THINKISEMI ES5E

ES5A thru ES5J
Pb Free Plating Product
®
Pb
ES5A thru ES5J
5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes
FEATURE
OUTLINE
Glass passivated chip junction
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Unit:inch(millimeter)
Cathode Band
0.126 (3.20)
0.246 (6.22)
0.220 (5.59)
0.114 (2.90)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
MECHANICAL DATA
Case:SMC/DO-214AB Package
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode band
Mounting Position: Any
Weight: 0.22 gram approximately
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0.002(0.05)
0.320 (8.13)
0.305 (7.75)
APPLICATION
LED SMPS/Industrial power supply
HID ballast stabilizer
Telecommunication SMPS/LED street lamp
SMC/DO-214AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
TA=25 C
at rated DC blocking voltage
TA=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance
Operating junction and storage temperature range
VRRM
VRMS
VDC
ES5A ES5B ES5C
50
35
50
100
70
100
150
105
150
ES5D ES5E
200
140
200
300
210
300
ES5G
ES5J
UNITS
400
280
400
600
420
600
VOLTS
VOLTS
VOLTS
I(AV)
5.0
Amps
IFSM
150.0
Amps
VF
0.95
1.3
1.7
Volts
IR
10.0
300.0
trr
35
ns
58.0
47.0
-65 to +150
pF
C/W
C
CJ
RQJA
TJ,TSTG
MA
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
ES5A thru ES5J
®
G
FIG. 1- FORWARD CURRENT DERATING CURVE
5.0
4.0
3.0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
2.0
1.0
0
0
25
50
75
100
125
150
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
RATINGS AND CHARACTERISTIC CURVES ES5A thru ES5J
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
120
90
60
30
175
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1
10
AMBIENT TEMPERATURE, C
TJ=25 C
PULSE WIDTH=300 Ms
1%DUTY CYCLE
1
0.1
ES5A-ES5D
ES5E-ES5J
0.01
0
0.4
0.8
1.2
1.6
1.8
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
1,000
100
10
TJ=100 C
1
0.01
0
100
10
TJ=25 C
TRANSIENT THERMAL IMPEDANCE,
C/W
200
10
REVERSE VOLTAGE,VOLTS
40
60
80
100
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
1
1.0
20
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
TJ=25 C
0.1
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.1
100
NUMBER OF CYCLES AT 60 Hz
0.1
1
10
100
100
t,PULSE DURATION,sec.
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/