TYSEMI BAV170T

Product specification
BAV170T; BAV199T
SOT-523
Unit: mm
+0.1
1.6-0.1
+0.1
1.0-0.1
+0.05
0.2-0.05
1
+0.15
1.6-0.15
Ultra-Small Surface Mount Package
+0.05
0.8-0.05
2
0.55
Features
+0.01
0.1-0.01
Very Low Leakage Current
0.35
3
+0.25
0.3-0.05
0.5
+0.1
-0.1
+0.1
0.8-0.1
+0.05
0.75-0.05
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
85
V
Working Peak Reverse Voltage
VRWM
85
V
VR
85
V
60
V
DC Blocking Voltage
RMS Reverse Voltage
VR(RMS)
Forward Continuous Current (Note 1)
IFM
Repetitive Peak Forward Current
Single Diode
215
Double Diode
125
IFRM
500
@ t = 1.0
Non-Repetitive Peak Forward Surge Current
IFSM
@ t = 1.0 ms
@ t = 1.0 s
Power Dissipation (Note 1)
PD
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
s
mA
mA
4
1
A
0.5
150
mW
RèJA
833
/W
Tj , TSTG
-65 to + 150
Note
1.Device mounted on FR-4 PC board with recommended pad layout
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Product specification
BAV170T; BAV199T
Electrical Characteristics Ta = 25
Parameter
Reverse Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
Symbol
Conditions
V(BR)R
IR = 100
VF
IR
Leakage Current (Note 2)
Min
A
Typ
Max
85
V
IF = 1.0 mA
0.90
IF = 10 mA
1.0
IF = 50 mA
1.1
IF = 150 mA
1.25
VR = 75 V
5.0
CT
Reverse Recovery Time
trr
f = 1 MHz; VR = 0 V
V
nA
80
VR = 75 V; Tj = 150
Total Capacitance
Unit
2
IF = IR = 10mA,
pF
3.0
ìs
Irr = 0.1 x IR, RL = 100
Note
2.Short duration test pulse used to minimize self-heating effect.
Marking
Type
BAV170T
BAV199T
Marking
51
52
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2