ETC DL-3147-141_-241

Ordering number : EN5863A
DL-3147-141(-241)
Red Laser Diode
DL-3147-141(-241)
Index Guided AlGaInP Laser Diode
Overview
Package Dimensions
DL-3147-141(-241) is index guided 645 nm (Typ.) AlGaInP laser diode
with low threshold current and high operating temperature. The low
threshold current and high operating temperature are achieved by a
strained multiple quantum well active layer. DL-3147-141(-241) is
suitable for applications such as bar-code scanners, optical disc systems
and other optical information systems.
Tolerance : ±0.2
Unit
: mm
0
ø5.6 – 0.025
ø4.4
ø3.55±0.1
ø1.6
Effective window diameter 1.0min.
1
3
Features
1.0±0.1
Symbol
Ratings
Unit
Light Output
Po
7
mW
2
VR
PIN
3.5±0.5
1.2±0.1
0.25
3–ø0.45±0.1
Parameter
Laser
ø1.4max.
Pin No.
Electrical Connection
1
30
Topr
---10 to +60
°C
Storage Temperature
Tstg
---40 to +85
°C
1 2 3 ø2.0
5.6mm ø stem
V
Operating Temperature
6.5±1.0
Absolute Maximum Ratings at Tc=25°C
Reverse Voltage
LD facet
0.5max.
1.27±0.08
• Short wavelength
: 645 nm (Typ.)
• Low threshold current
: Ith = 45 mA (Typ.)
• High operating temperature : 5 mW at 60°C
• TE mode
0.4±0.1
Top view
2
3
LD
1
PD
3
LD
PD
2
2
2 power supply system + power supply system
Parameter
Threshold Current
Operating Current
Operating Voltage
Lasing Wavelength
Beam ❊) Perpendicular
Divergence
Parallel
Off Axis
Perpendicular
Angle
Parallel
Differential Efficiency
Monitoring Output Current
Astigmatism
❊) Full angle at half maximum
Symbol
Ith
Iop
Vop
λp
θ⊥
θ //
∆θ ⊥
∆θ //
dPo/dIop
Im
As
Condition
CW
Po=5mW
Po=5mW
Po=5mW
Po=5mW
Po=5mW
------Po=5mW
Po=5mW
-241
-141
Electrical and Optical Characteristics at Tc=25°C
Min.
--------25
6
----0.15
0.05
----
Typ.
45
60
2.2
645
30
7.5
----0.35
0.15
8
Max.
65
80
2.5
655
40
10
±3
±2
----
Unit
mA
mA
V
nm
deg.
deg.
deg.
deg.
mW/mA
mA
mm
note : The above product specifications are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM) No.5863 1/3
DL-3147-141(-241)
Characteristics
AAAAAAAAA
A
AAAA
AAAAAA
A
AAAAAAAAA
A
A
A
AA
A
A
A
A
A
A
AAAAAAAAA
A
A
A
AA
A
A
A
A
A
A
A
A
A
AA
A
A
A
A
A
AAAAAAAAA
A
A
A
A
AA
A
A
A
A
A
AAAAAAAAA
AAAAAAAAA
A
A
A
A
AA
A
A
A
A
A
AAAAA
AAAAAAAAA
AAAAAA
25°C 50°C 60°C
5
4
3
2
1
0
100
50
0
Threshold current Ith (mA)
Output power Po (mW)
6
2
3
4
5
40
50
60
A
A
A
A
A
A
A
A
A
AAAAAAAAA
AAAAAAAAA
A
A
A
A
A
A
A
A
A
AAAAAAAAA
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
AAAAAAAAA
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
AAAAAAAAA
AAAAAAAAA
A
AAAAAAAA
0.8
Po=5mW
Tc=25°C
θ⊥
0.6
0.4
θ //
-40 -30 -20 -10
0
10
20
30
40
Angle θ (deg.)
Output power Po (mW)
AA AAAA A
AAAAAAAAA
A
A
A
A
A
A
A
AAAAAAAAA
A
A
A
A
A
A
A
A
A
A
A
A
A
A
AAAAAAAAA
A
A AAAA A
A
A
A
A
A
A
A
AAAAAAAAA
A
A AAAA A
30
0
0
1
20
0.2
0.1
0
10
1.0
Relative intensity
Monitor current Im (mA)
0.2
20
Beam divergence
0.5
0.3
40
Temperature Tc (°C)
Monitor current vs. Output power
0.4
60
0
Forward current IF (mA)
A
A
A
A
AAAAAAAAA
A
A
A
A
AAAAAAAAA
A
A
A
A
AAAA AAAA
AAAAAAAAA
AAAA AAAA
AAAAAAAAA
100
80
10
150
Tc=25°C
Vr(PD)=5V
AAA AAA A
AAAAAAAAA
AAAAAAAAA
A
A
A
A
A
A
A
AAAAAAAAA
A
A
A
A
A
A
A
A
A
A
A
A
A
A
AAAAAAAAA
AAA AAA A
AAAAAAAAA
A
A
A
A
A
A
A
AAAAAAAAA
A
AA AAA A
Threshold current vs. Temperature
Output power vs. Forward current
Output power vs. Lasing wavelength
Lasing wavelength vs. Temperature
Po=5mW
650
645
640
0
10
20
30
40
Temperature Tc (°C)
50
60
Tc=25°C
Po=5mW
Relative intensity
Lasing wavelength λp (nm)
655
Po=3mW
Po=1mW
639
641
643
645
647
Lasing wavelength λp (nm)
No.5863 2/3
649
DL-3147-141(-241)
CAUTION
1. No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster / crime-prevention equipment or
the like, and the failure of which may directly or indirectly cause injury, death or property loss.
2. Anyone purchasing any products described or contained herein for an above-mentioned use shall:
1) Accept full responsibility and indemnify and defend SANYO ELECTRIC CO.,LTD., it’s affiliates,
subsidiaries and distributors or any of their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, costs and expenses associated with such use.
2) Not impose any responsibility for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., it’s affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
3. Information (including circuit diagrams and circuit parameters) disclosed herein is for example only; it is not
guaranteed for mass production, SANYO believes the information disclosed herein is accurate and reliable,
but no guarantees are made or implied regarding it’s use or any infringements of intellectual property rights
or other rights of third parties.
Precautionary instructions in handling gallium arsenic products
Special precautions must be taken in handling this product because it contains, gallium arsenic, which is
designated as a toxic substance by law. Be sure to adhere strictly to all applicable laws and regulations
enacted for this substance, particularly when it comes to disposal.
Manufactured by ; Tottori SANYO Electric Co., Ltd.
Electronics Device Bussiness Headquaters LED Division
5-318, Tachikawa-cho, Tottori City, 680-8634 Japan
TEL: +81-857-21-2137 FAX: +81-857-21-2161
No.5863 3/3