DB2W403 Silicon epitaxial planar type Unit: mm For rectification DB24403 in Mini2 type package Features Low forward voltage VF Forward current (Average) IF(AV) = 3 A rectification is possible Halogen-free/RoHs compliant (EU RoHS/UL-94 V-0/MSL Level1 compliant) Marking Symbol: 43 Packaging DB2W40300L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1: Cathode 2: Anode Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current *1 Non-repetitive peak forward surge current *2 Symbol Rating Unit VR 40 V VRM 40 V IF 3.0 A IFSM 30 A Junction temperature *1 Tj 150 °C Storage temperature Tstg –55 to +150 °C Panasonic JEITA Code Mini2-F3-B SC-109B Note) *1: Tl = 80°C *2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 3.0 A 0.54 V Reverse current IR VR = 40 V 250 mA Terminal capacitance Ct VR = 10 V, f = 1 MHz 50 pF Reverse recovery time *1 trr IF = IR = 100 mA, Irr = 10 mA 15 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: January 2013 VR Ver. BED t IF trr 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse IF = 100 mA IR = 100 mA t Irr = 10 mA 1 DB2W403 DB2W403_ IR-VR DB2W403_ IF-VF 10−1 Ta = 125°C 85°C Reverse current IR (A) Forward current IF (A) 10−3 10−2 10−5 85°C 0 −30°C 10−6 25°C 10−7 −30°C 10−6 25°C 10−4 100°C 10−4 0.2 0.4 0.6 10−8 0 10 Forward voltage VF (V) (2) (3) 10 (1) Non-heat sink (2) Mounted on glass epoxy print board. (3) Mounted on alumina print board. (50 mm × 50 mm × 0.8 mm) Solder in : 2 mm × 2 mm 10 Time t (s) 103 Forward current (Average) IF(AV) (A) (1) 10−1 100 50 0 40 0 10 IF PF(AV) IF(AV) tp T VR = 20 V Tj = 125°C 1/2 2.0 Sine Wave 1/4 1.0 0 0 30 DB2W403_ PF(AV)-IF(AV) DC 3.0 20 DB2W403_ IF(AV)-Tl tp / T 1 10−3 150 IF(AV) Tl 103 Rth(j-l) = 15°C/W 30 200 Reverse voltage VR (V) Rth t 102 20 Ta = 25°C f = 1 MHz Reverse voltage VR (V) DB2W403_Rth-t Thermal resistance Rth (°C/W) 100°C Ta = 125°C 10−2 Ct VR 250 25 50 75 100 125 150 175 Lead temperature Tl (°C) Ver. BED Forward power dissipation (Average) PF(AV) (A) 1 DB2W403_Ct-VR IR VR Terminal capacitance Ct (pF) IF VF 2.0 IF 1.5 tp T Sine Wave 1/4 DC 1/2 1.0 0.5 0 0 1 2 3 Forward current (Average) IF(AV) (Α) 2 DB2W403 Mini2-F3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. 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