ETC RT9131

RT9131
Preliminary
Class AB Stereo Headphone Drive with Mute
Features
General Description
High Signal-to-Noise Ratio
High Slew Rate
Low Distortion
Large Output Voltage Swing
Flexible Mute Function
Excellent Power Supply Ripple Rejection
Low Power Consumption
Short-circuit Elimination
Wide Temperature Range
No Switch ON/OFF Clicks
Integrated Voltage Divider (VDD/2) to Eliminate
External Resistors
The RT9131 is an integrated class AB stereo
headphone driver contained in a SOP-8 or DIP-8
plastic package with Mute feature. A class AB output
stage bias control circuit is employed to maintain low
audio signal distortion and power consumption. The
RT9131 further integrates a voltage divider inside
the chip. Thus, the external resistors can be
eliminated. The device is fabricated in a CMOS
process and has been primarily developed for
portable digital audio applications.
Ordering Information
RT9131
Applications
PackageType
Portable Digital Audio
N : DIP-8
S : SOP-8
Operating Tmperature Rnge
C: Commercial Standard
Pin Configurations
Part Number
TOP VIEW
RT9131CN
(Plastic DIP-8)
Marking Information
Part Number
Pin Configurations
Marking
RT9131CN
RT9131CN
RT9131CS
RT9131CS
RT9131CS
(Plastic SOP-8)
OUTA 1
8 VDD
MUTE 2
7 OUTB
INA 3
6 BIAS
GND 4
5 INB
Typical Application Circuit
220µF
+
+
C7
R1
VMUTE
H: Speaker Action
L: Mute On
VINA
1
100K
VDD
8
C4
4 GND
INB 5
220µF
VDD
+C5
4.7µF
1µF
VINB
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C6
2 MUTE OUTB 7
RT9131
6
3 INA
BIAS
C2
2.2µF
OUTA
C3
+C1
100µF
2.2µF
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1
RT9131
Preliminary
Absolute Maximum Ratings
Supply Voltage
Operating Ambient Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation, PD @ TA= 25°C
DIP-8
SOP-8
Package Thermal Resistance
DIP-8, θJA
SOP-8, θJA
Electrostatic Discharge
7V
-40°C to 85°C
150°C
-60°C to 150°C
1.25W
0.625W
100°C/W
160°C/W
(1)
-3000 to 3000V
(2)
-200 to 200V
Notes: (1) Human body mode: C = 100pF, R = 1500Ω, 3 positive pulses plus 3 negative pulses
(2) Machine mode: C = 200pF, L = 0.5mH, R = 0Ω, 3 positive pulses plus 3 negative pulses
Electrical Characteristics
(VIN = 0dbV, VCC = 5V, TA = 25°C, f = 1kHz, RL = 32Ω, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
3
--
6
V
--
3.6
6
mA
Operating VDD Range
VDD
Quiescent Current
IQ
Mute Terminal Voltage
VMUTE
0.3
0.7
1.6
V
Voltage Gain
AV
-2
--
2
dB
Differential Channel Voltage Gain
∆AV
-0.5
--
0.5
dB
VIN = 0Vms
Total Harmonic Channel Distortion Factor THD
RW = 20 ~ 20kHz
--
0.02
0.1
%
Rated Output Power 1
PO
RL = 32Ω, THD < 0.1%
25
31
--
mW
Rated Output Power 2
PO
RL = 16Ω, THD < 0.1%
50
62
--
mW
Output Noise Voltage
BW = 20 ~ 20kHz, RG = 0Ω
--
-93
--
dBv
Channel Separation
RG = 0Ω
--
75
--
dB
Mute Attenuation
RG = 0Ω
--
60
--
dB
fRR = 100Hz, fRR = -20dBv
--
-57
--
dB
Ripple Rejection
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2
PSRR
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RT9131
Preliminary
Function Block Diagram
OUTA
MUTE
1
2
INA 3
GND
8
4
50K
_ +
50K
+ _
7
6
5
VDD
OUTB
BIAS
INB
Pin Description
Pin No.
Pin Name
Pin Function
1
OUTA
Channel A Output
2
MUTE
Mute Control Input
3
INA
Channel A Input
4
GND
Ground
5
INB
Channel B Input
6
BIAS
VDD/2 Connected a Capacitor to GND to Reduce Power On/Off Clicks
7
OUTB
Channel B Output
8
VDD
Power Supply Input
DS9131-01 November 2002
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RT9131
Preliminary
Typical Operating Characteristics
Quiescent Current
Mute: OFF
2
PSRR
-20
VDD = 5V
RL = 32Ω
-30
C4=0.1µF
-40
PSRR (dB)
Quiescent Current (mA)
2.5
1.5
1
Mute: ON
0.5
C4=1µF
-50
-60
-70 C4=4.7µF
0
-80
0
1
2
3
4
5
10
6
100
Supply Voltage (V)
0
Power ON (V)
-100
5
0
20
0
Power ON (V)
-100
Without R1 and C4
4
Power OFF
4
2
0
Time: 100mS/Div
Output Voltage Transient
Power OFF (V) Output Voltage
Transient (mV)
Output Voltage
Transient (mV)
100
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10M
-20
Output Voltage Transient
Time: 10mS/Div
1M
0
Time: 10mS/Div
0
100K
Output Voltage Transient
Power OFF (V) Output Voltage
Transient (mV)
Output Voltage
Transient (mV)
Power ON
5
10K
Frequency (Hz)
Output Voltage Transient
100
1K
20
0
-20
4
Without R1 and C4
2
0
Time: 100mS/Div
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RT9131
Preliminary
THD+N vs. Output Power
VDD = 5V
f = 100Hz
100 RL = 32Ω
0
0
10 0
VDD = 3V
f = 100Hz
RL = 32Ω
5
THD+N (%)
5
THD+N (%)
THD+N vs. Output Power
0
0
2
1
5
2
1
5
2
2
0.1
0.1
5
5
2
0.01
0.01
100µ
1m
10m
2
100µ
100m
1m
Output Power (W)
THD+N vs. Output Power
0
0
10 0
100m
THD+N vs. Output Power
0
VDD = 5V
f = 1kHz
RL = 32Ω
0
10 0
5
VDD = 3V
f = 1kHz
RL = 32Ω
5
THD+N (%)
THD+N (%)
10m
Output Power (W)
2
1
5
2
0.1
2
1
5
2
0.1
5
5
2
2
0.01
100µ
1m
10m
0.01
100µ
100m
1m
10m
100m
Output Power (W)
Output Power (W)
THD+N vs. Output Power
THD+N vs. Output Power
0
10
VDD = 5V
f = 10kHz
RL = 32Ω
0
100
VDD = 3V
f = 10kHz
RL = 32Ω
THD+N (%)
THD+N (%)
5
1
2
1
5
2
0.1
0.1
5
2
0.01
100µ
1m
10m
Output Power (W)
DS9131-01 November 2002
100m
0.01
100µ
1m
10m
100m
Output Power (W)
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5
RT9131
Preliminary
THD+N vs. Output Power
THD+N vs. Output Power
VDD = 3V
f = 100Hz
10
RL = 16Ω
THD+N (%)
THD+N (%)
VDD = 5V
f = 100Hz
10 R = 16Ω
L
1
0.1
1
0.1
0.01
0.01
100µ
1m
10m
100m
100µ
1m
Output Power (W)
0
VDD = 5V
f = 1kHz
100 R = 16Ω
L
VDD = 3V
f = 1kHz
100 R = 16Ω
L
0
0
5
THD+N (%)
THD+N (%)
5
2
1
5
2
0.1
2
1
5
2
0.1
5
5
2
2
0.01
0.01
100µ
1m
10m
100m
100µ
1m
Output Power (W)
THD+N (%)
THD+N (%)
VDD = 3V
f = 10kHz
10 R = 16Ω
L
1
1
0.1
0.1
1m
10m
Output Power (W)
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100m
THD+N vs. Output Power
VDD = 5V
f = 10kHz
RL = 16Ω
0.01
100µ
10m
Output Power (W)
THD+N vs. Output Power
6
100m
THD+N vs. Output Power
THD+N vs. Output Power
0
10
10m
Output Power (W)
100m
0.01
100µ
1m
10m
100m
Output Power (W)
DS9131-01 November 2002
RT9131
Preliminary
THD+N vs. Output Voltage
THD+N vs. Output Voltage
VDD = 3V
f = 100Hz
10 RL = 32Ω
THD+N (%)
THD+N (%)
VDD = 5V
f = 100Hz
10 R = 32Ω
L
1
0.1
1
0.1
0.01
-40
-25
-10
0.01
-40
+5
-25
Output Voltage (dB)
-10
+5
Output Voltage (dB)
THD+N vs. Output Voltage
THD+N vs. Output Voltage
0
0
5
THD+N (%)
THD+N (%)
100
VDD = 3V
f = 1kHz
10 RL = 32Ω
VDD = 5V
f = 1kHz
RL = 32Ω
2
1
5
1
2
0.1
0.1
5
2
0.01
-40
-25
-10
0.01
-40
+5
-25
THD+N vs. Output Voltage
THD+N vs. Output Voltage
VDD = 5V
f = 10kHz
100 RL = 32Ω
VDD = 3V
f = 10kHz
100
RL = 32Ω
0
0
THD+N (%)
5
THD+N (%)
+5
0
0
2
1
5
5
2
1
5
2
2
0.1
0.1
5
5
2
2
0.01
0.01
-40
-10
Output Voltage (dB)
Output Voltage (dB)
-25
-10
Output Voltage (dB)
DS9131-01 November 2002
+5
-40
-25
-10
+5
Output Voltage (dB)
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7
RT9131
Preliminary
THD+N vs. Output Voltage
THD+N vs. Output Voltage
0
VDD = 3V
f = 100Hz
10 RL = 16Ω
VDD = 5V
f = 100Hz
RL = 16Ω
0
100
THD+N (%)
THD+N (%)
5
2
1
5
1
2
0.1
0.1
5
2
0.01
-40
-25
-10
0.01
-40
+5
-25
-10
+5
Output Voltage (dB)
Output Voltage (dB)
THD+N vs. Output Voltage
THD+N vs. Output Voltage
0
0
100
VDD = 3V
f = 1kHz
10 RL = 16Ω
VDD = 5V
f = 1kHz
RL = 16Ω
THD+N (%)
THD+N (%)
5
2
1
5
1
2
0.1
0.1
5
2
0.01
-40
-25
-10
0.01
-40
+5
-25
-10
+5
Output Voltage (dB)
Output Voltage (dB)
THD+N vs. Output Voltage
THD+N vs. Output Voltage
0
0
100
VDD = 5V
f = 10kHz
RL = 16Ω
VDD = 3V
f = 10kHz
10 RL = 16Ω
THD+N (%)
THD+N (%)
5
2
1
5
2
0.1
1
0.1
5
2
0.01
-40
-25
-10
Output Voltage (dB)
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8
+5
0.01
-40
-25
-10
+5
Output Voltage (dB)
DS9131-01 November 2002
RT9131
Preliminary
THD+N vs. Frequency
THD+N vs. Frequency
0
0
5
2
5
VDD = 5V
RL = 32Ω
1
1
5
THD+N (%)
5
THD+N (%)
VDD = 5V
RL = 16Ω
2
2
0.1
5
2
2
0.1
5
2
0.01
0.01
5
5
2
2
0.001
10
100
1k
Frequency (Hz)
0.001
10
10k
100
1k
10k
Frequency (Hz)
Noise
Noise
u
VDD = 5V
RL = 32Ω
u
u
VDD = 5V
RL = 32Ω
15 u
Output Level (µV)
Output Level (µV)
15
u
Channel A
10
5
u
u
u
u
10 u
Channel B
u
u
u
u
5u
u
u
u
u
0
10
100
1k
00
10
10k
100
0
0
Output Noise Density (dB)
Output Noise Density (dB)
VDD = 5V
RL = 32Ω
0
-80
0
-1000
0
-1200
Channel A
0
-1400
VDD = 5V
RL = 32Ω
0
-80
0
-1000
0
-1200
Channel B
0
-1400
0
0
-1600
10k
Noise
Noise
0
0
1k
Frequency (Hz)
Frequency (Hz)
10
100
1k
Frequency (Hz)
DS9131-01 November 2002
10k
-1600
10
100
1k
10k
Frequency (Hz)
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9
RT9131
Frequency Response
VDD = 5V
RL = 32Ω
THD+N (%)
-40
Channel A
-80
-3
-3
-7
-7
VDD = 5V
RL = 32Ω
Channel B
-120
10
+1
+1
-11
100
1k
10k
10
100
1k
Output Level B (dB)
Crosstalk
Output Level A (dB)
+0
Preliminary
-11
10k
Frequency (Hz)
Frequency (Hz)
Mute Function
Mute Attenuation
5
7
0
0
0
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9
-100
Channel B
0
2
Channel A
3
4
-105 5
6
7
8
9
Time: 1mS/Div
10
VDD = 5V
RL = 32Ω
8
Output Attenuation (dB)
Mute
Voltage
(5V/Div)
Output
Voltage
(2V/Div)
Input
Voltage
(2V/Div)
-95 6
-110 0
10
100
1k
10k
Frequency (Hz)
DS9131-01 November 2002
RT9131
Preliminary
Package Information
A
B
E
J
C L
I
D
Symbol
F
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
9.068
9.627
0.357
0.379
B
6.198
6.604
0.244
0.260
C
4.318
0.170
D
0.356
0.559
0.014
0.022
E
1.397
1.651
0.055
0.065
F
2.337
2.743
0.092
0.108
I
3.048
3.556
0.120
0.140
J
7.366
8.255
0.290
0.325
L
0.381
0.015
8-Lead DIP Plastic Package
DS9131-01 November 2002
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11
RT9131
Preliminary
H
A
M
J B
F
C
D
Symbol
I
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
4.801
5.004
0.189
0.197
B
3.810
3.988
0.150
0.157
C
1.346
1.753
0.053
0.069
D
0.330
0.508
0.013
0.020
F
1.194
1.346
0.047
0.053
H
0.178
0.254
0.007
0.010
I
0.102
0.254
0.004
0.010
J
5.791
6.198
0.228
0.244
M
0.406
1.270
0.016
0.050
8–Lead SOP Plastic Package
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DS9131-01 November 2002
Preliminary
DS9131-01 November 2002
RT9131
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13
RT9131
Preliminary
RICHTEK TECHNOLOGY CORP.
RICHTEK TECHNOLOGY CORP.
Headquarter
Taipei Office (Marketing)
5F, No. 20, Taiyuen Street, Chupei City
8F-1, No. 137, Lane 235, Paochiao Road, Hsintien City
Hsinchu, Taiwan, R.O.C.
Taipei County, Taiwan, R.O.C.
Tel: (8863)5526789 Fax: (8863)5526611
Tel: (8862)89191466 Fax: (8862)89191465
Email: [email protected]
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14
DS9131-01 November 2002