Product specification BAV170T; BAV199T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 Ultra-Small Surface Mount Package +0.05 0.8-0.05 2 0.55 Features +0.01 0.1-0.01 Very Low Leakage Current 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Value Unit Peak Repetitive Reverse Voltage VRRM 85 V Working Peak Reverse Voltage VRWM 85 V VR 85 V 60 V DC Blocking Voltage RMS Reverse Voltage VR(RMS) Forward Continuous Current (Note 1) IFM Repetitive Peak Forward Current Single Diode 215 Double Diode 125 IFRM 500 @ t = 1.0 Non-Repetitive Peak Forward Surge Current IFSM @ t = 1.0 ms @ t = 1.0 s Power Dissipation (Note 1) PD Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range s mA mA 4 1 A 0.5 150 mW RèJA 833 /W Tj , TSTG -65 to + 150 Note 1.Device mounted on FR-4 PC board with recommended pad layout http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification BAV170T; BAV199T Electrical Characteristics Ta = 25 Parameter Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) Symbol Conditions V(BR)R IR = 100 VF IR Leakage Current (Note 2) Min A Typ Max 85 V IF = 1.0 mA 0.90 IF = 10 mA 1.0 IF = 50 mA 1.1 IF = 150 mA 1.25 VR = 75 V 5.0 CT Reverse Recovery Time trr f = 1 MHz; VR = 0 V V nA 80 VR = 75 V; Tj = 150 Total Capacitance Unit 2 IF = IR = 10mA, pF 3.0 ìs Irr = 0.1 x IR, RL = 100 Note 2.Short duration test pulse used to minimize self-heating effect. Marking Type BAV170T BAV199T Marking 51 52 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2