ETC HVC383B

HVC383B
Variable Capacitance Diode for VCO
ADE-208-823(Z)
Rev. 0
Oct. 1999
Features
• High capacitance ratio. (n =2. 0.min)
• Low series resistance. (rs=0.5Ωmax)
• Good C-V linearity.
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVC383B
F4
UFP
Outline
Cathode mark
Mark
1
F4
2
1. Cathode
2. Anode
HVC383B
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
15
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse current
IR1
—
—
10
nA
VR = 15V
IR2
—
—
100
C1
19.0
—
21.0
C4
8.50
—
10.0
VR = 4V, f = 1 MHz
C7
4.50
—
5.5
VR = 7V, f = 1 MHz
n1
2.00
—
—
—
C1 / C4
n2
3.50
—
—
—
C1 / C7
rs
—
—
0.5
Ω
VR = 1V, f = 470 MHz
Capacitance
Capacitance ratio
Series resistance
Rev.0, Oct. 1999, page 2 of 5
VR = 15V, Ta =60°C
pF
VR = 1V, f = 1 MHz
HVC383B
Main Characteristic
40
-6
10
10
10
Capacitance C (pF)
Reverse current IR
(A)
10
f=1MHz
-7
-8
-9
-10
10
-11
30
20
Ta=75°C
10
10
Ta=50°C
-12
10
Ta=25°C
-13
0
10
10
0
4
8
12
16
20
Reverse voltage VR (V)
Fig.1 Reverse current Vs. Reverse voltage
-1
1.0
10
Reverse voltage VR (V)
Fig.2 Capacitance Vs. Reverse voltage
0.8
-0.2
f=470MHz
LF =∆(LogC)/∆(LogVR )
Series resistance rs (Ω )
0.6
0.4
0.2
10-1
1.0
Reverse voltage VR (V)
10
Fig.3 Series resistance Vs. Reverse voltage
-0.6
-1.0
-1.4
10-1
1.0
Reverse voltage VR (V)
10
Fig.4 LF Vs. Reverse voltage
Rev.0, Oct. 1999, page 3 of 5
HVC383B
Package Dimensions
Unit : mm
Cathode Mark
F4
1.2 ± 0.10
1.6 ± 0.10
2
0.3 ± 0.05
0.8 ± 0.10
1
0.6 ± 0.10
1. Cathode
2. Anode
Rev.0, Oct. 1999, page 4 of 5
Hitachi Code
JEDECCode
EIAJCode
Mass(g)
UFP
—
SC-79
0.0016
HVC383B
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
http://www.hitachi-eu.com/hel/ecg
http://sicapac.hitachi-asia.com
http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.0, Oct. 1999, page 5 of 5