205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V Gate Emitter Leakage Current, VGE=+/-15V, VCE=0V ON CHARACTERISTICS Gate Threshold Voltage, VCE=VGE, IC=6mA Collector Emitter Saturation Voltage, VGE=15V, Ic=200A DYNAMIC CHARACTERISTICS Fwd. Transconductance VCE=5V, IC=200A Input Capacitance VGE=0 Output Capacitance VCE=25V Rev. Transfer Capacitance f=1.0MHz SWITCHING INDUCTIVE LOAD CHARACTERISTICS Turn-On Delay Time Rise Time VCC= 600V, IC=200A Turn-on Losses VGE=+15/-10V, RG=5.1Ω Turn-off Delay Time L=100µH Fall Time Turn-off Losses DIODE CHARACTERISTICS Maximum Forward Voltage Reverse Recovery Characteristics IF=200A, Tj=25°C Tj=125°C VR=600V, Tj=25°C IF=200A, Tj=125°C dI/dt=-1500A/µS Tj=25°C Tj=125°C Tj=25°C Tj=125°C THERMAL AND MECHANICAL CHARACTERISTICS Thermal Resistance, Junction to Case (Per IGBT) Thermal Resistance, Junction to Case (Per Diode) Maximum Junction Temperature Isolation Voltage Screw Torque Mounting Screw Torque (M6) Terminals Screw Torque (M3) Terminals Module Weight 12/08/98 Rev. C Symbol Min. Typ. VCES ICES IGES 1200 VGE(TH) VCE(SAT) 4.5 5.5 2.5 gfs Cies Coes Cres 50 69 17 5 2 Max Unit V µA µA 10 100 6.5 3.0 V V S nF nF nF t(on) tr Eon 175 140 28 400 nS nS mJ td(off) tf Eoff 720 120 15 850 nS nS mJ VF 2.0 1.8 10 15 75 95 100 150 2.8 2.3 V Qrr Irr trr RthJC RthJC TjMAX VisRMS - 15 10 6 320 µC A nS 0.07 0.12 150 2500 20 12 8 °C/W °C/W °C V in-lb in-lb in-lb Grams 1 205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com OM200F120CMD IGBT Collector Current vs. Collector-emitter Voltage Tj=- 55°C IGBT Collector Current vs. Collector-emitter Voltage Tj=25°C 400 400 Vge=13V Vge=13V Vge=15V Vge=15V Vge=11V Vge=11V 300 300 Ic(A) Ic(A) 200 200 Vge=9V Vge=9V 100 100 Vge=7V Vge=7V 0 0 0 2 4 6 8 10 0 12 2 4 6 Vce(V) Vce(V) 8 10 12 Switching energy vs Temperature Vce =600V,Ic=200A IGBT Collector Current vs. Collector-emitter Voltage Tj=125°C 50 400 Vge=13V Vge=11V Eoff 40 Vge=15V Eon Energyf (mJ) 300 Ic(A) 200 Vge=9V 30 20 100 10 Vge=7V Vge=5V 0 0 0 2 4 6 8 10 12 0 Vce(V) 25 50 75 100 125 150 T(°C) Switching energy vs Gate Resistor(Rg) Vce =600V,Ic=200A, Tj=125°C Switching energy vs Collector current (Ic) Vce =600V,Tj=25°C 50 50 40 40 Eoff Energyf (mJ) Energy (mJ) Eon 30 20 10 30 20 10 Eoff Eon 0 0 0 5 10 15 20 25 0 12/08/98 25 50 75 100 125 150 175 200 Ic(A) Rg(Ohms) Rev. C 2 205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com OM200F120CMD Diode Forward Current vs. Forward Voltage Vge =0V 400 Tj=-55°C 300 Tj=25°C Tj=125°C If (A) 200 100 0 0 0.5 1 1.5 2 2.5 Vf (V) 12/08/98 Rev. C 3 205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com OM200F120CMD MECHANICAL OUTLINE G2 E2 C2E1 E2 E1 C1 G1 EQUIVALENT CIRCUIT C1 G1 E1 C2E1 G2 E2 E2 12/08/98 Rev. C 4