Product specification BZT55C12 ■ Features LL-34 Unit: mm ● 500mW Power Dissipation ● Low reverse current level 1.50 1.30 2.64REF ● Very high stability 0.50 0.35 ● Low noise ● Ideal for Surface Mountted Application 3.60 3.30 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Power Dissipation Forward Voltage Symbol Rating Unit PD 500 mW VF 1.5 V RθJA 300 ℃/W Tj, TSTG -65 to +175 ℃ (Note 1) @ IF = 200mA Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Notes: 1. Valid provided that electrodes are kept at ambient temperature. ■ Electrical Characteristics Ta = 25℃ Zener Voltage Range (Note 2) Type BZT55C12 VZ @ IZT Maximum Zener Impedance Maximum Reverse Current IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR Nom (V) Min (V) Max (V) mA Ω Ω mA μA V 12 11.4 12.7 5 20 90 1 0.1 9.1 Notes: 2. Tested with pulses, Tp ≤100ms. http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification BZT55C12 Typical Characteristics 1.3 VZtn – Relative Voltage Change PD – Total Power Dissipation ( mW ) 600 500 400 300 200 100 0 0 40 80 120 160 VZtn=VZt/VZ(25°C) 1.2 TKVZ=10 10 1 20 25 TK VZ – Temperature Coefficient of VZ ( 10 –4 /K ) IZ=5mA DVZ – Voltage Change ( mV ) Tj = 25°C 100 15 10–4/K 10–4/K –4 10–4/K 0.9 0 60 120 180 240 Figure 2. Typical Change of Working Voltage vs. Junction Temperature 1000 10 4 2 Tj – Junction Temperature ( °C ) Figure 1. Total Power Dissipation vs. Ambient Temperature 5 10–4/K 10–4/K 0 –2 10–4/K 1.0 Tamb – Ambient Temperature ( °C ) 0 8 6 1.1 0.8 –60 200 10–4/K 15 10 5 IZ=5mA 0 –5 0 10 VZ – Z-Voltage ( V ) 20 30 40 50 VZ – Z-Voltage ( V ) Figure 3. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C Figure 4. Temperature Coefficient of Vz vs. Z–Voltage C D – Diode Capacitance ( pF ) 200 150 VR = 2V Tj = 25°C 100 50 0 0 5 10 15 20 25 VZ – Z-Voltage ( V ) Figure 5. Diode Capacitance vs. Z–Voltage http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Product specification 100 50 10 40 IZ – Z-Current ( mA ) IF – Forward Current ( mA ) BZT55C12 Tj = 25°C 1 0.1 0.01 P D =500mW Tamb=25°C 30 20 10 0.001 0 0 0.2 0.4 0.6 1.0 0.8 15 20 25 VF – Forward Voltage ( V ) Figure 6. Forward Current vs. Forward Voltage Figure 7. Z–Current vs. Z–Voltage 1000 r Z – Differential Z-Resistance ( W ) IZ – Z-Current ( mA ) 100 80 P D =500mW Tamb=25°C 60 40 20 IZ=1mA 100 5mA 10 10mA 0 Tj = 25°C 1 0 4 8 12 20 16 0 5 10 VZ – Z-Voltage ( V ) 15 20 25 VZ – Z-Voltage ( V ) Figure 8. Z–Current vs. Z–Voltage Z thp – Thermal Resistance for Pulse Cond. (K/W) 35 30 VZ – Z-Voltage ( V ) Figure 9. Differential Z–Resistance vs. Z–Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse RthJA=300K/W DT=Tjmax–Tamb 10 tp/T=0.01 tp/T=0.1 tp/T=0.02 iZM=(–VZ+(VZ2+4rzj tp/T=0.05 1 10–1 100 101 DT/Zthp)1/2)/(2rzj) 102 tp – Pulse Length ( ms ) Figure 10. Thermal Response http://www.twtysemi.com [email protected] 4008-318-123 3 of 3