HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER ■ ■ ■ ■ ■ ■ ■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS MEDIUM SPEED OPERATION tPD = 30ns (Typ.) AT 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4007UB is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4007UB type is comprised of three n-channel and three p-channel enhancement type MOS transistors. The transistor elements are accessible through the package terminals to DIP SOP ORDER CODES PACKAGE TUBE T&R DIP SOP HCF4007UBEY HCF4007UBM1 HCF4007UM013TR provide a convenient means for constructing the various typical circuits as shown in typical applications. More complex functions are possible using multiple packages. Number shown in parentheses indicate terminals that are connected together to form the various configuration listed. PIN CONNECTION September 2001 1/8 HCF4007UB INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 2, 11 SP2, SP3 13, 1 DP1, DP2 8, 5 DN1, DN2 4, 9 SN2, SN3 12 DN/P3 6, 3, 10 G1 to G3 LOGIC DIAGRAM NAME AND FUNCTION Source Connections to 2nd and 3rd p-channel transistors Drain Connections from the 1st and 2nd p-channel transistors Drain Connections from the 1st and 2nd n-channel transistors Source Connections to the 2nd and 3rd n-channel Common connection to the 3rd p-channel and n-channel transistor drains Gate connections to n-channel and p-channel of the three transistor pairs 7 VSS Negative Supply Voltage 14 VDD Positive Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Supply Voltage Value Unit -0.5 to +22 V VI DC Input Voltage -0.5 to VDD + 0.5 V II DC Input Current ± 10 mA 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C PD Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD 2/8 Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C HCF4007UB DC SPECIFICATIONS Test Condition Symbol IL VOH VOL VIH VIL IOH IOL II CI Parameter Quiescent Current High Level Output Voltage Low Level Output Voltage VI (V) Low Level Input Voltage Output Sink Current Input Leakage Current Input Capacitance |IO| VDD (µA) (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Input Voltage Output Drive Current VO (V) 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18 Value 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 Any Input Any Input 5 10 15 20 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 18 TA = 25°C Min. Typ. Max. 0.01 0.01 0.01 0.02 0.25 0.5 1 5 4.95 9.95 14.95 -40 to 85°C -55 to 125°C Min. Min. 7.5 15 30 150 4.95 9.95 14.95 0.05 0.05 0.05 4.95 9.95 14.95 4 8 12.5 1 2 2.5 -3.2 -1 -2.6 -6.8 1 2.6 6.8 ±0.1 5 7.5 0.05 0.05 0.05 1 2 2.5 V V 1 2 2.5 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 ±1 µA V 4 8 12.5 -1.15 -0.36 -0.9 -2.4 0.36 0.9 2.4 ±10-5 Max. 7.5 15 30 150 0.05 0.05 0.05 4 8 12.5 -1.36 -0.44 -1.1 -3.0 0.44 1.1 3.0 Max. Unit V mA mA ±1 µA pF The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) Test Condition Symbol Value (*) Unit Parameter VDD (V) tPLH tPHL Propagation Delay Time tTLH tTHL Transition Time 5 10 15 5 10 15 Min. Typ. Max. 55 30 25 100 50 40 110 60 50 200 100 80 ns ns (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. 3/8 HCF4007UB TYPICAL APPLICATIONS TRIPLE INVERTERS : (14, 2, 11); (8,13); (1, 5); (4, 7, 9) 3-INPUT NOR GATE : (13, 2); (1, 11); (12, 5, 8); (4, 7, 9) 3-INPUT NAND GATE : (1, 12, 13); (2, 14, 11); (4, 8); (5, 9) DUAL BIDIRECTIONAL TRASMISSION GATING : (1, 5, 12); (2, 9); (11, 4); (8,13,10); (6, 3) 4/8 HCF4007UB TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) 5/8 HCF4007UB Plastic DIP-14 MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 1.39 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 0.050 0.100 P001A 6/8 HCF4007UB SO-14 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.026 8° (max.) PO13G 7/8 HCF4007UB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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