1Mx32 bits PC133 SDRAM AIMM based on 1Mx32 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100BTWG Series DESCRIPTION The Hynix HYM4V33100BTWG Series are 1Mx32bits Synchronous DRAM Modules. The modules are composed of one 1Mx32bits CMOS Synchronous DRAMs in 400mil 86pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB. The Hyundai HYM4V33100BTWG Series are AGP In-line Memory Modules suitable for easy interchange and addition of 4Mbytes memory. The Hyundai HYM4V33100BTWG Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. FEATURES • PC133/PC100MHz support • Module bank : one physical bank • 132pin SDRAM • Auto refresh and self refresh • 1.4” (35.56mm) Height PCB with double sided com- • 4096 refresh cycles / 64ms • Programmable Burst Length and Burst Type AIMM ponents • Single 3.3±0.3V power supply • All device pins are compatible with LVTTL interface • Data mask function by DQM • SDRAM internal banks : two banks - 1, 2, 4 or 8 or Full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst • Programmable CAS Latency ; 2, 3 Clocks ORDERING INFORMATION Part No. Clock Frequency Internal Bank Ref. Power SDRAM Package Plating HYM4V33100BTWG-75 133MHz 2 Banks 4K Normal TSOP-II Gold This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1/Apr.01 PC133 SDRAM AIMM HYM4V33100BTWG Series PIN DESCRIPTION PIN PIN NAME CK0, CK1 Clock Inputs CKE Clock Enable /CS Chip Select BA SDRAM Bank Address A0 ~ A10 Address DESCRIPTION The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh Enables or disables all inputs except CK, CKE and DQM Selects bank to be activated during /RAS activity Selects bank to be read/written during /CAS activity Row Address : RA0 ~ RA10, Column Address : CA0 ~ CA7 Auto-precharge flag : A10 Row Address Strobe, Column /RAS, /CAS and /WE define the operation Address Strobe, Write Enable Refer function truth table for details DQM0~DQM3 Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode DQ0 ~ DQ31 Data Input/Output Multiplexed data input / output pin VCC Power Supply (3.3V) Power supply for internal circuits and input buffers VSS Ground Ground NC No Connection No connection /RAS, /CAS, /WE Rev. 0.1/Apr.01 2 PC133 SDRAM AIMM HYM4V33100BTWG Series PIN ASSIGNMENTS FRONT SIDE BACK SIDE FRONT SIDE BACK SIDE PIN NO. NAME PIN NO. NAME PIN NO. NAME PIN NO. NAME 1 NC 2 TYPEDET 67 NC 68 NC 3 NC 4 NC 69 NC 70 NC 5 GND 6 NC 71 GND 72 NC 7 NC 8 NC 73 NC 74 DQ27 9 VCC 10 DQM3 75 VCC 76 DQ28 11 NC 12 DQ24 77 DQ29 78 DQ30 13 GND 14 NC 79 GND 80 NC 15 DQ25 16 VCC 81 DQ31 82 VCC 17 DQ26 18 NC 83 DQM2 84 NC 19 GND 20 WE 85 GND 86 DQ23 21 FSEL 22 KEYWAY 87 DQ22 88 KEYWAY 23 KEYWAY 24 KEYWAY 89 KEYWAY 90 KEYWAY 25 KEYWAY 26 TCLK0 91 KEYWAY 92 DQ21 27 TCLK1 28 VCC 93 DQ20 94 VCC 29 CAS 30 NC 95 DQ19 96 DQ18 31 GND 32 NC 97 GND 98 NC 33 RAS 34 VDDQ 99 DQ17 100 VDDQ 35 A0 36 A9 101 DQ16 102 DQ15 37 GND 38 A11 103 GND 104 DQ14 39 A8 40 VDDQ 105 DQ13 106 VDDQ 41 A10 42 NC 107 DQ12 108 NC 43 GND 44 NC 109 GND 110 NC 45 VCC 46 A7 111 VCC 112 DQ11 47 CS 48 NC 113 VDDQ 114 NC 49 GND 50 A6 115 GND 116 NC 51 A1 52 VDDQ 117 DQ10 118 VDDQ 53 A5 54 A2 119 DQ9 120 DQ8 55 GND 56 A4 121 GND 122 DQM1 57 A3 58 VDDQ 123 DQ0 124 VDDQ 59 NC 60 DQ5 125 NC 126 DQ1 61 GND 62 DQ6 127 GND 128 DQ2 63 DQ7 64 VDDQ 129 DQ3 130 VDDQ 65 DQM0 66 NC 131 DQ4 132 NC Rev. 0.1/Apr.01 3 PC133 SDRAM AIMM HYM4V33100BTWG Series ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 °C Storage Temperature TS T G -55 ~ 125 °C Voltage on Any Pin relative to V S S V IN, V O U T -1.0 ~ 4.6 V Voltage on V D D relative to V S S VDD, VD D Q -1.0 ~ 4.6 V Short Circuit Output Current IO S 50 mA Power Dissipation PD 1 W Soldering Temperature ⋅ T i m e TSOLDER 260 ⋅ 10 °C ⋅ S e c Note : Operation at above absolute maximum rating can adversely affect device reliability. DC OPERATING CONDITION Parameter (T A = 0 t o 7 0 ° C ) Symbol Min Typ Max Unit Note Power Supply Voltage VD D , VDDQ 3.0 3.3 3.6 V 1 Input High voltage V IH 2.0 3.0 V DDQ + 0.3 V 1,2 Input Low voltage V IL -0.3 0 0.8 V 1,3 Note Note : 1.All voltages are referenced to VSS = 0 V 2.V IH( m a x ) i s a c c e p t a b l e 5 . 6 V A C p u l s e w i d t h w i t h < = 3 n s o f d u r a t i o n . 3 . V I L( m i n ) i s a c c e p t a b l e - 2 . 0 V A C p u l s e w i d t h w i t h < = 3 n s o f d u r a t i o n . A C O P E R A T I N G T E S T C O N D I T I O N (TA =0 t o 7 0° C , V D D = 3 . 3 ± 0 . 3 V , V S S = 0 V ) Parameter Symbol Value Unit AC Input High / Low Level Voltage V IH / V IL 2.4/0.4 V Vtrip 1.4 V tR / tF 1 ns Voutref 1.4 V CL 50 pF Input Timing Measurement Reference Level Voltage Input Rise / Fall Time Output Timing Measurement Reference Level Voltage Output Load Capacitance for Access Time Measurement 1 Note : 1 . O u t p u t l o a d t o m e a s u r e a c c e s s t i m e s i s e q u i v a l e n t t o t w o T T L g a t e s a n d o n e c a p a c i t o r ( 5 0 p F ) . F o r d e t a i l s , r e f e r t o A C / D C o u t p ut load circuit Rev. 0.1/Apr.01 4 PC133 SDRAM AIMM HYM4V33100BTWG Series CAPACITANCE ( T A = 2 5° C , f = 1 M H z ) -75 Parameter Pin Symbol Unit Min Max CK0, CK1 CI1 5 10 pF CKE0, CKE1 CI2 5 10 pF /S0, /S1 CI3 10 15 pF A0~10, BA0 CI4 10 20 pF /RAS, /CAS, /WE CI5 10 20 pF DQM0~DQM3 C I6 5 10 pF C I/O 5 15 pF Input Capacitance Data Input / Output Capacitance DQ0 ~ DQ31 OUTPUT LOAD CIRCUIT Vtt=1.4V RT=250 Ω Output Output 50pF DC Output Load Circuit Rev. 0.1/Apr.01 50 pF AC Output Load Circuit 5 PC133 SDRAM AIMM HYM4V33100BTWG Series ( T A = 0 t o 7 0 ° C , V DD =3.3 ± 0.3V) DC CHARACTERISTICS I Parameter Symbol Min. Max Unit Note Input Leakage Current IL I -8 8 uA 1 Output Leakage Current IL O -1 1 uA 2 Output High Voltage VOH 2.4 - V IO H = - 4 m A Output Low Voltage VOL - 0.4 V IO L = + 4 m A Note : 1 . V I N = 0 t o 3 . 6 V , A l l o t h e r p i n s a r e n o t t e s t e d u n d e r V IN = 0 V 2.DO U T is disabled, V O U T =0 to 3.6 DC CHARACTERISTICS II Speed Parameter Symbol Test Condition Unit Note mA 1 -75 Operating Current Precharge Standby Current in Power Down Mode ID D 1 Burst length=1, One bank active 220 t R C ≥ tR C ( m i n ) , I O L = 0 m A ID D 2 P C K E ≤ V IL ( m a x ) , t C K = m i n ID D 2 P S C K E ≤ V IL ( m a x ) , t C K = 2 mA ∞ 2 C K E ≥ V IH ( m i n ) , C S ≥ V I H ( m i n ) , t C K = m i n ID D 2 N Input signals are changed one time during in Non Power Down Mode ID D 2 N S Active Standby Current in Power Down Mode 40 2 c l k s . A l l o t h e r p i n s ≥ V D D - 0 . 2 V o r ≤ 0.2V Precharge Standby Current C K E ≥ V IH ( m i n ) , t C K = ∞ 30 Input signals are stable. ID D 3 P C K E ≤ V IL ( m a x ) , t C K = m i n ID D 3 P S C K E ≤ V IL ( m a x ) , t C K = mA 60 mA ∞ 60 C K E ≥ V IH ( m i n ) , C S ≥ V I H ( m i n ) , t C K = m i n ID D 3 N Input signals are changed one time during 100 2 c l k s . A l l o t h e r p i n s ≥ V D D - 0 . 2 V o r ≤ 0.2V Active Standby Current mA in Non Power Down Mode ID D 3 N S C K E ≥ V IH ( m i n ) , t C K = ∞ 60 Input signals are stable. Burst Mode Operating Current ID D 4 t C K ≥ t C K ( m i n ) , IO L = 0 m A All banks active Auto Refresh Current ID D 5 tR R C ≥ tR R C ( m i n ) , A l l b a n k s a c t i v e Self Refresh Current ID D 6 C K E ≤ 0.2V CL=3 220 mA 1 220 mA 2 4 mA 3 Note : 1. ID D 1 a n d I D D 4 depend on output loading and cycle rates. Specified values are measured with the output open 2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HYM4v33100BTWG-75 Rev. 0.1/Apr.01 6 PC133 SDRAM AIMM HYM4V33100BTWG Series AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) -75 Parameter Symbol Unit Min System Clock Cycle Time C A S Latency = 3 tCK3 Note Max 7.5 ns 1000 tCK2 10 Clock High Pulse Width tCHW 2.5 - ns 1 Clock Low Pulse Width tCLW 2.5 - ns 1 C A S Latency = 3 tAC3 - 5.4 ns C A S Latency = 2 tAC2 - 6 ns Access Time From Clock C A S Latency = 2 ns 2 Data-Out Hold Time tOH 2.7 - ns Data-Input Setup Time tDS 1.5 - ns 1 Data-Input Hold Time tDH 0.8 - ns 1 Address Setup Time tAS 1.5 - ns 1 Address Hold Time tAH 0.8 - ns 1 CKE Setup Time tCKS 1.5 - ns 1 CKE Hold Time tCKH 0.8 - ns 1 Command Setup Time tCS 1.5 - ns 1 Command Hold Time tCH 0.8 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1 - ns CLK to Data Output in High-Z C A S Latency = 3 tOHZ3 2.7 5.4 ns Time C A S Latency = 2 tOHZ2 3 6 ns Note : 1.Assume tR / tF (input rise and fall time ) is 1ns If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter 2.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter Rev. 0.1/Apr.01 7 PC133 SDRAM AIMM HYM4V33100BTWG Series AC CHARACTERISTICS II -75 Parameter Symbol Unit Min Max Operation tRC 65 - ns Auto Refresh tRRC 65 - ns R A S to C A S Delay tRCD 20 - ns R A S Active Time tRAS 45 100K ns RAS Precharge Time tRP 20 - ns R A S to R A S Bank Active Delay tRRD 15 - ns C A S to C A S Delay tCCD 1 - CLK Write Command to Data-In Delay tWTL 0 - CLK Data-In to Precharge Command tDPL 2 - CLK Data-In to Active Command tDAL 5 - CLK DQM to Data-Out Hi-Z tDQZ 2 - CLK DQM to Data-In Mask tDQM 0 - CLK MRS to New Command tMRD 2 - CLK C A S Latency = 3 tPROZ3 3 - CLK C A S Latency = 2 tPROZ2 2 - CLK Power Down Exit Time tPDE 1 - CLK Self Refresh Exit Time tSRE 1 - CLK Refresh Time tREF - 64 ms Note R A S Cycle Time Precharge to Data Output Hi-Z 1 Note : 1. A new command can be given tRRC after self refresh exit Rev. 0.1/Apr.01 8 PC133 SDRAM AIMM HYM4V33100BTWG Series DEVICE OPERATING OPTION TABLE HYM4V33100BTWG-75 C A S Latency tRCD tRAS tRC tRP tAC tOH 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns 133MHz(7.5ns) COMMAND TRUTH TABLE Command A10/ CKEn-1 CKEn CS RAS CAS WE DQM Mode Register Set H X L L L L X OP code H X X X No Operation H X X X L H H H Bank Active H X L L H H X H X L H L H X ADDR RA Read BA Note V L CA Read with Autoprecharge V H Write L H X L H L L X CA Write with Autoprecharge H X L L H L X Precharge selected Bank Burst Stop H DQM H Auto Refresh H H L L L Entry H L L L X L H H H X Exit L H L X L V X V X H X X L H X X X X X L H H H H X X X Precharge L H H H power down H X X X L H H H H X X X L V V V H H X X X Self Refresh1 Entry V H Precharge All Banks L X X Exit Clock AP Entry L H H L Suspend Exit L X H X X X X Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high 2 . X = D o n′ t c a r e , H = L o g i c H i g h , L = L o g i c L o w . B A = B a n k A d d r e s s , R A = R o w A d d r e s s , C A = C o l u m n A d d r e s s , Opcode = Operand Code, NOP = No Operation Rev. 0.1/Apr.01 9 PC133 SDRAM AIMM HYM4V33100BTWG Series PACKAGE DEMENSION ￠3.175 x4 x Rev. 0.1/Apr.01 10