WED3DG649V-D1 White Electronic Designs 64MB- 8Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION n Burst Mode Operation n Auto and Self Refresh capability n LVTTL compatible inputs and outputs n Serial Presence Detect with EEPROM n Fully synchronous: All signals are registered on the positive edge of the system clock n Programmable Burst Lengths: 1, 2, 4, 8 or Full Page n 3.3V ± 0.3V Power Supply n 144 Pin SO-DIMM JEDEC The WED3DG649V is a 8Mx64 synchronous DRAM module which consists of four 8Meg x 16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSSOP package for Serial Presence Detect which are mounted on a 144 pin SO-DIMM multilayer FR4 Substrate. * This product is subject to change without notice. PIN NAMES PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE) PINOUT A0 – A11 Address Input (Multiplexed) BA0-1 Select Bank DQ0-63 Data Input/Output DQ55 CLK0 Clock Input VCC CKE0 Clock Enable Input CS0# Chip Select Input RAS# Row Address Strobe BA1 CAS# Column Address Strobe A11 WE# Write Enable 114 VCC DQM2 116 DQM6 DQM0-7 DQM 117 DQM3 118 DQM7 VCC Power Supply (3.3V) *A12 119 VSS 120 VSS VSS Ground 72 *A13 121 DQ24 122 DQ56 *VREF Power Supply for Reference 74 *CLK1 123 DQ25 124 DQ57 SDA Serial Data I/O VSS 76 VSS 125 DQ26 126 DQ58 77 NC 78 NC 127 DQ27 128 DQ59 SCL Serial Clock VSS 79 NC 80 NC 129 VCC 130 VCC DNU Do Not Use 38 DQ40 81 VCC 82 VCC 131 DQ28 132 DQ60 NC No Connect DQ9 40 DQ41 83 DQ16 84 DQ48 133 DQ29 134 DQ61 DQ10 42 DQ42 85 DQ17 86 DQ49 135 DQ30 136 DQ62 DQ11 44 DQ43 87 DQ18 88 DQ50 137 DQ31 138 DQ63 45 VCC 46 VCC 89 DQ19 90 DQ51 139 VSS 140 VSS 47 DQ12 48 DQ44 91 VSS 92 VSS 141 **SDA 142 **SCL 49 DQ13 50 DQ45 93 DQ20 94 DQ52 143 VCC 144 VCC PIN FRONT PIN BACK PIN FRONT PIN BACK PIN BACK PIN BACK 1 VSS 2 VSS 51 DQ14 52 DQ46 95 DQ21 96 DQ53 3 DQ0 4 DQ32 53 DQ15 54 DQ47 97 DQ22 98 DQ54 5 DQ1 6 DQ33 55 VSS 56 VSS 99 DQ23 100 7 DQ2 8 DQ34 57 NC 58 NC 101 VCC 102 9 DQ3 10 DQ35 59 NC 60 NC 103 A6 104 A7 11 VCC 12 VCC 105 A8 106 BA0 13 DQ4 14 DQ36 107 VSS 108 VSS 15 DQ5 16 DQ37 109 A9 110 17 DQ6 18 DQ38 61 CLK0 62 CKE0 111 A10/AP 112 19 DQ7 20 DQ39 63 VCC 64 VCC 113 VCC 21 VSS 22 VSS 65 RAS# 66 CAS# 115 23 DQM0 24 DQM4 67 WE# 68 *CKE1 25 DQM1 26 DQM5 69 CS0# 70 27 VCC 28 VCC 71 *CS1# 29 A0 30 A3 73 DNU 31 A1 32 A4 75 33 A2 34 A5 35 VSS 36 37 DQ8 39 41 43 VOLTAGE KEY * These pins are not used in this module. ** These pins should be NC in the system which does not support SPD. White Electronic Designs Corp. reserves the right to change products or specifications without notice. Sept. 2002 Rev. 0 1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WED3DG649V-D1 White Electronic Designs FUNCTIONAL BLOCK DIAGRAM ���� ���� ���� ���� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ���� ���� ���� ���� ���� ���� ��� ��� ���� ���� ���� ���� ���� ���� ���� ��� ���� �� ���� ���� ���� ���� ���� ���� ���� ���� ���� ��� ��� ��� ��� ��� ��� ��� ��� ���� ���� ���� ���� ���� ���� ���� ���� ��� ��� ���� ���� ���� ���� ���� ���� ���� ��� �� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ��� ��� ��� ��� ��� ��� ��� ��� ��� ���� �� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ���� ��� ��� ��� ��� ��� ��� ��� ��� ���� ���� ���� ���� ���� ���� ���� ���� ��� ��� ���� ���� ���� ���� ���� ���� ���� ��� ��� ���� ���� ���� ���� ���� ���� ��� �� ���� ��������� ��� �������������� ���� ���� ��� ���� ������������ ������������ ������������ ������������ ������������ ��Ω �� ��� ��� ��� ��� �� Ω ��� �� �������������������� ���� �� �� �� ��� ��������������������� �������������� ������������ ��� ���� �� Ω ���� White Electronic Designs Corp. reserves the right to change products or specifications without notice. Sept. 2002 Rev. 0 2 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WED3DG649V-D1 White Electronic Designs ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Voltage on any pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V Voltage on VCC supply relative to VSS VCC, VCCQ -1.0 ~ 4.6 V TSTG -55 ~ +150 °C Storage Temperature Power Dissipation PD 9 W Short Circuit Current IOS 50 mA Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. RECOMMENDED DC OPERATING CONDITIONS (Voltage Referenced to: VSS = 0V, TA ≤ 0°C ≤ +70°C) Parameter Symbol Min Typ Max Unit Supply Voltage VCC 3.0 3.3 3.6 V Note Input High Voltage VIH 2.0 3.0 VCCQ+0.3 V Input Low Voltage VIL -0.3 — 0.8 V 2 Output High Voltage VOH 2.4 — — V IOH= -2mA Output Low Voltage VOL — — 0.4 V IOL= -2mA Input Leakage Current ILI -10 — 10 µA 3 1 Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns. 2. VIL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ VIN ≤ VCCQ Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE (TA = 23°C, f = 1MHz, VCC = 3.3V, VREF=1.4V ± 200mV) Parameter Symbol Max Unit Input Capacitance (A0-A12) CIN1 25 pF Input Capacitance (RAS#,CAS#,WE#) CIN2 25 pF Input Capacitance (CKE0) CIN3 25 pF Input Capacitance (CLK0) CIN4 21 pF Input Capacitance (CS0#) CIN5 25 pF Input Capacitance (DQM0-DQM7) CIN6 12 pF Input Capacitance (BA0-BA1) CIN7 25 pF Data input/output capacitance (DQ0-DQ63) CouT 12 pF White Electronic Designs Corp. reserves the right to change products or specifications without notice. Sept. 2002 Rev. 0 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs WED3DG649V-D1 OPERATING CURRENT CHARACTERISTICS (VCC = 3.3V, TA = 0°C ≤ +70°C) Version Parameter Symbol Conditions 133 100 Units Note 600 550 mA 1 Operating Current (One bank active) ICC1 Burst Length = 1 tRC ≥ tRC(min) IOL = 0mA Precharge Standby Current in Power Down Mode ICC2P CKE ≤ VIL(max), tCC = 10ns 4 ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 4 ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns Input signals are charged one time during 20 80 ICC2NS CKE ≥ VIH(min), CLK ≤VIL(max), tCC = ∞ Input signals are stable 30 ICC3P CKE ≥ VIL(max), tCC = 10ns 20 ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 20 ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns Input signals are changed one time during 20ns 120 ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞ Input signals are stable ICC4 Io = mA Page burst 4 Banks activated tCCD = 2CLK 720 880 Precharge Standby Current in Non-Power Down Mode Active Standby Current in Power-Down Mode Active Standby Current in Non-Power Down Mode Operating Current (Burst mode) Refresh Current ICC5 tRC ≥ tRC(min) Self Refresh Current ICC6 CKE ≤ 0.2V mA mA mA mA mA 80 10 675 mA 1 820 mA 2 mA Notes: 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCCQ/VSSQ) White Electronic Designs Corp. reserves the right to change products or specifications without notice. Sept. 2002 Rev. 0 4 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs Ordering Information Speed CAS Latency WED3DG649V10D1 100MHz CL=2 WED3DG649V7D1 133MHz CL=2 WED3DG649V75D1 133MHz CL=3 WED3DG649V-D1 Note: Available in Industrial temperature. PACKAGE DIMENSIONS ALL DIMENSIONS ARE IN INCHES White Electronic Designs Corp. reserves the right to change products or specifications without notice. Sept. 2002 Rev. 0 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com