The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2002. INCH-POUND MIL-PRF-19500/392F 5 April 2002 SUPERSEDING MIL-PRF-19500/392E 6 June 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE 2N3485A, 2N3486A, JAN, JANTX AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (T0-46). 1.3 Maximum ratings. PT VCBO VCEO VEBO IC Top and TST RθJC RθJA V dc 60 V dc 60 V dc 5 mA dc 600 °C -65 TO +200 °C /W 87 °C /mW 0.325 TA =+25°C TC = +25°C (1) (2) W 0.5 W 2.0 (1) Derate linearly at 3.08 mW/°C above TA = +37.5°C. (2) Derate linearly at 11.43 mW/°C above TC = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/392F 1.4 Primary electrical characteristics. hFE2 VCE = 10 V dc IC = 1.0 mA dc hFE4 VCE = 10 V dc IC = 150 mA dc (1) Min Max 2N3485A 2N3486A 2N3485A 2N3486A 40 100 40 100 120 300 Cobo |hfe| VCE = 20 V dc 100 kHz ≤ f ≤ IC = 50 mA dc 1 Mhz f = 100 MHz VCB = 10 V dc IE = 0 2.0 10 Switching ton toff ton + toff (nonsaturated) pF ns 2N3485A 2N3486A ns 8 45 175 200 18 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2 MIL-PRF-19500/392F FIGURE 1. Physical dimensions - TO-46. 3 MIL-PRF-19500/392F Symbol CD CH HD LC LD LL LU L1 L2 Q r TL TW α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .065 .085 1.65 2.16 .209 .230 5.31 5.84 .100 TP 2.54 TP .021 .53 .500 .750 12.70 19.05 .016 .019 .41 .48 .050 1.27 .250 6.35 .040 1.02 .010 .25 .028 .048 .71 1.22 .036 .046 .91 1.17 45° TP 45° TP Notes 6 7 7 7 7 7 7 10 3 6 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .008 inch (0.041 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions - TO-46 – Continued. 4 MIL-PRF-19500/392F 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (T0-46 ) herein. 3.5 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in paragraphs 4.4.2 and 4.4.3 herein. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.4.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of group E tests, the tests specified in group E herein shall be performed by the first inspection lot to this revision to maintain qualification. 5 MIL-PRF-19500/392F * 4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurements JANTX & JANTXV levels 3c Thermal impedance, method 3131 of MIL-STD-750. 9 Not applicable. 10 24 hours minimum. 11 ICBO2, hFE4 12 See 4.3.1, t = 80 hours minimum 13 Subgroup 2 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc whichever is greater. ∆hFE4 = ± 15 percent. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the general requirements of MIL-STD-750, section 4.5: VCB = 10 - 30 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power dissipation of PD = 75 percent of the maximum rated PT as defined in 1.3. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. See 4.4.2.1 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.1 and shall be in accordance with group A, subgroup 2 and 4.5.2 herein. 6 MIL-PRF-19500/392F 4.4.2.1 Group B inspection, (JAN, JANTX, and JANTXV. 1/ Step Method Condition 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall be applied to achieve TJ = 150°C minimum and a minimum power dissipation PD = 75 percent of maximum rated PT as defined in 1.3 herein. n = 45, c = 0. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High- temperature life (non-operating), TA = +200°C, t = 340 hours, n = 22, c = 0. 4.4.2.2 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements.: a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified in 4.4.3.1 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein. 4.4.3.1 * Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method C2 2036 Test condition E. C5 3131 RθJC = 87°C/W. C6 Condition Not applicable. 4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. __________ 1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. 7 MIL-PRF-19500/392F * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) and delta measurements shall be in accordance with the applicable steps of 4.5.2 and table I subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Delta requirements. Delta requirements shall be as specified below: Step Inspection MIL-STD-750 Method Symbol Limit Conditions 1 Collector-base cutoff current 3036 Bias condition D, VCB = 50 V dc ∆ICB02 (1) 100 percent of initial value or ± 5 nA dc, whichever is greater. 2 Forward current transfer ratio 3076 VCE = 10 V dc; IC = 150 mA dc; pulsed see 4.5.1 ∆hFE4 (1) ±25 percent change from initial reading. (1) Devices which exceed the group A limits for this test shall not be accepted. 8 MIL-PRF-19500/392F TABLE I. Group A inspection. * Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 1 2/ Visual and mechanical inspection 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements Group A, subgroup 2 Bond strength 3/ 2037 Precondition TA = + 250°C at t = 24 hours or TA = + 300°C at t = 2 hours n = 11 wires, c = 0 Decap internal visual (design verification) 2075 n = 4, c = 0 Collector to base cutoff current 3036 Bias condition D; VCB = 60 V dc ICBO1 10 µA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 5 V dc IEBO1 10 µA dc Breakdown voltage, collector to emitter 3011 Bias condition. D; IC = 10 mA dc; pulsed (see 4.5.1) V(BR)CEO Collector to base cutoff current 3036 Bias condition D; VCB = 50 V dc ICBO2 Subgroup 2 See footnotes at end of table. 9 60 V dc 10 nA dc MIL-PRF-19500/392F TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued. Emitter to base cutoff current 3061 Bias condition D; VEB = 3.5 V dc IEBO2 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 0.1 mA dc hFE1 2N3485A 2N3486A Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 1.0 mA dc hFE2 40 100 3076 VCE = 10 V dc; IC = 10 mA dc hFE3 40 100 2N3485A 2N3486A Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 150 mA dc pulsed (see 4.5.1) hFE4 40 100 2N3485A 2N3486A Forward-current transfer ratio nA dc 40 75 2N3485A 2N3486A Forward-current transfer ratio 50 3076 VCE = 10 V dc; IC = 500 mA dc pulsed (see 4.5.1) 120 300 hFE5 2N3485A 2N3486A 40 50 Saturation voltage and resistance 3071 IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VCE(SAT)1 0.4 V dc Saturation voltage and resistance 3071 IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VCE(SAT)2 1.6 V dc See footnotes at end of table. 10 MIL-PRF-19500/392F TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Symbol Limit Min Unit Method Conditions Max Base-emitter voltage (saturated) 3066 Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VBE(SAT)1 1.3 V dc Base-emitter voltage (saturated) 3066 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VBE(SAT)2 2.6 V dc ICBO3 10 µAdc Subgroup 2 - Continued. Subgroup 3 High - temperature operation TA = +150°C Collector - base cutoff current Bias condition D; VCB = 50 V dc Low - temperature operation TA = -55°C Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 1.0 mA dc hFE6 20 40 2N3485A 2N3486A Subgroup 4 Small signal short circuit forward current transfer ratio 3206 VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz hfe 40 100 2N3485A 2N3486A Magnitude of small signal short-circuit forward-current transfer ratio 3306 VCE = 20 V dc; IC = 50 mA dc; f = 100 MHz |hfe| Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo See footnotes at end of table. 11 2.0 10 8 pF MIL-PRF-19500/392F TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Symbol Limit Min Unit Method Conditions Max 3240 VEB = 2.0 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz Cibo 30 pF Turn-on time (See figure 2) ton 45 ns Turn-off time (See figure 3) toff Subgroup 4 - Continued. Input capacitance (output open-circuited) 2N3485A 2N3486A Pulse response (nonsaturated) ns 175 200 (See figure 4) ton + toff 18 ns Subgroup 5, 6 and 7 Not applicable 1/ For sampling plan see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. Subgroups 1 and 7 may be performed simultaneously. 4/ Not required for laser marked devices. 12 MIL-PRF-19500/392F TABLE II. Group E inspection (all quality levels) – for qualification only. * Inspection MIL-STD-750 Method Conditions Subgroup 1 Temperature cycling (air to air) Qualification 45 devices c=0 1051 Test condition C, 500 cycles Hermetic seal Fine leak Gross leak 1071 Electrical measurements See group A, subgroup 2 and 4.5.2 herein. 45 devices c=0 Subgroup 2 Intermittent life 1037 Electrical measurements VCB = 10 V dc, 6,000 cycles. See group A, subgroup 2 and 4.5.2 herein. Subgroups 3. 4, 5, 6 and 7 Not applicable Subgroup 8 Reverse stability 1033 Condition A for devices ≥ 400 V Condition B for devices < 400 V 13 45 devices c=0 MIL-PRF-19500/392F NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be ≤ 2.0 ns; duty cycle ≤ 2 percent; generator source impedance shall be 50 ohms. 2. Output sampling oscilloscope: Zin ≥ 100 kΩ; Cin ≤ RPF; rise time ≤ 0.2 ns. FIGURE 2. Saturated turn-on switching time test circuit. NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be ≤ 2.0 ns; duty cycle ≤ 2 percent; generator source impedance shall be 50 ohms. 2. Output sampling oscilloscope: Zin ≥ 100 kΩ; Cin ≤ RPF; rise time ≤ 0.2 ns. FIGURE 3. Saturated turn-off switching time test circuit. 14 MIL-PRF-19500/392F NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be ≤ 2.0 ns; duty cycle ≤ 2 percent; generator source impedance shall be 50 ohms. 2. Output sampling oscilloscope: Zin ≥ 100 kΩ; Cin ≤ RPF; rise time ≤ 0.2 ns. FIGURE 4. Nonsaturated turn-on switching time test circuit. 15 MIL-PRF-19500/392F 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and, if required, the specified issue of individual documents referenced (see 2.2.1). c. Lead finish (see 3.4.1). d. Type designation and quality assurance level. e. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. 16 MIL-PRF-19500/392F Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2561) Review activities: Army - AV, MI, SM Navy - AS, MC Air Force - 19, 71, 99 17 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/392F 2. DOCUMENT DATE 5 April 2002 1. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE 2N3485A, 2N3486A, JAN, JANTX AND JANTXV 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99