RoHS 1SS387 1SS387 High Speed SWITCHING Diodes D T ,. L 1.20 FEATURES Small package 0.80 0.30 1.60 0.10 IC Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits 80 V 200 mA IO 100 mA Isurge 1000 mA Tj 125 ℃ Tstg -55~+125 ℃ DC reverse voltage VR Peak forward current IFM R T C E L Junction temperature Storage temperature E Unit V VRM Surge current (10ms) SOD-523 85 Peak reverse voltage Mean rectifying current O N C O 0.65 Electrical Ratings @TA=25℃ J E Parameter Forward voltage W Symbol Min. Typ. Max. Unit Conditions VF1 0.62 V IF=1mA VF2 0.75 V IF=10mA VF3 1.2 V IF=100mA IR1 0.1 μA VR=30V IR2 0.5 μA VR=80V Capacitance between terminals CT 3.0 pF VR=0,f=1MHZ Reverse recovery time trr 4 ns VR=6V,IF=10mA,RL=100Ω Reverse current WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1SS387 R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]