VF (V) 100 0 30 0 10 (1) (2) (3) 10 (1) Non-heat sink (2) Mounted on glass epoxy print board. (3) Mounted on alumina print board. (50 mm × 50 mm × 0.8 mm) Solder in : 2 mm × 2 mm 10 Time t (s) 103 Forward current (Average) IF(AV) (A) tp / T IF DC 2.0 tp T 1.5 1/2 Sine Wave 1/4 0.5 0 0 25 50 75 100 125 150 175 Lead temperature Tl (°C) Ver. BED 30 PF(AV) IF(AV) VR = 15 V Tj = 125°C 1.0 20 Reverse voltage VR (V) DB2W318_ PF(AV)-IF(AV) 2.5 10−1 200 IF(AV) Tl 103 1 10−3 300 DB2W318_ IF(AV)-Tl Rth t Rth(j-l) = 15°C/W 400 Reverse voltage VR (V) DB2W318_Rth-t 102 20 Forward power dissipation (Average) PF(AV) (A) Forward current IF (A) 10−2 Ta = 25°C Terminal capacitance Ct (pF) Ta = 125°C 10−1 Thermal resistance Rth (°C/W) Ct VR 10−1 1 10−6 DB2W318_Ct-VR IR VR 1.0 IF 0.8 tp T 0.6 DC Sine Wave 1/2 1/4 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 Forward current (Average) IF(AV) (Α) 2 DB2W318 Mini2-F3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. 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