INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 June 2002. MIL-PRF-19500/395G 6 March 2002 SUPERSEDING MIL-PRF-19500/395F 26 February 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N3735, 2N3735L, 2N3737 AND 2N3737UB, JAN, JANTX, JANTXV, JANS AND JANHC, JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices . 1.2 Physical dimensions. See figure 1 (TO-39, TO-5 and TO-46), figure 2 (2N3737UB) and figure 3 (JANHC and JANKC). 1.3 Maximum ratings. Type PT PT VCBO VCEO TA = +25°C TC =+25°C W W V dc V dc 2N3735 1.0 (1) 2.9 (2) 75 40 2N3737 0.5 (3) 1.9 (4) 75 40 2N3737UB 0.5 (5) 75 40 (1) Derate linearly at 5.71 mW/°C above TA = +25°C. (2) Derate linearly at 16.6 mW/°C above TC = +25°C. (3) Derate linearly at 2.86 mW/°C above TA = +25°C. (4) Derate linearly at 11.3 mW/°C above TC = +25°C. (5) Derate linearly at 3.07 mW/°C above TA = +37.5°C. VEBO IC RθJC RθJA V dc A dc 1.5 1.5 1.5 °C/mW .060 .088 - °C/W 175 350 325 5 5 5 TJ and TSTG °C -65 to +200 -65 to +200 -65 to +200 1.4 Primary electrical characteristics. Limits hFE3 (1) VCE = 1.0 V dc IC = 0.5 A dc Min 40 Max 140 (1) Pulsed (see 4.5.1) |hfe| VCE = 10 V dc IC = 50 mA dc f = 100 MHz 2.5 6.0 VCE(sat) IC = 500 mA dc IB = 50 mA dc td tr toff V dc Cobo VCB = 10 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz pF ns ns ns 0.5 9 8.0 40 60 Pulse response Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/395G FIGURE 1. Physical dimensions TO-39, TO-5, TO-46. 2 MIL-PRF-19500/395G 2N3735 DIMENSIONS, TO-39 Symbol CD CH HD LC LD LL LU L1 L2 P TL TW Q r α Dimensions Inches Millimeters Min Max Min Max .305 .355 7.75 9.02 .240 .260 6.10 6.60 .355 .370 9.02 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .040 1.02 .010 0.25 45°TP 45°TP Notes 6 7 7 7 7 7 3 9 4 10 6 2N3735L DIMENSIONS, TO-5 Symbol CD CH HD LC LD LL LU L1 L2 P TL TW Q r α Dimensions Inches Millimeters Min Max Min Max .305 .355 7.75 9.02 .240 .260 6.10 6.60 .355 .370 9.02 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 1.500 1.750 38.10 44.45 .016 .019 0.41 0.48 .050 1.27 .250 6.35 7 .100 2.54 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .040 1.02 .010 0.25 45°TP 45°TP Notes 6 7 7 7 7 3 9 4 10 6 FIGURE 1. Physical dimensions (TO-39, TO-5, TO-46) – Continued. 3 MIL-PRF-19500/395G 2N3737 DIMENSIONS, TO-46 Symbol CD CH HD LC LD LL LU L1 L2 TL TW Q r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .065 .085 1.65 2.16 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 1.750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .040 1.02 .007 .018 45°TP 45°TP Notes 6 7 7 7 7 7 3 9 4 10 6 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. 2. Metric equivalents are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Symbol CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge. 7. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 8. Lead number three is electrically connected to case. 9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 10. Symbol r applied to both inside corners of tab. 11. In accordance with ANSI Y14.5 M, diameters are equivalent to φX symbology. 12. P dimension not applicable for the TO-46 case. FIGURE 1. Physical dimensions (TO-39, TO-5, TO-46) – Continued. 4 MIL-PRF-19500/395G UB Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Inches Min .046 .017 .016 .016 .016 .085 .071 .035 .085 .115 .022 .022 Dimensions Millimeters Max Min Max .056 0.97 1.42 .035 0.43 0.89 .024 0.41 0.61 .024 0.41 0.61 .024 0.41 0.61 .108 2.41 2.74 .079 1.81 2.01 .039 0.89 0.99 .108 2.41 2.74 .128 2.82 3.25 .128 3.25 .038 0.56 0.96 .038 0.56 0.96 Note NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions, surface mount (UB version). 5 MIL-PRF-19500/395G B E Die size: Die thickness: Base pad: Emitter pad: Back metal: Top metal: Back side: Glassivation: .027 x .027 inch (0.6858 x 0.6858 mm). .008 ±.0016 inch (0.2032 ±0.04064 mm). .0045 x .0045 inch (0.1145 x 0.1145 mm). .004 x .005 inch (0.1016 x 0.1270 mm). Gold, 6500 ± 1950 Ang. Aluminum, 24500 ± 2500 Ang. Collector. SiO2, 7500 ± 1500 Ang. FIGURE 3. JANHC and JANKC (A-version) die dimensions. 6 MIL-PRF-19500/395G 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-39, TO-5 and TO-46) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 7 MIL-PRF-19500/395G 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I. 3.6 Electrical test requirements. The electrical test requirements shall be group A as specified herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N" prefix and the "UB" suffix can also be omitted. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. *4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. *4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3c Thermal impedance, method 3131 of MIL-STD-750. Thermal impedance, method 3131 of MIL-STD-750. 9 ICBO2 and hFE3 Not applicable 11 ICBO2; hFE3; ∆ICBO2 = 100 percent or 25 nA dc, whichever is greater; ∆hFE3 = ±15 percent of initial value. ICBO2 and hFE3 12 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ∆ICBO2 = 100 percent or 25 nA dc, whichever is greater; ∆hFE3 = ±15 percent of initial value. Subgroup 2 of table I herein; ∆ICBO2 = 100 percent or 25 nA dc, whichever is greater; ∆hFE3 = ±15 percent of initial value. 8 MIL-PRF-19500/395G 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Adjust the power dissipated to achieve TJ = 135°C minimum. The minimum power dissipated shall be 75 percent of the maximum rated as defined in 1.3. VCB = 10 - 30 V dc. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (endpoints) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein; delta requirements only apply to subgroups B4 and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and table III herein. * 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 2037 Test condition A. B4 1037 VCB = 10 - 30 V dc. B5 1027 (Note: If a failure occurs, resubmission shall be at the test conditions of the original sample). VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). Option 1: 96 hours minimum, sample size in accordance with table VIa of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum. Option 2: 216 hours., sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225°C minimum. B6 3131 See 4.5.2. 9 MIL-PRF-19500/395G 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Condition 1 1039 Steady-state life: Test condition B, 340 hours min., VCB = 10 - 30 V dc, power shall be applied to achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hrs for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANJ, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein; delta requirements only apply to subgroup C6. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E (not applicable to 2N3737UB). C6 1026 VCB = 10 - 30 V dc; 1,000 hours; power shall be applied to achieve TJ = +150°C minimum, using a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. * 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E (not applicable to 2N3737UB). C5 3131 See 4.5.2. C6 Not applicable. 10 MIL-PRF-19500/395G 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or requalification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed to maintain qualification. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be 45 mA dc minimum for 2N3735 and 2N3735L and 31 mA dc minimum for 2N3737. b. Collector to emitter voltage magnitude shall be 20 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be 25°C. e. Mounting arrangement shall be with heat sink to case. f. Thermal resistance maximum limit of 60°C/W for 2N3735, 2N3735L, and 88°C/W for 2N3737 and 2N3737UB. 11 MIL-PRF-19500/395G TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 1 2/ Visual and mechanical examination 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ 1071 n = 22 devices, c = 0 Fine leak Gross leak Electrical measurements 4/ Bond strength 3/ 4/ Group A, subgroup 2 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs n = 11 wires, c = 0 Breakdown voltage collector to emitter 3011 Bias condition D; IC = 10 mA dc, pulsed (see 4.5.1) V(BR)CEO Collector to base cutoff current 3036 Bias condition D; V(BR)CBO = 75 V dc. ICBO1 10 µA dc Emitter to base cutoff current 3061 Bias condition D; V(BR)EBO = 5 V dc. IEBO1 10 µA dc Collector to base cutoff current 3036 Bias condition D; VCB = 30 V dc ICBO2 250 nA dc Collector to emitter cutoff current 3041 Bias condition A; VCE = 30 V dc VEB = 2.0 V dc ICEX1 200 nA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 4.0 V dc IEBO2 100 nA dc Subgroup 2 See footnotes at end of table. 12 40 V dc MIL-PRF-19500/395G TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Method Symbol Conditions Limit Min Unit Max Subgroup 2 - continued Forward current transfer ratio 3076 VCE = 1.0 V dc; IC = 10 mA dc hFE1 35 Forward current transfer ratio 3076 VCE = 1.0 V dc; IC = 150 mA dc, pulsed (see 4.5.1) hFE2 40 Forward current transfer ratio 3076 VCE = 1.0 V dc; IC = 500 mA dc, pulsed (see 4.5.1) hFE3 40 140 Forward current transfer ratio 3076 VCE = 1.5 V dc; IC = 1.0 A dc, pulsed (see 4.5.1) hFE4 20 80 Collector to emitter voltage (saturated) 3071 IC = 10 mA dc, IB = 1.0 mA dc VCE(sat)1 0.2 V dc Collector to emitter voltage (saturated) 3071 IC = 150 mA dc, IB = 15 mA dc, pulsed (see 4.5.1) VCE(sat)2 0.3 V dc Forward current transfer ratio 3076 VCE = 5.0 V dc; IC = 1.5 A dc, pulsed (see 4.5.1) hFE5 Collector to emitter voltage (saturated) 3071 IC = 500 mA dc, IB = 50 mA dc, pulsed (see 4.5.1) VCE(sat)3 0.5 V dc Collector to emitter voltage (saturated) 3071 IC = 1.0 A dc, IB = 100 mA dc, pulsed (see 4.5.1) VCE(sat)4 0.9 V dc Base to emitter saturated voltage 3066 Test condition A, IC = 10 mA dc, IB = 1.0 mA dc VBE(sat)1 0.8 V dc Base to emitter saturated voltage 3066 Test condition A, IC = 150 mA dc, IB = 15 mA dc, pulsed (see 4.5.1) VBE(sat)2 1.0 V dc Base to emitter saturated voltage 3066 Test condition A, IC = 500 mA dc, IB = 50 mA dc, pulsed (see 4.5.1) VBE(sat)3 1.2 V dc Base to emitter saturated voltage 3066 Test condition A, IC = 1.0 A dc, IB = 100 mA dc, pulsed (see 4.5.1) VBE(sat)4 1.4 V dc See footnotes at end of table. 13 " V dc 20 0.9 MIL-PRF-19500/395G TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 3 High-temperature operation: Collector to emitter cutoff current TA = +150°C 3041 Low-temperature operation: Forward current transfer ratio Bias condition A; VCE = 30 V dc, VEB = 2.0 V dc 250 ICEX2 µA dc TA = -55°C 3076 VCE = 1.0 V dc; IC = 500 mA dc, pulsed (see 4.5.1) hFE6 15 Magnitude of common emitter small-signal shortcircuit forward current transfer ratio 3306 VCE = 10 V dc; IC = 50 mA dc; f = 100 MHz |hfe| 2.5 Open circuit output capacitance 3236 VCB = 10 V dc, IE = 0, 100 kHz ≤ f ≤ 1 MHz Cobo 9.0 pF Input capacitance (output open - circuited) 3240 VEB = 0.5 V dc, IC = 0, 100 kHz ≤ f ≤ 1 MHz Cibo 80 pF Delay response 3251 Test condition A; VCC = 30 V dc, VBE = 2 V dc, IC = 1.0 A dc, IB1 = 100 mA dc, (see figure 4) td 8.0 ns Rise time 3251 Test condition A; VCC = 30 V dc, VBE = 2 V dc, IC = 1.0 A dc, IB1 = 100 mA dc, (see figure 4) tr 40 ns Turn-off time 3251 Test condition A; VCC = 30 V dc, IC = 1.0 A dc, IB1 = -IB2 = 100 mA dc, (see figure 5) toff 60 ns Subgroup 4 6.0 Pulse response: Subgroups 5, 6 and 7 Not applicable 1/ For sampling plan, unless otherwise specified see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 14 MIL-PRF-19500/395G TABLE II. Group E inspection (all quality levels) – for qualification only. * Inspection MIL-STD-750 Method Conditions Subgroup 1 Temperature cycling (air to air) Qualification 45 devices c=0 1051 Test condition C, 500 cycles Hermetic seal Fine leak Gross leak 1071 Electrical measurements See group A, subgroup 2 herein. Subgroup 2 Intermittent life 45 devices c=0 1037 Electrical measurements VCB = 10 V dc, 6,000 cycles. See group A, subgroup 2 herein. Subgroup 3 Not applicable Subgroup 4, 5, 6 and 7 Not applicable Subgroup 8 Reverse stability 1033 Condition A for devices ≥ 400 V Condition B for devices < 400 V 15 45 devices c=0 MIL-PRF-19500/395G TABLE III. Groups B and C delta measurements. 1/ 2/ 3/ Step Inspection MIL-STD-750 Method Symbol Conditions Limits Min Unit Max 1. Collector to base cutoff current 3036 Bias condition D, VCB = 30 V dc ∆ICBO2 100 percent of initial value or 25 nA dc whichever is greater. 2. Forward-current transfer ratio 3076 VCE = 1 V dc, IC = 500 mA dc, pulsed (see 4.5.1) ∆hFE3 ± 25 percent change from initial value. 3. Collector to emitter voltage (saturated) 3071 IC = 500 mA dc, IB = 50 mA dc, pulsed (4.5.1 ) ∆VCE(SAT)3 ± 50 mV dc change from previous measured value. 1/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 4, see table III herein, step 3. b. Subgroup 5, see table III herein, step 3. 2/ The delta measurements for 4.4.2.2 (JAN, JANTX, JANTXV) are as follows: See table III herein, steps 1 and 2, all subgroups. 3/ The delta measurements for table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table III herein, steps 1 and 2 for (JANS). 16 MIL-PRF-19500/395G NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 0.1 ns, duty cycle ≤ 2 percent, and the generator source impedance shall be 50 Ω. 2. Sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ 12 pF, rise time ≤ 5 ns. FIGURE 4. Test circuit and waveforms for measuring turn-on. NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 0.1 ns, duty cycle ≤ 2 percent, and the generator source impedance shall be 50 Ω. 2. Sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ 12 pF, rise time ≤ 5 ns. FIGURE 5. Test circuit and waveforms for measuring turn-off. 17 MIL-PRF-19500/395G 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DODISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. The lead finish as specified (see 3.4.1). d. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N3737) will be identified on the QPL. Die ordering information PIN Manufacturer 34156 2N3737 JANHCA2N3737 JANKCA2N3737 6.5 Changes from previous issue. The margins of this specification are marked with an asterisk to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. 18 MIL-PRF-19500/395G Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC Review activities: Army - AR, AV, MI, SM Navy - AS, MC Air Force – 19, 71, 99 (Project 5961-2558) 19 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/395G 2. DOCUMENT DATE 6 March 2002 2. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N3735, 2N3735L, 2N3737 AND 2N3737UB, JAN, JANTX, JANTXV, JANS AND JANHC, JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99