IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer BD136, BD138, BD140 TO-126 (SOT-32) Plastic Package BD136, 138, 140 PNP PLASTIC POWER TRANSISTORS Complementary BD135, 137, 139 Medium Power Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 0.5 A; IB = 0.05 A D.C. current gain IC = 0.15 A; VCE = 2 V Data Sheet V V A W °C max. 0.5 V min. max. 40 250 max. max. max. max. max. VCEsat hFE RATINGS (at T A=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Continental Device India Limited 138 140 60 100 60 80 1.5 12.5 150 VCBO VCEO IC Ptot Tj max. max. max. 136 45 45 136 45 45 138 60 60 5.0 140 100 80 V V V Page 1 of 3 BD136, BD138, BD140 Collector current Base current Total power dissipation up to TA = 25°C Derate above 25°C Total power dissipation up to TC = 25°C Derate above 25°C Junction temperature Storage temperature IC IB Ptot Tj Tstg THERMAL RESISTANCE From junction to case From junction to ambient Rth jc Rth ja Ptot max. max. max. max max. max max. CHARACTERISTICS T amb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 30 V IE = 0; VCB = 30 V; T C = 125°C Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 0.03 A; IB = 0 IC = 1 mA; I E = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 0.5 A; IB = 0.05 A Base-emitter on voltage IC = 0.5A; V CE = 2V D.C. current gain IC = 0.005 A; VCE = 2 V* 1.5 0.5 1.25 10 12.5 100 150 –65 to +150 A A W mW/°C W mW/°C °C ºC 10 100 °C/W °C/W 136 138 140 ICBO ICBO max. max. 0.1 10 µA µA IEBO max. 10 µA VCEO(sus) * VCBO VEBO min. min. min. VCEsat * max. 0.5 V VBE(on)* max. 1.0 V hFE* min. 25 IC = 0.15 A; VCE = 2 V** hFE* min. max. 40 250 IC = 0.5 A; V CE = 2 V* hFE* min. 25 –6 min. 40 max. 100 –10 min. 63 max. 160 –16 min. 100 max. 250 –25 min. 160 max. 400 ** hFE classification: * Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%. Continental Device India Limited Data Sheet 45 45 60 60 5.0 80 100 V V V Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3