74AC86 QUAD EXCLUSIVE OR GATE ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) 50Ω TRANSMISSION LINE DRIVING CAPABILITY SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 86 IMPROVED LATCH-UP IMMUNITY DESCRIPTION The 74AC86 is an advanced high-speed CMOS QUAD EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. DIP SOP TSSOP ORDER CODES PACKAGE TUBE DIP SOP TSSOP 74AC86B 74AC86M T&R 74AC86MTR 74AC86TTR All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS April 2001 1/9 74AC86 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 1A to 4A 1B to 4B 1Y to 4Y GND VCC 14 NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A B Y L L H H L H L H L H H L ABSOLUTE MAXIMUM RATINGS Symbol V CC Parameter Supply Voltage Value Unit -0.5 to +7 V -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 V DC Input Diode Current ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current VI DC Input Voltage VO DC Output Voltage IIK ICC or IGND DC VCC or Ground Current Storage Temperature Tstg TL Lead Temperature (10 sec) V ± 50 mA ± 200 mA -65 to +150 °C 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. RECOMMENDED OPERATING CONDITIONS Symbol V CC Parameter Supply Voltage VI Input Voltage VO Output Voltage Top Operating Temperature dt/dv Input Rise and Fall Time VCC = 3.0, 4.5 or 5.5V (note 1) 1) VIN from 30% to 70% of VCC 2/9 Value Unit 2 to 6 V 0 to VCC V 0 to VCC V -55 to 125 °C 8 ns/V 74AC86 DC SPECIFICATIONS Test Condition Symbol VIH V IL VOH VOL II ICC IOLD IOHD Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Dynamic Output Current (note 1, 2) Value TA = 25°C VCC (V) 3.0 4.5 5.5 3.0 4.5 5.5 VO = 0.1 V or VCC-0.1V Min. Typ. 2.1 3.15 3.85 1.5 2.25 2.75 1.5 2.25 2.75 VO = 0.1 V or VCC-0.1V Max. -40 to 85°C -55 to 125°C Min. Min. Max. 2.1 3.15 3.85 0.9 1.35 1.65 Max. 2.1 3.15 3.85 0.9 1.35 1.65 V 0.9 1.35 1.65 3.0 IO=-50 µA 2.9 2.99 2.9 2.9 4.5 IO=-50 µA 4.4 4.49 4.4 4.4 5.49 Unit V 5.5 IO=-50 µA 5.4 5.4 5.4 3.0 IO =-12 mA 2.56 2.46 2.4 4.5 IO =-24 mA 3.86 3.76 3.7 5.5 IO =-24 mA 4.86 4.76 4.7 3.0 IO=50 µA 0.002 0.1 0.1 0.1 4.5 IO=50 µA 0.001 0.1 0.1 0.1 5.5 IO=50 µA 0.001 0.1 0.1 0.1 3.0 IO =12 mA 0.36 0.44 0.5 4.5 IO =24 mA 0.36 0.44 0.5 5.5 IO =24 mA 0.36 0.44 0.5 5.5 VI = VCC or GND ± 0.1 ±1 ±1 µA 5.5 VI = VCC or GND 2 20 40 µA VOLD = 1.65 V max 75 50 mA VOHD = 3.85 V min -75 -50 mA 5.5 V V 1) Maximum test duration 2ms, one output loaded at time 2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50Ω AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf = 3ns) Test Condition Symbol Parameter tPLH tPHL Propagation Delay Time VCC (V) Value TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. 3.3 (*) 2.0 5.5 11.5 1.0 12.5 1.0 14.0 (**) 1.5 4.0 8.5 1.0 9.5 1.0 10.0 5.0 Unit ns (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V 3/9 74AC86 CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter TA = 25°C VCC (V) CIN Input Capacitance 5.0 C PD Power Dissipation Capacitance (note 1) 5.0 Value Min. fIN = 10MHz Typ. Max. -40 to 85°C -55 to 125°C Min. Min. Max. Unit Max. 4 pF 34 pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per Gate) TEST CIRCUIT C L = 50pF or equivalent (includes jig and probe capacitance) R L = R1 = 500Ω or equivalent R T = ZOUT of pulse generator (typically 50Ω) 4/9 74AC86 WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 5/9 74AC86 Plastic DIP-14 MECHANICAL DATA mm DIM. MIN. a1 0.51 B 1.39 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 0.050 0.100 P001A 6/9 74AC86 SO-14 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.2 a2 MAX. 0.068 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 4.0 0.149 0.68 0.157 0.026 8 (max.) P013G 7/9 74AC86 TSSOP14 MECHANICAL DATA mm DIM. MIN. inch TYP. A MAX. MIN. MAX. 1.1 0.433 A1 0.05 0.10 0.15 0.002 0.004 0.006 A2 0.85 0.9 0.95 0.335 0.354 0.374 b 0.19 0.30 0.0075 0.0118 c 0.09 0.20 0.0035 0.0079 D 4.9 5 5.1 0.193 0.197 0.201 E 6.25 6.4 6.5 0.246 0.252 0.256 E1 4.3 4.4 4.48 0.169 0.173 0.176 e 0.65 BSC 0.0256 BSC K 0o 4o 8o 0o 4o 8o L 0.50 0.60 0.70 0.020 0.024 0.028 A A2 A1 b e K c E1 PIN 1 IDENTIFICATION 1 L E D 8/9 TYP. 74AC86 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringe ment of patents or other righ ts of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this pub lication are subject to change without notice. Thi s pub lication supersedes and replaces all information previously supplied. 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