ERC20 (5A) ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ SC-46 Connection diagram Applications High speed switching 1 2 Maximum ratings and characteristics Absolute maximum ratings Item Symbol Conditions Rating -02 -04 -06 -08 Unit Repetitive peak reverse voltage VRRM 200 400 600 800 V Non-repetitive peak reverse voltage VRSM 250 450 650 850 V Average output current IO Square wave, duty=1/2, Tc=125°C 5 A Surge current IFSM Sine wave 10ms 70 A Operating junction temperature Tj -40 to +150 °C Storage temperature Tstg -40 to +150 °C Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Forward voltage drop VFM IFM=5.0A Reverse current IRRM VR=VRRM Reverse recovery time t rr IF=0.1A, IR=0.1A Thermal resistance Rth(j-c) Junction to case Max. -02 -04 -06 1.3 1.5 -08 Unit V 50 µA 400 ns 3.0 °C/W ERC20(5A) (200V to 800V / 5A ) Characteristics Forward characteristics Reverse characteristics 30 100 50 IF 10 30 5 10 3 [A] [µA] 1 1 0.5 0.3 0.5 0.3 0.1 5 3 IR 0.1 0.05 0.2 0.4 0.6 0.8 1.0 VF [V] 1.2 1.4 0.03 1.6 0 100 200 300 VR [V] Forward power dissipation Reverse characteristics 300 8 100 7 50 30 IR 10 [µA] 6 wF 5 [W] 5 3 4 3 1 0.5 2 0.3 1 0.1 0 200 300 400 500 600 700 0 800 0 1 2 3 4 5 6 7 8 IF(AV) [A] VR [V] Output current-case temperature Junction capacitance characteristics 100 160 50 140 TC [°C] 30 120 Cj [pF] 100 10 80 5 60 50 3 0 1 2 3 IO [A] 4 5 6 30 50 100 300 VR [V] 500 1000 ERC20(5A) (200V to 800V / 5A ) Surge capability 300 100 IFSM [A] 50 30 10 1 3 5 10 30 [time] (at 50Hz) Transient thermal impedance 101 [°C/W] 100 10-1 10-3 10-2 10-1 100 101 102 t [sec.] Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com