IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer BD166, BD168, BD170 TO-126 (SOT-32) Plastic Package BD166, 168, 170 PNP PLASTIC POWER TRANSISTORS Complementary BD165, 167, 169 Audio Amplifier and Driver Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 0.5 A; IB = 0.05 A D.C. current gain IC = 0.15 A; VCE = 2 V Data Sheet 168 60 60 1.5 20 150 max. max. max. max. max. VCEsat max. 0.5 hFE min. 40 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Continental Device India Limited 166 45 45 VCBO VCEO IC Ptot Tj max. max. max. 166 45 45 168 60 60 5.0 170 80 80 V V A W °C V 170 80 80 V V V Page 1 of 3 BD166, BD168, BD170 Collector current IC Base current IB Total power dissipation up to TA = 25°C P tot Derate above 25°C Total power dissipation up to TC = 25°C P tot Derate above 25°C Junction temperature Tj Storage temperature T stg THERMAL RESISTANCE From junction to case From junction to ambient max. max. max. max max. max max. 6.25 100 R th jc R th ja CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 45 V IE = 0; VCB = 60 V IE = 0; VCB = 80 V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 0.1 A; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 0.5 A; IB = 0.05 A Base-emitter on voltage IC = 0.5 A; VCE = 2 V D.C. curent gain IC = 0.15 A; VCE = 2 V IC = 0.5 A; VCE = 2 V Transition frequency f = 1 MHz IC = 500 mA; VCE = 2V 1.5 0.5 1.25 10 20 160 150 –65 to +150 A A W mW/°C W mW/°C °C ºC °C/W °C/W 166 168 170 ICBO ICBO ICBO max. 0.1 max. – max. – – 0.1 – – – 0.1 IEBO max. 1.0 VCEO(sus)* VCBO VEBO min. min. min. VCEsat* max. 0.5 V VBE(on)* max. 0.95 V hFE* hFE* min. min. 40 15 fT min. 6.0 45 45 60 60 5.0 mA mA mA mA 80 80 V V V MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3