AD OP250

a
CMOS Single-Supply Rail-to-Rail
Input/Output Operational Amplifier
OP150/OP250/OP450
FEATURES
Single-Supply Operation: 2.7 V to 6 V
High Output Current: 6250 mA
Low Supply Current: 600 mA/Amp
Wide Bandwidth: 4 MHz
Slew Rate: 6.5 V/ms
No Phase Reversal
Low Input Currents
Unity Gain Stable
OBS
APPLICATIONS
Battery Powered Instrumentation
Multi Media Audio
Medical
Remote Sensors
ASIC Input or Output Amplifier
Automotive
Headphone Driver
GENERAL DESCRIPTION
PIN CONFIGURATIONS
8-Lead Narrow-Body SO
(S Suffix)
NC
NC
–IN
V+
+IN
OP150
5-Lead SOT23-5
(RT Suffix)
OUT
V–
+IN
OUT
OP150
8 Lead Epoxy DIP
(P Suffix)
8-Lead Narrow-Body SO
(S Suffix)
OLE
The OP150, OP250 and OP450 are single, dual and quad
CMOS single-supply, 4 MHz bandwidth amplifiers featuring
rail-to-rail inputs and outputs. All are guaranteed to operate from
a 3 volt single supply as well as a +5 volt supply.
The OP150 family of amplifiers have very low input bias currents. The outputs are capable of driving 250 mA loads and are
stable with capacitive loads as high as 500 pF.
Applications for these amplifiers include portable medical
equipment, safety and security, and interface for transducers
with high output impedances.
Supply current is only 600 µA per amplifier.
The ability to swing rail-to-rail at both the input and output enables designers to build multistage filters in single-supply systems and maintain high signal-to-noise ratios.
The OP150/OP250/OP450 are specified over the extended industrial (-40°C to +125°C) temperature range. The OP150
single amplifiers are available in 8-pin SO surface mount and
the 5-pin SOT23-5 packages. The OP250 dual is available in 8pin plastic DIPs and SO surface mount packages. The OP450
quad is available in 14-pin DIPs, TSSOP and narrow 14-pin SO
packages. Consult factory for TSSOP availability.
V+
OUT A
+IN A
OUT B
OP250
–IN B
+IN B
V–
14-Lead Epoxy DIP
(P Suffix)
1
8
V+
–IN A
2
7
OUT B
+IN A
3
6
–IN B
V–
4
5
+IN B
TE
14-Lead SO
(S Suffix)
1
14 OUT D
–IN A
2
13 –IN D
–IN A
+IN A
3
12 +IN D
+IN A
+IN B
4
5
–IN B
6
OUT B
7
OP450
V+
+IN B
10 +IN C
–IN B
–IN C
OUT B
8
OUT D
OUT A
11 V–
9
OP250
OUT A
OUT A
V+
–IN
NC
V–
–IN A
V+
–IN D
OP450
+IN D
V–
+IN C
–IN C
OUT C
OUT C
14-Lead
TSSOP
(RU Suffix)
OP450
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
REV. 0
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
PRELIMINARY TECHNICAL DATA
OP150/OP250/OP450–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
INPUT CHARACTERISTICS
Offset Voltage OP150
VOS
Offset Voltage OP250/OP450
VOS
Input Bias Current
IB
Input Offset Current
IOS
Input Voltage Range
Common-Mode Rejection Ratio
CMRR
Large Signal Voltage Gain
AVO
Large Signal Voltage Gain
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
AVO
AVO
∆VOS/∆T
∆IB/∆T
∆IOS/∆T
(@ VS = +3.0 V, VCM = 0.05 V, VO = 1.4 V, TA = +258C, unless otherwise noted)
Conditions
Output Voltage Low
Output Current
Open Loop Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
VOH
VOL
10
–40°C ≤ TA ≤ +125°C
0
60
PSRR
ISY
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Gain Bandwidth Product
Phase Margin
Channel Separation
SR
tS
GBP
Øo
CS
RL =10 kΩ
To 0.01%
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
0.1 Hz to 10 Hz
f = 1 kHz
mV
mV
mV
mV
pA
pA
pA
pA
V
dB
dB
V/mV
V/mV
V/mV
V/mV
µV/°C
pA/°C
pA/°C
60
40
2.95
16
10
TE
2.99
2.95
2
10
30
55
± 250
–40°C to +125°C
f = 1 MHz, AV = 1
VS = 2.7 V to 6 V
–40°C ≤ TA ≤ +125°C
VO = 0 V
–40°C ≤ TA ≤ +125°C
5
3
OLE
IL = 100 µA
–40°C to +125°C
IL = 10 mA
–40°C to +125°C
IL = 100 µA
–40°C to +125°C
IL = 10 mA
–40°C to +125°C
Units
25
–40°C ≤ TA ≤ +125°C
VCM = 0 V to 3 V
–40°C ≤ TA ≤ +125°C
RL = 10 kΩ, VO = 0.3 V to 2.7 V
–40°C ≤ TA ≤ +125°C
RL = 2 kΩ, VO = 0.3 V to 2.7 V
RL = 1 kΩ, VO = 0.3 V to 2.7 V
Max
5
–40°C ≤ TA ≤ +125°C
IOUT
ZOUT
Typ
–40°C ≤ TA ≤ +125°C
OBS
OUTPUT CHARACTERISTICS
Output Voltage High
Min
70
68
500
650
2.7
2
75
f = 1 kHz, RL =10 kΩ
55
600
V
V
V
V
mV
mV
mV
mV
mA
mA
Ω
dB
dB
µA
µA
V/µs
µs
MHz
Degrees
dB
µV p-p
nV/√Hz
pA/√Hz
Specifications subject to change without notice.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
PRELIMINARY TECHNICAL DATA
–2–
REV. 0
OP150/OP250/OP450
ELECTRICAL CHARACTERISTICS (@ V = +5.0 V, V
S
Parameter
Symbol
INPUT CHARACTERISTICS
Offset Voltage OP150
VOS
Offset Voltage OP250/OP450
VOS
Input Bias Current
IB
Input Offset Current
IOS
OBS
Large Signal Voltage Gain
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
AVO
AVO
∆VOS/∆T
∆IB/∆T
∆IOS/∆T
Output Current
Open Loop Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
30
0.1
VCM = 0 V to 5 V
–40°C ≤ TA ≤ +125°C
RL = 10 kΩ, VO = 0.3 V to 4.7 V
–40°C ≤ TA ≤ +125°C
RL = 2 kΩ, VO = 0.3 V to 2.7 V
RL = 1 kΩ, VO = 0.3 V to 2.7 V
–40°C ≤ TA ≤ +125°C
0
60
PSRR
ISY
Max
Units
5
mV
mV
mV
mV
pA
pA
pA
pA
V
dB
dB
V/mV
V/mV
V/mV
V/mV
µV/°C
pA/°C
pA/°C
50
60
8
16
5
40
OLE
16
10
1.5
100
20
TE
IL = 100 µA
–40°C to +125°C
IL = 10 mA
–40°C to +125°C
IL = 100 µA
–40°C to +125°C
IL = 10 mA
–40°C to +125°C
4.99
V
V
V
V
mV
mV
mV
mV
mA
mA
Ω
4.95
2
30
± 250
IOUT
ZOUT
Typ
5
–40°C ≤ TA ≤ +125°C
AVO
VOL
Min
–40°C ≤ TA ≤ +125°C
Large Signal Voltage Gain
Output Voltage Low
Conditions
–40°C ≤ TA ≤ +125°C
CMRR
VOH
= 0.05 V, VO = 1.4 V, TA = +258C, unless otherwise noted)
–40°C ≤ TA ≤ +125°C
Input Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
Output Voltage High
CM
–40°C to +125°C
f = 1 MHz, AV = 1
VS = 2.7 V to 6 V
–40°C ≤ TA ≤ +125°C
VO = 0 V
–40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Full Power Bandwidth
Settling Time
Gain Bandwidth Product
Phase Margin
Channel Separation
SR
BWp
tS
GBP
Øo
CS
RL =10 kΩ
1% Distortion
To 0.01%
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Voltage Noise Density
Current Noise Density
en p-p
en
en
in
0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
75
70
550
6.5
4
75
f = 1 kHz, RL =10 kΩ
55
35
650
dB
dB
µA
µA
V/µs
kHz
µs
MHz
Degrees
dB
µV p-p
nV/√Hz
nV/√Hz
pA/√Hz
Specifications subject to change without notice.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
REV. 0
–3–
PRELIMINARY TECHNICAL DATA
OP150/OP250/OP450
WAFER TEST LIMITS
(@ VS = +5.0 V, VCM = 0 V, TA = +258C unless otherwise noted.)
Parameter
Symbol
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage High
Output Voltage Low
Supply Current/Amplifier
VOS
IB
IOS
VCM
CMRR
PSRR
AVO
VOH
VOL
ISY
Conditions
VCM = 0 V to 10 V
V = +2.7 V to +7 V
RL = 10 kΩ
RL = 2 kΩ to GND
RL = 2 kΩ to V+
VO = 0 V, RL = ∞
OBS
Limit
Units
± 10
50
10
V– to V+
60
70
mV max
pA max
pA max
V min
dB min
dB min
V/mV min
V min
mV max
µA max
2.9
55
650
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
OLE
ABSOLUTE MAXIMUM RATINGS 1
ORDERING GUIDE
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Output Short-Circuit Duration to GND2 . . . . . . . . . Indefinite
Storage Temperature Range
P, S, RT, RU Package . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP150/OP250/OP450G . . . . . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
P, S, RT, RU Package . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C
Package Type
θJA3
θJC
Units
5-Pin SOT (RT)
8-Pin Plastic DIP (P)
8-Pin SOIC (S)
8-Pin TSSOP (RU)
14-Pin Plastic DIP (P)
14-Pin SOIC (S)
14-Pin TSSOP( RU)
325
103
158
240
76
120
180
43
43
43
33
36
35
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Model
Temperature
Range
OP150GS
OP150GRT
OP150GBC
OP250GP
OP250GS
OP250GRU
OP250GBC
OP450GP
OP450GS
OP450GRU
OP450GBC
–40°C to +125°C
–40°C to +125°C
+25°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
+25°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
+25°C
Package Option
TE
8-Pin SOIC
5-Pin SOT
DICE
8-Pin Plastic DIP
8-Pin SOIC
8-Pin TSSOP
DICE
14-Pin Plastic DIP
14-Pin SOIC
14-Pin TSSOP
DICE
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
θJA is specified for the worst case conditions, i.e., θJA is specified for device in
socket for P-DIP packages; θJA is specified for device soldered in circuit board
for SOIC package.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP150/OP250/OP450 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, p roper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
PRELIMINARY TECHNICAL DATA
–4–
REV. 0
OP150/OP250/OP450
DICE CHARACTERISTICS
OP150 Die Size 0.00 × 0.00 Inch, 00 Sq. Mils
Substrate (Die Backside) Is Connected to V–
Transistor Count, 00.
OP250 Die Size 0.044 × 0.045 Inch, 1,980 Sq. Mils
Substrate (Die Backside) Is Connected to V–
Transistor Count, 0.
OP450 Die Size 0.052 × 0.058 Inch, 3,016 Sq. Mils
Substrate (Die Backside) Is Connected to V–
Transistor Count, 127.
2.5
VOL
VOH
OBS
VOUT – ±V
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100 120
R LOAD – Ω
140
Figure 1. ± VOUT vs. RLOAD
OLE
160
180
TE
200
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
REV. 0
–5–
PRELIMINARY TECHNICAL DATA