TYSEMI 1SV251

Product specification
1SV251
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
Small interterminal capacitance (C=0.23pF typ).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
max).
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Small forward series resistance (rs=4.5
1
0.55
and permits 1SV251-applied equipment to be made smaller.
+0.1
1.3-0.1
+0.1
2.4-0.1
Small-sized package facilitates high-density mounting
1.Base
2.Emitter
3.collector
Absolute M axim um Ratings Ta = 25
Param eter
Sym bol
Value
Unit
Reverse voltage
VR
50
V
Forward current
IF
50
mA
Allowable power dissipation
P
150
mW
Junction tem perature
Tj
125
Storage tem perature
T stg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Reverse voltage
VR
Reverse current
IR
Conditions
Min
I R = 10
50
A
Typ
Max
Unit
V
V R = 50 V
0.1
Forward Voltage
VF
I F = 50 mA
0.92
Interterminal Capacitance
C
V R = 50 V, f = 1 MHz
0.23
Series Resistance
rs
I F = 10 mA, f = 100MHZ
4.5
A
V
pF
Note:The specifications shown above are for each individual diode.
Marking
Marking
GV
http://www.twtysemi.com
[email protected]
4008-318-123
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