TAYCHIPST ERD32-02

ERD32-02 THRU ERD32-04
200V-400V 3.0A
PLASTIC SILICON RECTIFIER
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERD03
-02
ERD03
-04
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
400
V
Maximum RMS voltage
V RMS
140
280
V
Maximum DC blocking voltage
VDC
200
400
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
3.0
A
IFSM
200.0
A
VF
1.0
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=100
10.0
IR
Typical junction capacitance
(Note1)
CJ
35
Typical thermal resistance
(Note2)
Rθ JA
20
TJ
-55----+150
TSTG
-55----+150
Operating junction temperature range
Storage temperature range
A
100.0
pF
/W
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
E-mail: [email protected]
1 of 2
Web Site: www.taychipst.com
ERD32-02 THRU ERD32-04
200V-400V 3.0A
PLASTIC SILICON RECTIFIER
RATINGS AND CHARACTERISTIC CURVES
ERD32-02 THRU ERD32-04
FIG.1 -- TYPICAL FORWARD CHARACTERISTIC
FIG.2 -- TYPICAL JUNCTION CHARACTERISTICS
JUNCTION CAPACITANCE,pF
10
AMPERES
1.0
TJ=250 C
Pulse Width
=300us
0.1
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
.01
0.6
0.4
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARDVOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
FIG.4 -- PEAK FORWARD SURGE CURRENT
FIG.3 -- FORWARD DERATING CURVE
6
200
5
TJ=125
8.3ms Single Half
Sine-Wave
150
AMPERES
4
AMPERES
3
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
2
100
50
1
0
1
2
8
4
2
10
100
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,
E-mail: [email protected]
NUMBEROF CYCLES AT60Hz
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Web Site: www.taychipst.com