ETC HD74HCT1G86

HD74HCT1G86
2–input Exclusive–OR Gate
ADE-205-307B (Z)
3rd. Edition
April 2001
Description
The HD74HCT1G86 is high speed CMOS two input exclusive–OR gate using silicon gate CMOS process.
With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series. The internal
circuit of three stages construction with buffer provides wide noise margin and stable output.
Features
• The basic gate function is lined up as hitachi uni logic series.
• Supplied on emboss taping for high speed automatic mounting.
• TTL compatible input level.
Supply voltage range : 4.5 to 5.5 V
Operating temperature range : –40 to +85°C
• |IOH| = IOL = 2 mA (min)
Outline and Article Indication
• HD74HCT1G86
Index band
Marking
F
CMPAK–5
8
= Control code
(
or blank)
HD74HCT1G86
Function Table
Inputs
Output Y
A
B
L
L
L
L
H
H
H
L
H
H
H
L
H : High level
L : Low level
Pin Arrangement
IN B
1
IN A
2
GND
3
(Top view)
2
5
VCC
4
OUT Y
HD74HCT1G86
Absolute Maximum Ratings
Item
Symbol
Ratings
Unit
VCC
–0.5 to 7.0
V
VI
–0.5 to VCC + 0.5
V
VO
–0.5 to VCC + 0.5
V
Output : H or L
Input clamp current
I IK
±20
mA
VI < 0 or VI > VCC
Output clamp current
I OK
±20
mA
VO < 0 or VO >VCC
Continuous output current
IO
±25
mA
VO = 0 to VCC
Continuous current through I CC or IGND
VCC or GND
±25
mA
Maximum power dissipation PT
at Ta = 25°C (in still air) *3
200
mW
Storage temperature
–65 to 150
°C
Supply voltage range
Input voltage range
*1
Output voltage range
Notes:
*1, 2
Tstg
Test Conditions
The absolute maximum ratings are values which must not individually be exceeded, and
furthermore, no two of which may be realized at the same time.
1. The input and output voltage ratings may be exceeded if the input and output clamp-current
ratings are observed.
2. This value is limited to 5.5 V maximum.
3. The maximum package power dissipation was caluculated using a junction temperature of
150°C.
Recommended Operating Conditions
Item
Symbol
Min
Max
Unit
Supply voltage range
VCC
4.5
5.5
V
Input voltage range
VI
0
5.5
V
Output voltage range
VO
0
VCC
V
Output current
I OL
—
2
mA
I OH
—
–2
Input rise / fall time
(0.3 V to 2.7 V)
t r, t f
0
500
ns
Operating temperature
Ta
–40
85
°C
Test Conditions
VCC = 4.5 to 5.5 V
VCC = 4.5 to 5.5 V
VCC = 4.5 to 5.5 V
Note: Unused or floating inputs must be held high or low.
3
HD74HCT1G86
Electrical Characteristics
Item
Symbol VCC
(V)
Input voltage
Ta = 25°C
Min
Ta = –40 to 85°C Unit Test Conditions
Typ
Max
Min
Max
VIH
4.5 to 2.0
5.5
—
—
2.0
—
VIL
4.5 to —
5.5
—
0.8
—
0.8
4.5
4.4
4.5
—
4.4
—
4.5
4.18
4.31
—
4.13
—
4.5
—
0.0
0.1
—
0.1
I OL = 20 µA
4.5
—
0.17
0.26
—
0.33
I OL = 2 mA
Output voltage VOH
VOL
V
V
VIN =
I OH = –20 µA
VIH or VIL
I OH = –2 mA
Input current
I IN
5.5
—
—
±0.1
—
±1.0
µA
VIN = VCC or GND
Operating
current
I CC
5.5
—
—
1.0
—
10.0
µA
VIN = VCC or GND
Quiescent
supply current
I CCT
5.5
—
—
2.0
—
2.9
mA
One input V IN = 2.4 V,
other input VCC or GND
4
HD74HCT1G86
Switching Characteristics
Item
Symbol Ta = 25°C
Min
Typ
Max
Unit
Test Conditions
Output rise / fall time
t TLH
t THL
—
4
10
ns
Test circuit
Propagation delay time
t PLH
—
9.9
14
ns
Test circuit
t PHL
—
12.9
19
(CL = 15 pF, tr = tf = 6 ns, VCC = 5 V)
Item
Symbol
Ta = 25°C
Ta = –40 to 85°C Unit Test Conditions
VCC
Min
Typ
Max
Min
Max
Output rise / fall time
t TLH
t THL
4.5
—
14
25
—
31
ns
Test circuit
Propagation delay time
t PLH
4.5
—
10.1
18
—
22
ns
Test circuit
t PHL
4.5
—
16.0
29
—
33
Input capacitance
CIN
—
—
2.5
5
—
5
pF
Equivalent capacitance
CPD
—
—
10
—
—
—
pF
(CL = 50 pF, tr = tf = 6 ns)
Note: CPD is equivalent capacitance inside of the IC calculated from the operating current without load (see
test circuit). The average operating current without load is calculated according to the expression
below.
I CC (opr) = CPD • V CC • fIN + ICC
5
HD74HCT1G86
Test Circuit
VCC
Input
Pulse
generator
Output
50 Ω
CL
Note: 1. C L includes probe and jig capacitance.
• Waveforms
t r = 6 ns
t f = 6 ns
Input
3V
90%
90%
1.3 V
1.3 V
10%
10%
GND
t PHL
t PLH
VOH
In phase output
1.3 V
1.3 V
VOL
t TLH
t THL
90%
Out of phase output
90%
1.3 V
1.3 V
10%
t PHL
6
VOH
10%
t PLH
VOL
HD74HCT1G86
Package Dimensions
As of January, 2001
(0.65)
1.25 ± 0.1
(0.65)
0 – 0.1
(0.2)
2.0 ± 0.2
0.9 ± 0.1
(0.425)
5 – 0.2 ± 0.05
+ 0.1
0.15– 0.05
2.1 ± 0.3
1.3 ± 0.2
(0.425)
Unit: mm
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
CMPAK-5
—
Conforms
0.006 g
7
HD74HCT1G86
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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