DATA SHEET LASER DIODE NX8303BG-CC,NX8303CG-CC 1 310 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 622 Mb/s DESCRIPTION The NX8303BG-CC and NX8303CG-CC are 1 310 nm Multiple Quantum Well (MQW) structured Distributed FeedBack (DFB) laser diode coaxial module with single mode fiber. These modules are ideal as a light source for Synchronous Digital Hierarchy (SDH) system, STM-4, long-haul L4.1 ITU-T recommendations. FEATURES • Peak emission wavelength λp = 1 310 nm • Optical output power Pf = 2.0 mW • Wide operating temperature range TC = −10 to +85°C • Side Mode Suppression Ratio SMSR = 40 dB • InGaAs monitor PIN-PD • With SC-UPC connector • Based on Telcordia reliability The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PL10175EJ01V0DS (1st edition) (Previous No. P15231EJ2V0DS00) Date Published July 2002 CP(K) Printed in Japan The mark • shows major revised points. NEC Corporation 2001 NEC Compound Semiconductor Devices 2002 NX8303BG-CC,NX8303CG-CC PACKAGE DIMENSIONS (UNIT : mm) NX8303CG-CC 6.0 15.0 6.0 27.6±1.0 0.5 7.3 0.5±0.2 20.4±1.0 φ 0.45±0.05 1.2±0.2 φ 2.2 8.0±0.3 20.0±1.0 3.2 2.2 4.0±0.2 8.0±0.3 φ 0.9 Optical Fiber (SMF) Length: 0.5 m With SC Connector φ 7.0±0.2 28.3±1.0 φ 0.9 Optical Fiber (SMF) Length: 0.5 m With SC Connector φ 7.0±0.2 19.5±1.0 NX8303BG-CC φ 0.45±0.05 12.7±0.2 16.0 17.0±0.2 PIN CONNECTIONS PIN CONNECTIONS P.C.D. = φ 2.0 4–R1.25±0.2 3 1 2 4 PD 3 1 2 3 2 4 2– φ 2.5 LD Case 1 7.0±0.2 4 7.2±0.3 PD 3.7±0.3 1.0±0.1 P.C.D. = φ 2.0 1 3 Case 4 8.5±0.2 2 LD 12.0±0.15 OPTICAL FIBER CHARACTERISTICS Parameter Specification Unit Mode Field Diameter 9.5±1 µm Cladding Diameter 125±2 µm 2 % 1.6 % 0.9±0.1 mm 1 100 to 1 270 nm 30 mm 500±50 mm Maximum Cladding Noncircularity Maximum Core/Cladding Concentricity Outer Diameter Cut-off Wavelength Minimum Fiber Bending Radius Fiber Length Flammability UL1581 VW-1 SC-UPC Connector Fiber Length: 500±50 mm 2 Data Sheet PL10175EJ01V0DS 8.99±0.5 mm 35±2 mm NX8303BG-CC,NX8303CG-CC ORDERING INFORMATION Part Number Flange Type NX8303BG-CC Flat Mount Flange NX8303CG-CC Vertical Mount Flange Available Connector With SC-UPC Connector ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power from Fiber Pf 5 mW Forward Current of LD IF 150 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 2.0 mA Reverse Voltage of PD VR 15 V Operating Case Temperature TC −10 to +85 °C Storage Temperature Tstg −40 to +85 °C Lead Soldering Temperature Tsld 260 (10 sec.) °C Relative Humidity (noncondensing) RH 85 % Data Sheet PL10175EJ01V0DS 3 NX8303BG-CC,NX8303CG-CC ELECTRO-OPTICAL CHARACTERISTICS (TC = −10 to +85°°C, unless otherwise specified) Parameter Symbol Conditions MIN. TYP. MAX. Unit Optical Output Power from Fiber Pf CW 2.0 mW Operating Voltage Vop Pf = 2.0 mW 1.2 1.6 V Threshold Current Ith TC = 25°C 15 25 mA 55 Threshold Output Power Pth IF = Ith Modulation Current Imod Pf = 2.0 mW, TC = 25°C 8 Pf = 2.0 mW 6 Differential Efficiency ηd Temperature Dependence of Differential Efficiency ∆ηd Kink (Refer to DEFINITIONS) kink Peak Emission Wavelength Temperature Dependence of Peak Emission Wavelength Spectral Width Side Mode Suppression Ratio λp Pf = 2.0 mW, TC = 25°C 0.070 Pf = 2.0 mW 0.040 ∆ηd = 10 log ηd (@ TC °C) −3.5 SMSR µW 30 mA 50 0.100 0.200 W/A 0.300 −2.2 dB ηd (@ 25°C) ±20 % 1 310 1 335 nm 0.09 0.1 nm/°C 0.1 1.0 nm Pf = Up to 2.4 mW Pf = 2.0 mW 1 280 ∆λ/∆T ∆λ 20 100 Pf = 2.0 mW, −20 dB down width Pf = 2.0 mW 30 40 dB GHz Cutt-off Frequency fC −3 dB, VR = 5 V, Pf = 2.0 mW 2.0 Rise Time tr 10-90%, Ppk = 2.0 mW, IF = Ith 0.15 0.5 ns Fall Time tf 90-10%, Ppk = 2.0 mW, IF = Ith 0.15 0.5 ns Monitor Current Im VR = 5 V, Pf = 2.0 mW 700 1 500 µA Monitor Dark Current ID VR = 5 V, TC = 25°C 0.1 50 nA VR = 5 V 10 500 VR = 5 V, f = 1 MHz 1.0 20 pF 10 % 1.0 dB Monitor PD Terminal Capacitance Ct Linearity (Refer to DEFINITIONS) LINm Tracking Error (Refer to DEFINITIONS) γ Relative Intensity Noise RIN 4 200 VR = 5 V, Pf = 0.2 to 2.0 mW Im = const. Ref = −14 dB Data Sheet PL10175EJ01V0DS 0.5 −135 dB/Hz NX8303BG-CC,NX8303CG-CC PARAMETER DEFINITIONS Kink : kink Pf kink = IF - P f (mW) 2.4 dPK × 100 [%] PK dPK = dPo MAX. dPo PK ≤ 2.4 (mW) dPK PK IF - η d IF 0 (mA) Linearity : LINm Pf LINm = (mW) dPL × 100 [%] PL 2.0 dPL = dPo MAX. 0.2 < PL < 2.0 (mW) PL dPL dPo 0.2 0 Im (mA) Tracking Error : γ Pf γ = 10 log (mW) Pf 2.0 [dB] TC = 25˚C 2.0 TC = –10 to +85˚C Pf 0 Im Im (mA) Data Sheet PL10175EJ01V0DS 5 NX8303BG-CC,NX8303CG-CC TYPICAL CHARACTERISTICS (TC = 25°°C, unless otherwise specified) OPERATING CURRENT AND THRESHOLD CURRENT vs. CASE TEMPERATURE TEMPERATURE DEPENDENCE OF PEAK EMISSION WAVELENGTH 1 320 Peak Emission Wavelength λp (nm) Operating Current Iop (mA), Threshold Current Ith (mA) 100 Iop@Pf = 2 mW Ith 10 1 –40 –20 0 20 40 60 80 100 1 315 1 310 1 305 1 300 –40 40 60 80 TEMPERATURE DEPENEDENCE OF DIFFERENTIAL EFFICIENCY FORWARD CURRENT vs. FORWARD VOLTAGE 0.12 0.06 –20 0 20 40 60 80 80 60 40 20 100 Case Temperature TC (˚C) 10 0 –10 –20 –30 –40 –50 –60 1 310 0 0.5 1.0 1.5 Forward Voltage VF (V) SPECTRUM –70 1 300 100 100 Forward Current IF (mA) Differential Efficiency η d (W/A) 20 Case Temperature TC (˚C) 0.00 –40 Relative Intensity (dB) 0 Case Temperature TC (˚C) 0.18 1 320 Wavelength λ (nm) Remark The graphs indicate nominal characteristics. 6 –20 Data Sheet PL10175EJ01V0DS 2.0 2.5 NX8303BG-CC,NX8303CG-CC DFB-LD FAMILY Absolute Maximum Ratings Part Number TC (°C) Tstg (°C) Electro-Optical Characteristics (TC = 25°C) Ith (mA) Pf (mW) λp (nm) TYP. MIN. TYP. Application Package NX8300BE-CC NX8300CE-CC 0 to +75 −40 to +85 15 2 *1 NX8303BG-CC NX8303CG-CC −10 to +85 −40 to +85 15 2 *1 1 310 622 Mb/s: STM-4 (L-4.1) Coaxial NX8304BE-CC NX8304CE-CC −40 to +85 −40 to +85 15 2 *1 1 310 For fiberoptic communications Coaxial NX8503BG-CC NX8503CG-CC −10 to +85 −40 to +85 15 2 *1 1 550 156 Mb/s: STM-1 (L-1.2, L-1.3) Coaxial 1 310 2.5 Gb/s: STM-16 (S-16.1, L-16.1) Coaxial 622 Mb/s: STM-4 (L-4.2, L-4.3) NX8504BE-CC NX8504CE-CC −10 to +85 −40 to +85 15 2 NX8560LJ-CC −20 to +70 −40 to +85 6 −1 dBm 1 550 NX8562LB −20 to +65 −40 to +85 20 20 NX8563LB −20 to +65 −40 to +85 20 10 NX8564LE-CC −20 to +70 −40 to +85 7 NX8565LE-CC −20 to +70 −40 to +85 7 NX8566LE-CC −20 to +70 −40 to +85 7 0 dBm 1 550 NX8570 Series −20 to +70 −40 to +85 20 20 NX8571 Series −20 to +70 −40 to +85 20 10 *1 1 550 622 Mb/s: STM-4 (L-4.2, L-4.3) Coaxial *2 ≤ 10 Gb/s: STM-64 BFY with GPO 1 550 *2 CW Light Source for external modulator BFY 1 550 *2 CW Light Source for external modulator BFY −2 dBm *1 1 550 *2 2.5 Gb/s: STM-16, 360 km EA modulator integrated BFY −2 dBm *1 1 550 *2 2.5 Gb/s: STM-16, 600 km EA modulator integrated BFY *2 2.5 Gb/s: STM-16, 240 km EA modulator integrated BFY 1 550 *2 CW Light Source with λ monitoring PD BFY 1 550 *2 CW Light Source with λ monitoring PD BFY TM *1 TYP. *2 Available for DWDM Wavelengths based on ITU-T recommendations Data Sheet PL10175EJ01V0DS 7 NX8303BG-CC,NX8303CG-CC REFERENCE Document Name Document No. Optical semiconducrtor devices for fiberoptic communications Selection Guide P12480E Opto-Electronics Devices Pamphlet P13623E Opto-Electronics Devices (CD-ROM) P12944X NEC semiconductor device reliability/quality control system Quality grades on NEC semiconductor devices *1 C11159E *1 C11531E SEMICONDUCTOR SELECTION GUIDE −Products and Packages− *1 *1 Published by NEC Corporation 8 Data Sheet PL10175EJ01V0DS X13769E NX8303BG-CC,NX8303CG-CC GPO is a trademark of Gilbert Engineering Co., Inc. • The information in this document is current as of July, 2002. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PL10175EJ01V0DS 9 NX8303BG-CC,NX8303CG-CC SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. Caution Optical Fiber A glass-fiber is attached on the product. Handle with care. • When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part or fragments. 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