ETC WED3DG649V-D1

WED3DG649V-D1
White Electronic Designs
64MB- 8Mx64 SDRAM, UNBUFFERED
FEATURES
DESCRIPTION
n
Burst Mode Operation
n
Auto and Self Refresh capability
n
LVTTL compatible inputs and outputs
n
Serial Presence Detect with EEPROM
n
Fully synchronous: All signals are registered on the positive
edge of the system clock
n
Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
n
3.3V ± 0.3V Power Supply
n
144 Pin SO-DIMM JEDEC
The WED3DG649V is a 8Mx64 synchronous DRAM
module which consists of four 8Meg x 16 SDRAM
components in TSOP II package, and one 2Kb EEPROM
in an 8 pin TSSOP package for Serial Presence Detect
which are mounted on a 144 pin SO-DIMM multilayer
FR4 Substrate.
* This product is subject to change without notice.
PIN NAMES
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
PINOUT
A0 – A11
Address Input (Multiplexed)
BA0-1
Select Bank
DQ0-63
Data Input/Output
DQ55
CLK0
Clock Input
VCC
CKE0
Clock Enable Input
CS0#
Chip Select Input
RAS#
Row Address Strobe
BA1
CAS#
Column Address Strobe
A11
WE#
Write Enable
114
VCC
DQM2
116
DQM6
DQM0-7
DQM
117
DQM3
118
DQM7
VCC
Power Supply (3.3V)
*A12
119
VSS
120
VSS
VSS
Ground
72
*A13
121
DQ24
122
DQ56
*VREF
Power Supply for Reference
74
*CLK1
123
DQ25
124
DQ57
SDA
Serial Data I/O
VSS
76
VSS
125
DQ26
126
DQ58
77
NC
78
NC
127
DQ27
128
DQ59
SCL
Serial Clock
VSS
79
NC
80
NC
129
VCC
130
VCC
DNU
Do Not Use
38
DQ40
81
VCC
82
VCC
131
DQ28
132
DQ60
NC
No Connect
DQ9
40
DQ41
83
DQ16
84
DQ48
133
DQ29
134
DQ61
DQ10
42
DQ42
85
DQ17
86
DQ49
135
DQ30
136
DQ62
DQ11
44
DQ43
87
DQ18
88
DQ50
137
DQ31
138
DQ63
45
VCC
46
VCC
89
DQ19
90
DQ51
139
VSS
140
VSS
47
DQ12
48
DQ44
91
VSS
92
VSS
141
**SDA
142
**SCL
49
DQ13
50
DQ45
93
DQ20
94
DQ52
143
VCC
144
VCC
PIN
FRONT
PIN
BACK
PIN
FRONT
PIN
BACK
PIN
BACK
PIN
BACK
1
VSS
2
VSS
51
DQ14
52
DQ46
95
DQ21
96
DQ53
3
DQ0
4
DQ32
53
DQ15
54
DQ47
97
DQ22
98
DQ54
5
DQ1
6
DQ33
55
VSS
56
VSS
99
DQ23
100
7
DQ2
8
DQ34
57
NC
58
NC
101
VCC
102
9
DQ3
10
DQ35
59
NC
60
NC
103
A6
104
A7
11
VCC
12
VCC
105
A8
106
BA0
13
DQ4
14
DQ36
107
VSS
108
VSS
15
DQ5
16
DQ37
109
A9
110
17
DQ6
18
DQ38
61
CLK0
62
CKE0
111
A10/AP
112
19
DQ7
20
DQ39
63
VCC
64
VCC
113
VCC
21
VSS
22
VSS
65
RAS#
66
CAS#
115
23
DQM0
24
DQM4
67
WE#
68
*CKE1
25
DQM1
26
DQM5
69
CS0#
70
27
VCC
28
VCC
71
*CS1#
29
A0
30
A3
73
DNU
31
A1
32
A4
75
33
A2
34
A5
35
VSS
36
37
DQ8
39
41
43
VOLTAGE KEY
* These pins are not used in this module.
** These pins should be NC in the system which does
not support SPD.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Sept. 2002
Rev. 0
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WED3DG649V-D1
White Electronic Designs
FUNCTIONAL BLOCK DIAGRAM
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White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Sept. 2002
Rev. 0
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WED3DG649V-D1
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 ~ 4.6
V
TSTG
-55 ~ +150
°C
Storage Temperature
Power Dissipation
PD
9
W
Short Circuit Current
IOS
50
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = 0V, TA ≤ 0°C ≤ +70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
3.0
3.3
3.6
V
Note
Input High Voltage
VIH
2.0
3.0
VCCQ+0.3
V
Input Low Voltage
VIL
-0.3
—
0.8
V
2
Output High Voltage
VOH
2.4
—
—
V
IOH= -2mA
Output Low Voltage
VOL
—
—
0.4
V
IOL= -2mA
Input Leakage Current
ILI
-10
—
10
µA
3
1
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VCCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(TA = 23°C, f = 1MHz, VCC = 3.3V, VREF=1.4V ± 200mV)
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A12)
CIN1
25
pF
Input Capacitance (RAS#,CAS#,WE#)
CIN2
25
pF
Input Capacitance (CKE0)
CIN3
25
pF
Input Capacitance (CLK0)
CIN4
21
pF
Input Capacitance (CS0#)
CIN5
25
pF
Input Capacitance (DQM0-DQM7)
CIN6
12
pF
Input Capacitance (BA0-BA1)
CIN7
25
pF
Data input/output capacitance (DQ0-DQ63)
CouT
12
pF
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Sept. 2002
Rev. 0
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WED3DG649V-D1
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C ≤ +70°C)
Version
Parameter
Symbol
Conditions
133
100
Units
Note
600
550
mA
1
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
4
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
4
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns
Input signals are charged one time during 20
80
ICC2NS
CKE ≥ VIH(min), CLK ≤VIL(max), tCC = ∞
Input signals are stable
30
ICC3P
CKE ≥ VIL(max), tCC = 10ns
20
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
20
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
120
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
Input signals are stable
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
720
880
Precharge Standby Current
in Non-Power Down Mode
Active Standby Current in
Power-Down Mode
Active Standby Current in
Non-Power Down Mode
Operating Current (Burst mode)
Refresh Current
ICC5
tRC ≥ tRC(min)
Self Refresh Current
ICC6
CKE ≤ 0.2V
mA
mA
mA
mA
mA
80
10
675
mA
1
820
mA
2
mA
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCCQ/VSSQ)
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Sept. 2002
Rev. 0
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
Ordering Information
Speed
CAS Latency
WED3DG649V10D1
100MHz
CL=2
WED3DG649V7D1
133MHz
CL=2
WED3DG649V75D1
133MHz
CL=3
WED3DG649V-D1
Note: Available in Industrial temperature.
PACKAGE DIMENSIONS
ALL DIMENSIONS ARE IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Sept. 2002
Rev. 0
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com